A memory device to generate intelligent, proactive responses to a read command. For example, signal and noise characteristics of a group of memory cells in a memory device are measured to determine a read voltage. An action is identified based on evaluation of the quality of data retrievable using the read voltage from the group of memory cells. While a response indicating the action is provided responsive to the command, the memory device can initiate the action proactively before a subsequent command, following the response, is received.

A method for testing a circuit includes performing, by a test engine, a test of a memory element of the circuit, the test accesses a memory location in the memory element, the memory location is identified by an address, and the memory location is accessed via a first port associated with a first port select bit. The method further includes, in response to detecting a failure associated with the memory location, determining an existing entry for the address in a failed address register, and determining that the existing entry in the failed address register is associated with a second port select bit, distinct from the first port select bit. The method further includes, in response to the second port select bit being distinct from the first port select bit, setting a multi-port failure flag for the memory element that is being tested.

A method for testing a circuit includes performing, by a test engine, a test of a memory element of the circuit, the test accesses a memory location in the memory element, the memory location is identified by an address, and the memory location is accessed via a first port associated with a first port select bit. The method further includes, in response to detecting a failure associated with the memory location, determining an existing entry for the address in a failed address register, and determining that the existing entry in the failed address register is associated with a second port select bit, distinct from the first port select bit. The method further includes, in response to the second port select bit being distinct from the first port select bit, setting a multi-port failure flag for the memory element that is being tested.

A Memory device comprising a matrix of memory cells, the matrix being provided with at least one first column, the device also being provided with a test circuit configured to perform a test phase during a read operation to indicate whether or not the proportion of cells in said column storing the same logical data, particularly a logical ‘1’, is greater than a predetermined threshold.

A triplication register device includes a first register, a second register and a third register, the three registers being identical and containing the same information in common use, a majority vote device and a self-correction device, the correction being dependent on the result from the majority vote device, each register being controlled by an output of a dual-input multiplexer (mux), the first input corresponding to a functional write operation, the second input corresponding to the result of the majority vote, wherein the triplication device comprises a test device whose function is to block, on command and independently, either the functional write operation to the first register, or the functional write operation to the second register, or the functional write operation to the third register, or the self-correction. The test device may comprise a control register that may also be secured by triplication.

Embodiments provide a test circuit and a memory chip. The test circuit is configured to read compressed data of a memory. The test circuit includes M storage blocks, wherein the M is an even number greater than or equal to 2. N storage blocks constitute one storage group, wherein the N is an even number greater than or equal to 2 and less than or equal to the M, and the M is an integral multiple of the N. The test circuit further includes a compressed data reading unit. One compressed data reading unit corresponds to one storage group. The compressed data reading unit is connected to the N storage blocks in the corresponding storage group. The compressed data reading unit receives a compressed data reading command and address information, and reads data in the N storage blocks according to the compressed data reading command and the address information.

Embodiments provide a test circuit and a memory chip. The test circuit is configured to read compressed data of a memory. The test circuit includes M storage blocks, wherein the M is an even number greater than or equal to 2. N storage blocks constitute one storage group, wherein the N is an even number greater than or equal to 2 and less than or equal to the M, and the M is an integral multiple of the N. The test circuit further includes a compressed data reading unit. One compressed data reading unit corresponds to one storage group. The compressed data reading unit is connected to the N storage blocks in the corresponding storage group. The compressed data reading unit receives a compressed data reading command and address information, and reads data in the N storage blocks according to the compressed data reading command and the address information.

A write circuit for writing to a plurality of memory cells of a non-volatile data memory, including a buffer memory forming a single memory element which is configured to buffer a first data value before storing said value in the plurality of non-volatile memory cells of the non-volatile data memory. The write circuit also includes a first write line, by means of which the buffer memory is connected to a first memory cell of the plurality of memory cells, and a second write line, which is different from the first write line and by means of which the buffer memory is connected to a second memory cell of the plurality of memory cells. The write circuit further includes a control circuit configured to concurrently write the first data value in the first memory cell and a second data value which depends on the first data value into the second memory cell, wherein the second data value is complementary to the first data value or is identical to the first data value depending on a selected one of a first option or a second option by the control circuit, respectively.

An integrated circuit for outputting a function value, comprising a pattern matching circuit, configured to compare an input value and multiple transformed versions of the input value with a specified bit pattern, wherein the transformed versions of the input value or the specified bit pattern are created by repeated application of a transformation to the input value or the specified bit pattern, wherein the function is invariant under the transformation or wherein an inverse transformation exists for the transformation, by means of which a change in the function values that is caused by the transformation of the input values can be reversed, a selection circuit configured to select a function value depending on the matching result of the pattern matching circuit and the input value, and an output circuit configured to output a function value for the input value based on the selected function value.

A memory system may include: an error correction code (ECC) generation circuit suitable for generating an M-bit error correction code using N-bit data, where N and M are positive integers; a memory core suitable for storing the N-bit data and the M-bit error correction code; and an ECC circuit suitable for correcting an error of the N-bit data read from the memory core, using the M-bit error correction code read from the memory core, wherein the ECC generation circuit generates the M-bit error correction code using an M×(N+M) check matrix, wherein one column vector among M column vectors corresponding to the M-bit error correction code in the M×(N+M) check matrix has an odd weight, and the other M column vectors have even weights.