A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) having first, second, and third regions and including first material layers having a low index of refraction and second material layers having a high index of refraction, in which the first material layers include a first group having an optical thickness greater than 0.25+10%, a second group having an optical thickness in a range of 0.2510% to 0.25+10%, and a third group having an optical thickness less than 0.2510%, the first region has alternately disposed first and second groups, the second region has the third group, the first material layers in the third region have a first material layer having an optical thickness less than 0.25 and greater than 0.25, the second material layers have a smaller average optical thickness than the first group of the first material layers.

A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) having first, second, and third regions and including first material layers having a low index of refraction and second material layers having a high index of refraction, in which the first material layers include a first group having an optical thickness greater than 0.25+10%, a second group having an optical thickness in a range of 0.2510% to 0.25+10%, and a third group having an optical thickness less than 0.2510%, the first region has alternately disposed first and second groups, the second region has the third group, the first material layers in the third region have a first material layer having an optical thickness less than 0.25 and greater than 0.25, the second material layers have a smaller average optical thickness than the first group of the first material layers.