A display device with high visibility regardless of the ambient brightness is provided. The display device includes a first display element, a second display element, a first transistor, and a second transistor. The first display element has a function of reflecting visible light. The second display element has a function of emitting visible light. The first transistor has a function of controlling the driving of the first display element. The second transistor has a function of controlling the driving of the second display element. The first transistor is positioned closer to a display surface side of the display device than the first display element is. The first display element is positioned closer to the display surface side of the display device than the second display element and the second transistor are.

An array board 11b includes a display section AA, a source line 20 connected to the display section AA, a test circuit 40 connected to the source line 20 and configured to test the display section AA, a panel-side image input terminal that is disposed such that the test circuit 40 is between the terminal and the display section AA and to which a signal to be supplied to the source line 20 is input, a terminal connection line 51 connecting the source line 20 to the pane-side image input terminal 35A and the terminal connection line 51 including the terminal connection line 51 at least a part of which overlaps the test circuit 40 and a flattening film (insulation film) 28 at least disposed between an overlapping portion of the test circuit 40 and the terminal connection line 51.

An array substrate and a liquid crystal display device comprising the array substrate are disclosed. The array substrate comprises a pixel unit having a thin film transistor region and a through-hole region. The pixel unit comprises a glass substrate, a first insulation layer, a second insulation layer, a third insulation layer, a fourth insulation layer, and a fifth insulation layer stacked from bottom up in sequence. In the thin film transistor region, the glass substrate is provided with a light-shading metal member that is covered by the first insulation layer, the first insulation layer is provided with an active layer that is covered by the second insulation layer, two ends of the active layer are respectively connected with a source and a drain formed between the third insulation layer and the fourth insulation layer, the second insulation layer is provided with a gate that is covered by the third insulation layer, and the fourth insulation layer is provided with a common electrode that is covered by the fifth insulation layer. In the through-hole region, a pixel electrode is arranged on the fifth insulation layer and a through hole is configured in the fourth insulation layer, so that the pixel electrode is connected with the source or the drain after passing through the fifth insulation layer. A cushion layer is arranged under the through hole in an insulated manner.

A transistor is positioned on a substrate. The transistor includes a semiconductor layer. A buffer layer is positioned between the substrate and the semiconductor layer of the transistor, including an insulating material. A bottom layer is positioned between the substrate and the buffer layer. The bottom layer and the semiconductor layer overlap each other. The bottom layer includes a first layer, a second layer, and a third layer that are stacked on each other in a direction away from the substrate.

A display device of an embodiment includes scanning lines, signal lines, sub-pixels, a switching element in each of the sub-pixels, a pixel electrode in each of the sub-pixels. The switching element includes a relay electrode in contact with the pixel electrode, and a semiconductor layer in contact with the signal line in a first position, in contact with the relay electrode in a second position, and bending between the first position and the second position and crossing the scanning line. In at least one of the sub-pixels, a part of the scanning line extends between the relay electrode and the signal line which are connected to each other via the semiconductor layer.

A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

A display device includes: a pixel section provided between a pair of substrates and including plural pixels; one or plural active components disposed in a frame region around the pixel section on one substrate of the pair of substrates; an insulating film provided in the frame region on the one substrate to cover the one or plural active components; and a sealing layer provided to seal the pixel section and cover an end edge portion of the insulating film in the frame region.

The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.

A thin-film transistor includes a resin substrate and a thin-film transistor layer. The resin substrate has flexibility, and has volume resistivity of equal to or greater than 1×10.sup.17 Ω.Math.cm. The thin-film transistor layer is provided on the resin substrate.

A display device includes a first transistor. The first transistor includes an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a gate insulating layer between the oxide semiconductor layer and the first gate electrode. The first gate electrode has hydrogen storage properties.