A display device includes a pixel electrode, a signal line, a pixel electrode, and a blocking portion. The signal line is configured to transmit a signal to the pixel electrode. The pixel electrode connecting line is disposed a predefined distance apart from the signal line and connected to the pixel electrode. The blocking portion is disposed between a connecting portion of the pixel electrode connected to the pixel electrode connecting line and the signal line to block an electric field between the connection portion and the signal line.

A thin film transistor is disclosed, comprising a first, second and third electrode. The first and second electrodes are arranged in a same layer and insulated from each other. The third electrode is arranged below and insulated from the first and second electrodes. The first electrode comprises at least one first conducting part. The second electrode comprises second conducting parts, each of which is arranged adjacent with each first conducting part. The third electrode is provided with an opening part at least partially overlapping with the first or second conducting part. If the first or second conducting part is subject to a channel defect due to short circuit, the first or second conducting part is cut off at an overlapping position with the opening part, to repair the channel defect without affecting the third electrode. A GOA circuit, a display substrate and a display device are further disclosed.

A method for correcting defect with turning a defective pixel into a black point in a display panel (1) comprising a plurality of pixels (10) each comprising a transistor (11, 12). The present method comprises detecting a pixel to be corrected from among the plurality of pixels in the display panel. The present method comprises implanting an ion into a given region corresponding to the transistor in a detected pixel such that the transistor (12) does not turn on at a time of display operation of the display panel.

A thin film transistor, a display substrate and a method for repairing the same, and a display device are provided. The thin film transistor includes: an active region, a gate insulating layer disposed on a side of the active region, and a gate disposed on a side of the gate insulating layer distal to the active region, and the active region includes a first electrode contact region at one end of the active region, a second electrode contact region at the other end of the active region, and a plurality of connection regions between the first electrode contact region and the second electrode contact region, and each of the plurality of connection regions is coupled to the first electrode contact region and the second electrode contact region, and every two adjacent connection regions are provided with an opening therebetween and are spaced apart from each other by the opening.

A method of repairing a transistor, for repairing a short-circuit defect of a metal layer between a source and a drain of a thin film transistor; the repairing method including: acquiring a short-circuit region of the metal layer between the source and the drain of the thin film transistor; etching a protective layer located above the short-circuit region with a first wavelength laser; etching the metal layer located in the short-circuit region with a second wavelength laser; and partially etching a channel layer below the short-circuit region with a third wavelength laser.

A display device including: a first substrate; a first electrode layer disposed on an edge of the first substrate; a second electrode layer disposed on the first electrode layer; the first electrode layer and the second electrode layer defining a space in between; a metal sludge disposed in the space; and a connection electrode configured to cover a side surface of the first substrate, and disposed in the space to contact the first electrode layer, the second electrode layer, and the metal sludge.

According to one embodiment, a display device including a first substrate including a first pixel and a second pixel, a second substrate, a liquid crystal layer containing polymer and liquid crystal molecules, and a light emitting element, wherein the second pixel is located between the light emitting element and the first pixel, the first substrate includes a switching element including a semiconductor layer arranged in the first pixel, a pixel electrode, and a first light shielding portion arranged in the second pixel and being adjacent to the semiconductor layer, the first light shielding portion is located between the semiconductor layer and the light emitting element in planar view and located on a side closer to the first pixel than a center of the second pixel.

A liquid crystal display includes: a first insulation substrate; a gate line disposed on the first insulation substrate; a first data line and a second data line disposed on the first insulation substrate; a color filter disposed on the first insulation substrate and disposed between the first data line and the second data line; a first light blocking member disposed on the first data line and the second data line; and a second light blocking member disposed on the color filter and the first light blocking member, extending in the same direction as the gate line, and overlapping the first light blocking member on the first data line and the second data line.

An array substrate according to the present invention is a TFT substrate including a pixel TFT and a drive TFT on a substrate, where the pixel TFT includes a first source electrode, a first drain electrode, and an amorphous silicon layer, and the drive TFT includes a third oxide semiconductor layer provided on a gate insulating film while overlapping a second gate electrode in plan view, and a second source electrode and a second drain electrode overlapping the third oxide semiconductor layer in plan view, with a third separation portion separating the second source electrode and the second drain electrode from each other.

The present disclosure discloses an array substrate comprising: a substrate; a gate electrode; a gate insulating layer formed on one side of the substrate facing the gate electrode, the gate insulating layer covering the gate electrode; an active layer formed on one side of the gate insulating layer away from the gate electrode and made of an indium gallium zinc tin oxide material; an ohmic contact layer formed on one side of the active layer away from the gate insulating layer and made of a conductive indium gallium zinc oxide material, the ohmic contact layer covering both ends of the active layer; and a source electrode and a drain electrode formed on one side of the ohmic contact layer away from the active layer, the source electrode and the drain electrode being electrically connected to both ends of the active layer by the ohmic contact layer, respectively.