Provided is a reference voltage circuit configured to supply a reference voltage in which a variation in voltage with respect to a variation in power supply voltage is suppressed. The reference voltage circuit includes a reference voltage generation circuit which includes an output line for supplying a generated reference voltage to an output terminal; and an output control circuit which includes an output transistor and a stabilization transistor, and is configured to control the supply of the reference voltage to the output terminal, the output transistor containing a gate to which a control voltage is to be provided, the stabilization transistor containing a gate to be connected to a source of the output transistor, and a source to be connected to a drain of the output transistor, and having a gate-source voltage that is equal to or more than a dram-source voltage in a saturation region of the output transistor.

In accordance with an embodiment, a circuit includes: a trimmable reference current generator having a temperature dependent current output node, the trimmable reference current generator including: a proportional to absolute temperature (PTAT) current generation circuit; a first programmable current scaling circuit coupled to the PTAT current generation circuit and including a first output coupled to the temperature dependent current output node; a constant current generation circuit; a second programmable current scaling circuit coupled to the constant current generation circuit and including a first output coupled to the temperature dependent current output node; and a reference interface circuit having an input coupled to the temperature dependent current output node and an output configured to be coupled to a reference current input of a memory sense amplifier.

Voltage reference with temperature compensation. At least one example embodiment is a method of producing a compensate voltage reference, the method comprising: driving a reference current through a reference current path of a current mirror, and driving a mirror current through a mirror current path of the current mirror; driving the reference current through a first reference transistor having a control input, and driving the mirror current though a second reference transistor having a control input; equalizing the reference current flow through the first reference transistor to the mirror current flow through the second reference transistor by adjusting a control voltage on the control inputs of the first and second reference transistors; producing a reference voltage proportional to the control voltage; and compensating the reference voltage for temperature effects by adjusting a mirror ratio of the current mirror.

A semiconductor integrated circuit includes a bandgap reference circuit that includes a first bandgap element, a second bandgap element, and a current mirror circuit. The bandgap reference circuit is configured to generate a temperature-dependent first voltage and a temperature-independent reference voltage. The semiconductor integrated circuit includes an analog-to-digital converter configured to convert the first voltage into an output code based on the reference voltage and output the first voltage as temperature information, and a setting control circuit configured to change at least one setting of the bandgap reference circuit based on the temperature information.

Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.

A bandgap voltage regulator includes a proportional-to-absolute-temperature (PTAT) circuit, an amplifier, and a driver circuit. The PTAT circuit can include various transistors that output a corresponding control voltage. The amplifier generates another control voltage to compensate base-current variations associated with the transistors of the PTAT circuit. The control voltage is generated by the amplifier based on the control voltage outputted by the PTAT circuit, and one of a base-emitter voltage associated with a transistor of the PTAT circuit, a scaled down version of the control voltage outputted by the amplifier, and a scaled down version of the base-emitter voltage. The driver circuit outputs, based on a supply voltage and the control voltages outputted by the PTAT circuit, a reference voltage for driving a functional circuit.

Voltage-to-current converters that include two current mirrors are disclosed. In an example voltage-to-current converter each current mirror is a complementary current mirror in that one of its input and output transistors is a P-type transistor and the other one is an N-type transistor. Such voltage-to-current converters may be implemented using bipolar technology, CMOS technology, or a combination of bipolar and CMOS technologies, and may be made sufficiently compact and accurate while operating at sufficiently low voltages and consuming limited power.

Example implementations include a bandgap voltage device with a first current source operatively coupled to a bandgap input node and a bandgap output node and operable to output a first proportional-to-absolute-temperature (PTAT) current, a current mirror including a first bandgap transistor and a second bandgap transistor, and operatively coupled to the bandgap output node, and a second current source operatively coupled to the current mirror and operable to output a second PTAT current. Example implementations also include a bandgap transistor device with a first P+ layer proximate to a center of a planar surface of a transistor device, a first N+ layer at least partially surrounding the first P+ layer along the planar surface, a second P+ layer at least partially surrounding the first N+ layer along the planar surface, a second N+ layer at least partially surrounding the second P+ layer along the planar surface, and a third P+ layer at least partially surrounding the second N+ layer along the planar surface.

An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature sensor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.

A substrate current suppression circuit includes: a fixed voltage line that supplies a fixed voltage to the collectors of the third and fourth transistors. The fixed voltage is a voltage higher than the base voltage of the third and fourth transistors when the first polarity is p type, and is a voltage lower than the base voltage when the first polarity is n type.