A method for detecting a writing error of a datum in memory includes: storing at least two parts of equal size of a binary word representative of said datum at the same address in at least two identical memory circuits, and comparing internal control signals of the two memory circuits to determine existence of the writing error.

A system include multiple memory dice and a processing device coupled to the multiple memory dice. The processing device is to perform operations, including: reading temperature values from registers at multiple memory dice, wherein each temperature value is associated with a temperature at a respective die of the multiple memory dice; reading error-correcting code (ECC)-protected data from the multiple memory dice; determining whether an ECC check of the ECC-protected data results in detecting an error; in response to detecting the error from the ECC-protected data for a die of the multiple memory dice, performing a confirmation check that the error is a result of a defect in the die; and in response to the confirmation check confirming the die is defective, ignoring a temperature value from the die when determining whether to trigger a thermal-related operation.

An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.

Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).

An integrated circuit includes a memory and peripheral circuits with a temperature sensor used to automatically adjust operating voltages. The temperature sensor includes a first circuit to generate a temperature-dependent voltage (TDV) that is dependent on an operating temperature of the integrated circuit, and a second circuit to generate a plurality of temperature reference voltages, based on or more codes. One or more comparator circuits compare individual ones of the plurality of reference voltages with the TDV, to generate one or more comparison signals that are indicative of the operating temperature of the integrated circuit.

Embodiments of the present disclosure provide a test method and apparatus for a control chip, an electronic device, relating to the field of semiconductor device test technology. The method includes: reading first test vectors stored in a first target memory chip; sending the first test vectors to the control chip; receiving first output information returned by the control chip in response to the first test vectors; and acquiring a first test result of the control chip based on the first output information and the first test vectors corresponding to the first output information. By means of the technical solutions provided in the embodiments of the present disclosure, a memory chip can be used for storing test vectors for a control chip, so that a storage space for test vectors can be enlarged, and the test efficiency can be increased.

A memory apparatus and a memory testing method are provided. The memory testing method includes: generating a plurality of testing patterns; writing each of the testing patterns to a plurality of selected memory blocks of the memory according to a setting address; reading out a plurality of pieces of readout data from the selected memory blocks according to the setting address; and comparing the plurality of pieces of readout data to generate a testing result.

A memory test method and apparatus, an electronic device, and a computer-readable storage medium are provided. The method includes: obtaining a test instruction; generating, in response to the test instruction, a test clock signal, a to-be-tested address and to-be-tested data; determining a to-be-tested memory from memories of a storage device, the storage device including a self-test circuit; writing the to-be-tested data into a storage unit corresponding to the to-be-tested address of the to-be-tested memory; reading output data from the storage unit corresponding to the to-be-tested address of the to-be-tested memory; and comparing the to-be-tested data and the output data to obtain a test result of the to-be-tested memory. The self-test circuit disposed in the storage device is used to implement a memory test process. Thus, the dependency on automatic test equipment is reduced, thereby improving test speed and reducing test cost.

A system include multiple memory dice and a processing device coupled to the multiple memory dice. The processing device is to perform operations, including: reading temperature values from registers at multiple memory dice, wherein each temperature value is associated with a temperature at a respective die of the multiple memory dice; reading error-correcting code (ECC)-protected data from the multiple memory dice; determining whether an ECC check of the ECC-protected data results in detecting an error; in response to detecting the error from the ECC-protected data for a die of the multiple memory dice, performing a confirmation check that the error is a result of a defect in the die; and in response to the confirmation check confirming the die is defective, ignoring a temperature value from the die when determining whether to trigger a thermal-related operation.

An integrated circuit (IC) is provided for in-situ anomaly detection. Sensors in the IC generates sensor datasets including information indicating conditions in the IC. A processing unit in the IC uses a sensor dataset and a model to detect and classify the anomaly. The processing unit may filter the sensor dataset, extract features from the filtered sensor dataset, and input the features into the model. The model outputs one or more classifications of the anomaly. A feature may be a distance vector that represents a difference between a data value in the filtered sensor dataset from a reference data value. The model may be a network of bit-cells in the IC. The model may be continuously trained in-situ, i.e., on the IC. The processing unit may provide the classifications to another processing unit in the IC. The other processing unit may mitigate the anomaly based on the classifications.