An array substrate, a display device, and a fabricating method are disclosed. The array substrate includes a substrate and a thin film transistor disposed on the substrate. The thin film transistor includes a semiconductor layer, and further includes a light-shielding and heat-insulating layer, where the semiconductor layer is disposed above the light-shielding and heat-insulating layer. The light-shielding and heat-insulating layer includes a light-shielding matrix and a flake-shaped cluster structure. The light-shielding matrix includes a porous structure, the porous structure including multiple holes, and the flake-shaped cluster structure is disposed in these holes. The light-shielding and heat-insulating layer is used to shield incident light, and the flake-shaped cluster structure is used to absorb heat generated by the incident light.

A method for manufacturing semiconductor device according to an embodiment includes: forming a first metal oxide layer containing aluminum as a main component above a substrate; forming an oxide semiconductor layer above the first metal oxide layer; forming a gate insulating layer above the oxide semiconductor layer; forming a second metal oxide layer containing aluminum as a main component above the gate insulating layer; performing a heat treatment in a state where the second metal oxide layer is formed above the gate insulating layer; removing the second metal oxide layer after the heat treatment; and forming a gate electrode above the gate insulating layer.

According to one embodiment, a display device includes a gate line extending in a first direction, first and second source lines crossing the gate line and arranged in the first direction, a first light-shielding layer having first and second openings, and an oxide semiconductor layer crossing the gate line, and in the display device, the first opening and the second opening are arranged in a second direction crossing the first direction between the first source line and the second source line, the gate line is located between the first opening and the second opening, and the oxide semiconductor layer has a first overlapping portion overlapping the first opening.

Provided are an array substrate mother board, an array substrate, a display panel and a display device. The array substrate mother board includes array substrates, the array substrate includes a component disposing area; the array substrate includes a base substrate and a drive circuit layer, the drive circuit layer includes a first metal layer, and the first metal layer includes capacitor plates arranged in an array along the first direction and along the second direction; the plurality of array substrates include first-type array substrates, and the plurality of first-type array substrates are arranged along the first direction and are adjacent to a boundary extending along a first direction in the mother board of the array substrate.

According to one embodiment, a display device includes signal lines, and a signal line switching circuit connected to the signal lines. The signal line switching circuit includes a plural first lines each extending in a first direction and disposed at intervals in a second direction, a plural transistors apart from the first lines in the second direction and arranged in the first direction, each transistor including a gate electrode and a light shielding layer disposed to overlap with the gate electrode, and a plural second lines connecting the transistors to the first lines. The light shielding layer includes an extension part extending to an area where the first line does not exist, and is electrically connected to the gate electrode.

An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

A display device includes a substrate, a plurality of signal lines, a plurality of terminals, a plurality of wiring lines, metal wiring, a second metal layer, a third metal layer. In a first wiring region, each wiring line is composed of the first metal layer and extends in a second direction intersecting with the first direction. In a second wiring region between the first wiring region and the terminals, the wiring lines include the wiring line composed of the first metal layer and the second metal layer and the wiring line composed of the third metal layer. The metal wiring is provided in a different layer from the first metal layer; and intersects with the wiring lines in the first wiring region and extends in the first direction when viewed from a direction perpendicular to the substrate.

The present disclosure provides a display panel. The display panel includes a data line; a transistor electrically connected to the data line, wherein the transistor includes a patterned active layer disposed in an area corresponding to the data line; and a shielding layer disposed between the patterned active layer and the data line.

A high definition display device is provided. The display device includes an array substrate, and an opposing substrate. The array substrate has a substrate, and on the substrate, a first pixel having a first color filter and a second pixel having a second color filter disposed adjacent to the first pixel. Each of the first color filter and the second color filter has a first dielectric layer, a transmissive layer disposed on the first dielectric layer, and a second dielectric layer disposed on the transmissive layer. The transmissive layer of the first color filter has a first film thickness, and the transmissive layer of the second color filter has a second film thickness larger than the first film thickness. On the transmissive layer of the second color filter, a first layer different from the transmissive layer is disposed on a side of the transmissive layer of the first color filter. A height of a bottom face of the first layer is equal to the first film thickness.

According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.