A test circuit includes a BIST clock generator and a functional clock generator. A first multiplexer selectively passes the BIST clock or the functional clock as a selected clock in response to a clock selection signal. BIST logic operates based upon the BIST clock. Functional logic operating based upon the functional clock signal. A memory operates based upon the selected clock. When the test circuit is operating in BIST mode, a clock selection circuit receives and passes a BIST signal as the clock selection signal. When the test circuit is operating in a shift phase of a scan test mode, it generates the clock selection signal as asserted, and when the test circuit is operating in the capture phase of the scan test mode, it generates the clock signal as equal to a last bit received from a scan chain.

A test circuit includes a BIST clock generator and a functional clock generator. A first multiplexer selectively passes the BIST clock or the functional clock as a selected clock in response to a clock selection signal. BIST logic operates based upon the BIST clock. Functional logic operating based upon the functional clock signal. A memory operates based upon the selected clock. When the test circuit is operating in BIST mode, a clock selection circuit receives and passes a BIST signal as the clock selection signal. When the test circuit is operating in a shift phase of a scan test mode, it generates the clock selection signal as asserted, and when the test circuit is operating in the capture phase of the scan test mode, it generates the clock signal as equal to a last bit received from a scan chain.

Digital testing is performed on an integrated circuit while radiation upsets are induced at locations of the integrated circuit. For each digital test, a determination is made as to whether there is a variation in the output of the digital test from an expected output of the digital test. If there is variation, a time of the variation is indicated. In one example, a location of a defect in the digital circuit can be determined from the times of the variations. In other embodiments, a mapping of the digital circuit can be made from the times.

Volatile memory devices may be on a first memory module that is coupled to a memory controller by a first signal path. A nonvolatile memory device may be on a second memory module that is coupled to the first memory module by a second signal path. A memory transaction for the nonvolatile memory device may be transferred from the memory controller to at least one of the volatile memory devices using the first signal path and data associated with the memory transaction is to be written from at least one of the volatile memory devices to the nonvolatile memory device using the second signal path and a control signal. A durability circuit may generate the control signal based on a comparison of a number of write transactions to a particular memory location with a threshold value.

A system comprises a testing mode register, a set of pins, and a test access port controller. The test access port controller initiates a first testing mode by configuring the set of pins according to a first pin protocol. The test access port controller configures a first pin to receive first test pattern data based on a first convention and configures a second pin to output first test result data based on the first test pattern data. Based on detecting a register command stored in the testing mode register, the test access port controller initiates a second testing mode by configuring the set of pins according to a second pin protocol. The test access port controller configures the first pin to receive a second test pattern data generated based on a second convention and configures the second pin to output a second test result data based on the second test pattern data.

Embodiments of the disclosure are drawn to apparatuses and methods for soft post-package repair (SPPR). After packaging, it may be necessary to perform post-package repair operations on rows of the memory. During a scan mode of an SPPR operation, addresses provided by a fuse bank may be examined to determine if they are open addresses or if the bad row of memory is a redundant row of memory. The open addresses and the bad redundant addresses may be stored in volatile storage elements, such as in latch circuits. During a soft send mode of a SPPR operation, the address previously associated with the bad row of memory may be associated with the open address instead, and the address of the bad redundant row may be disabled.

A scannable-latch random access memory (SLRAM) is disclosed. The SLRAM includes two rows of memory cells. The SLRAM includes a functional data input, a scan data input, a first and second functional data outputs, a scan data output, and a scan enable. The functional data input is connected to a first memory cell in a first and second rows of memory cells. The scan data input is connected to the first memory cell in the first or second row of memory cells. The first and second functional data outputs are connected to a last memory cell in the first and second row of memory cells, respectively. The scan data output is connected to the last memory cell in the first or second row of memory cells. The scan enable allows data to be output from the scan data output or the first and second functional data outputs.

A storage device includes: a first disabling unit configured to output write enable signals without change when at least two write addresses of a plurality of write addresses for which write enable signals are enabled and held by a first holding unit do not match; a second holding unit configured to hold sets of the plurality of write addresses held by the first holding unit and the plurality of write enable signals output by the first disabling unit; a second disabling unit configured to output one write enable signal of the plurality of write enable signals held by the second holding unit without change in a test mode; and a third holding unit configured to write data in accordance with sets of the plurality of write addresses held by the second holding unit and the plurality of write addresses output by the second disabling unit.

A system comprises a memory sub-system controller mounted to a printed circuit board (PCB) and an in-circuit test (ICT) device. The memory sub-system controller has test points on the PCB comprising stimulus points and observation points. The ICT device connects to the test points of the controller. The ICT device converts automated test pattern generation (ATPG) input test vectors to test signals. A first set of pin drivers of the ICT device applies the test signals to the stimulus points of the controller and a second set of pin drivers of the ICT device read output signals output at the observation points of the controller. A comparator of the ICT device compares the output signals with output test vectors. The comparator provides test result data comprising a result of the comparison.

A memory circuit and a testing method thereof are provided. The memory circuit includes multiple stage non-volatile memory (NVM) devices. An Nth stage NVM device includes a logic memory circuit, an NVM element, a write circuit and a read circuit. The logic memory circuit receives external data via a data input terminal in a normal mode and receives test data via a test input terminal in a test mode. The write circuit writes the test data or the external data to the NVM element during a writing period. The read circuit transmits stored data stored in the NVM element to an output terminal of the logic memory circuit during a reading period.