According to one embodiment, a display device includes a first substrate and a second substrate. The first substrate includes a first switching element, a second switching element, a first organic insulating layer, a second organic insulating layer, a third organic insulating layer, a first connection electrode electrically connected to the first switching element, a second connection electrode electrically connected to the first connection electrode, a pixel electrode electrically connected to the second connection electrode, and a photoelectric conversion element electrically connected to the second switching element.

An array substrate, a display panel, and an electronic device are provided. The array substrate includes a substrate, a first conductive layer including a first connection part, a fourth insulating layer disposed on the first conductive layer and provided with a second via, and a second conductive layer disposed on the fourth insulating layer and in the second via. The second conductive layer includes a second electrode, and the second electrode is connected to the first connection part through the second via.

The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

The liquid crystal display device includes: a display region for displaying an image; and a frame region surrounding the display region, the liquid crystal display device sequentially including from a viewing surface side toward a back surface side: a first polarizing plate; a first substrate provided with a switching element connected to a gate line and a source line; a liquid crystal layer; a second substrate; and a second polarizing plate, in the frame region, the first substrate sequentially including from a viewing surface side toward a back surface side a support substrate, a reflectance-reducing layer, and a metal line layer that overlaps the reflectance-reducing layer and includes at least one of a gate line layer provided with the gate line or a source line layer provided with the source line, the reflectance-reducing layer having a lower viewing surface side reflectance than the metal line layer.

An array substrate has a display area and a bonding area located on a side of the display area. The array substrate includes a base, a plurality of first transistors, a plurality of conductive pins and a plurality of conductive electrodes. The plurality of first transistors are disposed on a side of the base and located in the display area; a first transistor includes a first gate, a first source and a first drain. The plurality of conductive pins are disposed on the side of the base and located in the bonding area, and are disposed in a same layer as the first gate. The plurality of conductive electrodes are each disposed on a respective one of surfaces of the plurality of conductive pins away from the base.

An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

According to one embodiment, a display device includes signal lines, and a signal line switching circuit connected to the signal lines. The signal line switching circuit includes a plural first lines each extending in a first direction and disposed at intervals in a second direction, a plural transistors apart from the first lines in the second direction and arranged in the first direction, each transistor including a gate electrode and a light shielding layer disposed to overlap with the gate electrode, and a plural second lines connecting the transistors to the first lines. The light shielding layer includes an extension part extending to an area where the first line does not exist, and is electrically connected to the gate electrode.

An active matrix substrate includes a substrate, a first gate bus line, a second gate bus line, a third gate bus line, a first source bus line, a second source bus line, a first pixel region, a second pixel region, and a first source contact portion. When viewed from a normal direction of the substrate, a first opening portion is located between the second gate bus line and the third gate bus line, and a first distance D1 in a column direction between the second gate bus line and the first opening portion and a second distance D2 in the column direction between the third gate bus line and the first opening portion are both ⅕ or more of a second interval Dy2 in the column direction between the second gate bus line and the third gate bus line.

According to one embodiment, a display device includes first semiconductor layers crossing a first scanning line in a non-display area, the first semiconductor layers being a in number, second semiconductor layers crossing a second scanning line in the non-display area, the second semiconductor layers being b in number, and an insulating film disposed between the first and second semiconductor layers and the first and second scanning lines, wherein a and b are integers greater than or equal to 2, and a is different from b, and the first and second semiconductor layers are both entirely covered with the insulating film.

According to an embodiment of the present invention, an active matrix substrate (100) includes a display region (DR) defined by a plurality of pixel regions (P) arranged in a matrix and a peripheral region (FR) located around the display region. The active matrix substrate includes a substrate (1), a first TFT (10), and a second TFT (20). The first TFT is supported by the substrate and disposed in the peripheral region. The second TFT is supported by the substrate and disposed in the display region. The first TFT includes a crystalline silicon semiconductor layer (11), which is an active layer. The second TFT includes an oxide semiconductor layer (21), which is an active layer. The first TFT and the second TFT each have a top-gate structure.