The present application provides a photoresist, a display panel, and a display device. The photoresist is with a photosensitive polymerizable compound, wherein under irradiation of light of a first wavelength, the photosensitive polymerizable compound behaves as a hydrophilic polymerizable compound, and under irradiation of light of a second wavelength, the photosensitive polymerizable compound behaves as a hydrophobic polymerizable compound.

A display device includes a display element including a first electrode, a protective layer arranged on the first electrode, a second electrode arranged on the protective layer at a pixel area and contacting a thin film transistor. A sensing line is arranged on the protective layer and contacts the first electrode through a contact hole exposing the first electrode through the third protective layer. The sensing line comprises a first conductive layer arranged on the protective layer and contacting the second electrode through the contact hole, and a second conductive layer arranged on the first conductive layer.

Provided are a manufacturing method for an array substrate and an array substrate, the method includes: depositing a gate metal layer on a base substrate, and forming a gate electrode by first photolithography process; sequentially depositing a gate insulating layer, a first semiconductor layer, a second semiconductor layer, and a source/drain metal layer, forming an active island, a source electrode, and a drain electrode and forming a channel region between the source electrode and drain electrode by second photolithography process, and converting the second semiconductor layer in channel region into an oxide of silicon; depositing a passivation layer, and forming a conductive via hole on passivation layer over drain electrode by third photolithography process; depositing a transparent conductive layer, and performing fourth photolithography process such that a pixel electrode is formed by transparent conductive layer and that the pixel electrode communicates with the drain electrode through the conductive via hole.

A display panel and method of manufacturing the same are provided. The method of manufacturing the display panel includes the steps of providing a substrate, forming a gate on the substrate, forming a gate insulating layer on the gate and the substrate, forming a polysilicon layer on the gate insulating layer, performing a first gray-scale mask process on the polysilicon layer to form a source region, a drain region and an active region located between the source region and the drain region by the polysilicon layer, forming an interlayer dielectric layer on the gate insulating layer and the polysilicon layer, forming a first electrode layer on the interlayer dielectric layer, performing a second gray-scale mask process on the first electrode layer and the interlayer dielectric layer.

The present application provides a photoresist, a display panel, and a display device. The photoresist is with a photosensitive polymerizable compound, wherein under irradiation of light of a first wavelength, the photosensitive polymerizable compound behaves as a hydrophilic polymerizable compound, and under irradiation of light of a second wavelength, the photosensitive polymerizable compound behaves as a hydrophobic polymerizable compound.

A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.

The present application discloses a display panel and a display apparatus. The display panel includes: a first substrate; a second substrate; and a plurality of spacers, supporting the first substrate and the second substrate, and disposed between the first substrate and the second substrate, where the spacers are disposed at an interval, and the spacers includes a first spacer and a second spacer, a height gap is formed between the first spacer and the second spacer.

The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second, insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

A display device and a method of manufacturing the display device are disclosed. In one aspect, the display device includes a substrate including a display region and a peripheral region. A first block member is in the peripheral region and surrounding display structures, the first block member having a first height. A second block member is spaced apart from the first block member in a first direction extending from the display region to the peripheral region, the second block member surrounding the first block member, the second block member having a second height that is greater than the first height. A first encapsulation layer is over the display structures, the first block member, and the second block member. A second encapsulation layer is over the first encapsulation layer, the second encapsulation layer overlapping at least a portion of the first block member in the depth dimension of the display device.

A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor includes a first electrode, a gate electrode, an active layer, a source/drain electrode and a second electrode. The source/drain electrode is connected with the active layer, the first electrode is provided oppositely to the second electrode; the second electrode is provided in the same layer as the source/drain electrode; and the second electrode and the source/drain electrode are formed in a single patterning process.