Exemplary methods, apparatuses, and systems include receiving a plurality of read operations. The read operations are divided into a current set of a sequence of read operations and one or more other sets. The size of the current set is a first number of read operations. An aggressor read operation is selected from the current set. A data integrity scan is performed on a victim of the aggressor and a first indicator of data integrity is determined based on the first data integrity scan. A size of a subsequent set of read operations is set to a second number, which less than the first number, based on the indicator of data integrity.

Exemplary methods, apparatuses, and systems include receiving a plurality of read operations. The read operations are divided into a current set of a sequence of read operations and one or more other sets. The size of the current set is a first number of read operations. An aggressor read operation is selected from the current set. A data integrity scan is performed on a victim of the aggressor and a first indicator of data integrity is determined based on the first data integrity scan. A size of a subsequent set of read operations is set to a second number, which less than the first number, based on the indicator of data integrity.

A memory is provided in which a scan chain covers the redundancy logic for column redundancy as well as the redundancy multiplexers in each column. The redundancy logic includes a plurality of redundancy logic circuits arranged in series. Each redundancy logic circuit corresponds to a respective column in the memory. Each column is configured to route a shift-in signal through its redundancy multiplexers during a scan mode of operation.

A method of using on-chip circuitry to test a memory of a chip is provided. The method including, in a capture stage, receiving, at a first n-bit compression structure including n first stage latches corresponding to each bit of the first n-bit compression structure, a value at each respective first stage latch for each of n memory addresses of the memory, such that each respective first stage latch receives a respective value from a memory address of the memory, n being an integer greater than one, and in the capture stage, passing the values from each respective first stage latch through compression logic of the first n-bit compression structure to output a single compressed address value, providing the single compressed address value to a second stage latch of the first n-bit compression structure.

Exemplary methods, apparatuses, and systems include receiving a plurality of read operations. The read operations are divided into a current set of a sequence of read operations and one or more other sets. The size of the current set is a first number of read operations. An aggressor read operation is selected from the current set. A first data integrity scan is performed on a victim of the aggressor and a first indicator of data integrity is determined based on the first data integrity scan. In response to determining the first indicator of data integrity is greater than a current maximum value, the current maximum value is set to the first indicator of data integrity. In response to determining the current maximum value satisfies a threshold value, a size of a subsequent set of read operations is set to a second number, which less than the first number.

Exemplary methods, apparatuses, and systems include receiving a plurality of read operations. The read operations are divided into a current set of a sequence of read operations and one or more other sets. The size of the current set is a first number of read operations. An aggressor read operation is selected from the current set. A first data integrity scan is performed on a victim of the aggressor and a first indicator of data integrity is determined based on the first data integrity scan. In response to determining the first indicator of data integrity is greater than a current maximum value, the current maximum value is set to the first indicator of data integrity. In response to determining the current maximum value satisfies a threshold value, a size of a subsequent set of read operations is set to a second number, which less than the first number.

In described examples, circuitry for saving and restoring a design block state includes first memories configured to receive, and store in different first memories in a first order, different portions of first data; and a second memory coupled to first memories. First memories with the most memory cells have N memory cells. First memories with fewer memory cells have M memory cells. When saving state, first data from different first memories is written in a second order to different corresponding regions of the second memory as second data. The second order repeats portions of the first data stored in sequentially first N mod M cells, determined using the first order, of corresponding first memories with fewer cells. When restoring state, second data is read from the second memory and stored, in the first order, in corresponding first memories; repeated portions are repeatedly stored in corresponding first memories with fewer cells.

A memory system includes a memory device and a processing device, operatively coupled to the memory device. The processing device performs operations comprising: identifying one or more mandatory scan wordlines of the memory device and one or more remaining wordlines of the memory device; performing a plurality of scan iterations with respect to a plurality of pages of the memory device, such that performing each scan iteration comprises: identifying, among the remaining wordlines, one or more scheduled scan wordlines of the memory device, scanning a subset of pages of the memory device that are addressable by the mandatory scan wordlines and the scheduled scan wordlines; wherein a combination of a first plurality of pages addressable by the scheduled scan wordlines selected by the plurality of scan iterations and a second plurality of pages addressable by the mandatory wordlines comprises the plurality of pages of the memory device.

A system-on-chip is provided that includes functional circuitry that performs a function. Control circuitry controls the function based one or more configuration parameters. Non-volatile storage circuitry includes a plurality of non-volatile storage cells each being adapted to write at least a bit of the one or more configuration parameters in a rewritable, persistent manner a plurality of times. Read circuitry locally accesses the non-volatile storage circuitry, obtains the one or more configuration parameters from the non-volatile storage circuitry and provides the one or more configuration parameters to the control circuitry. Write circuitry obtains the one or more configuration parameters and provides the one or more configuration parameters to the non-volatile storage circuitry by locally accessing the non-volatile storage circuitry.

An apparatus of a multi-chip package (MCP) of a functional safety system, comprises a processor to be configured as a master chip in a master-slave arrangement with a slave chip in the MCP, and a memory coupled to the processor to store one or more infield test scan patterns. The processor includes a bock to couple the master chip to the slave chip via a high-speed input/output (IO) interface to retrieve the one or more infield test scan patterns from the memory via the master chip, and to provide the one or more infield test scan patterns to the slave chip via the high-speed IO interface in response to the functional safety system entering an infield test mode.