An integrated optical device includes a substrate. A waveguide includes a lithium niobate. A TiO.sub.2 coating is disposed at least in part over a longitudinal surface of the waveguide as a coated waveguide supported by the substrate. A silicon oxide substantially can cover and surround the waveguide in cross section over a longitudinal direction of said waveguide as an optical cladding. A method for substantially eliminating optical damage in lithium niobate devices is also described.

The invention relates to a method for detecting the absolute temperature or temperature changes and/or the absolute wavelength or wavelength changes of an optical probe signal using an optical detection device including an optical waveguide structure defining an optical input port adapted to receive the optical probe signal and a first and a second optical output port adapted to output a first and a second optical detection signal, respectively. As a response to the optical probe signal, the optical waveguide structure being configured in such a way that a first power transfer function characterizing the transmission of the optical probe signal from the optical input port to the first optical output port differs, with respect to its wavelength and temperature dependency, from a second power transfer function characterizing the transmission of the optical probe signal from the optical input port to the second optical output port. The method includes the steps of transmitting the optical probe signal having a predetermined, but not necessarily constant, wavelength to the optical input port; detecting the first and second optical detection signal at the first and second optical output port by means of a first a and second opto-electrical converter which create a first and second electrical signal corresponding to the optical power of the respective first or second optical detection signal; measuring values of the first and second electrical signal and determining an absolute temperature value or a value of a temperature change of the optical waveguide structure and/or an absolute wavelength value or a value of a wavelength change of the optical probe signal by using the values measured of the first and second electrical signal and a first and a second previously determined wavelength and temperature dependency of both the first and second power transfer function. The invention further relates to an optical detection device for implementing this method.

An optical system can automatically lock an adjustable spectral filter to a first wavelength of an incoming light signal, and can automatically filter an additional incoming light signal at the first wavelength. A tunable filter can have a filtering spectrum with an adjustable peak wavelength and increasing attenuation at wavelengths away from the adjustable peak wavelength. The tunable filter can receive first input light, having a first wavelength, and can spectrally filter the first input light to form first output light. A detector can detect at least a fraction of the first output light. Circuitry coupled to the detector and the tunable filter can tune the tunable filter to maximize a signal from the detector and thereby adjust the peak wavelength to match the first wavelength. The tunable filter further can receive second input light and spectrally filter the second input light at the first wavelength.

A ring resonator device includes a passive optical cavity having a circuitous configuration into which is built a photodetector device. The photodetector device includes a first implant region formed within the passive optical cavity that includes a first type of implanted doping material. The photodetector device includes a second implant region formed within the passive optical cavity that includes a second type of implanted doping material, where the second type of implanted doping material is different than the first type of implanted doping material. The photodetector device includes an intrinsic absorption region present within the passive optical cavity between the first implant region and the second implant region. A first electrical contact is electrically connected to the first implant region and to a detecting circuit. A second electrical contact is electrically connected to the second implant region and to the detecting circuit.

Techniques for the integration of SiGe/Si optical resonators with qubit and CMOS devices using structured substrates are provided. In one aspect, a waveguide structure includes: a wafer; and a waveguide disposed on the wafer, the waveguide having a SiGe core surrounded by Si, wherein the wafer has a lower refractive index than the Si (e.g., sapphire, diamond, SiC, and/or GaN). A computing device and a method for quantum computing are also provided.

A photonic integrated circuit includes a slot optical waveguide having an optical core with sub-wavelength slot therein that is partially filled with a first lower-index material having a negative thermo-optic coefficient. The slot may also include a second lower-index material having a positive thermo-optic coefficient. The relative volume of the first lower-index material within the slot may be configured to provide athermal or nearly-athermal operation. Example applications include integrated AWG MUX/DEMUX devices, Mach-Zehnder modulators, and micro-ring resonators or modulators implemented with silicon-based or silicon-nitride based slot waveguides with reduced sensitivity to temperature changes.

Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

A first portion of incoming light and a second portion of incoming light travel in opposite directions within a first optical waveguide. A ring resonator in-couples the first portion of incoming light and the second portion of incoming light from the first optical waveguide, such that the first portion of incoming light and the second portion of incoming light travel in opposite directions within the ring resonator. A second optical waveguide is disposed to in-couple the first portion of incoming light and the second portion of incoming light couple from the ring resonator, such that the first portion of incoming light and the second portion of incoming light travel in opposite directions within the second optical waveguide away from the ring resonator. One or more photodetector(s) are optically connected to receive the first portion of incoming light and the second portion of incoming light from the second optical waveguide.

A photonic device for detecting rotation and a corresponding method for operation thereof are disclosed. The photonic device includes a readout structure coupled to a ring resonator at one or more coupling points. Light is split between a lower waveguide and an upper waveguide of the readout structure in a forward direction at a beam splitter. The light in the waveguides traveling in the forward direction is coupled into the ring resonator and subsequently back into the waveguides in a reverse direction. The light is spatially phase tilted and is combined at the beam splitter. The combined light is detected by a split detector.

Systems, methods, and computer-readable media are described for performing link training to enable optical pass-through (OPT) capabilities of a network node. OPT capabilities may refer to on-chip wavelength routing for a multi-wavelength data input, whereby an intermediate node detects wavelengths that are intended for OPT and transparently passes the wavelengths through to downstream nodes. When executed at an intermediate network node, an OPT link training algorithm can result in the creation of one or more wavelength routing maps that associate wavelengths received on particular inputs to the node with particular outputs of the node. An intermediate node may generate a respective wavelength routing map for each transmit node from which it receives input data. The wavelength routing maps may together implement OPT capabilities at the intermediate node as each wavelength routing map may indicate the manner in which wavelengths are passed through the intermediate node for a given transmit node.