According to one embodiment, a semiconductor device includes a first current mirror having an output end coupled to a first node, a second current mirror having an output end coupled to a second node, a third current mirror having an input end coupled to the second node and an output end coupled to the first node, a fourth current mirror having an input end coupled to the first node, and an output driver that generate a current based on the fourth current mirror. A current flows to the first current source changes at a first ratio with respect to temperature, a current flows to the second current source changes at a second ratio having a negative correlation with respect to temperature, and an absolute value of the first ratio is smaller than that of the second ratio.

An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.

An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.

Voltage-to-current converters that include two current mirrors are disclosed. In an example voltage-to-current converter each current mirror is a complementary current mirror in that one of its input and output transistors is a P-type transistor and the other one is an N-type transistor. Such voltage-to-current converters may be implemented using bipolar technology, CMOS technology, or a combination of bipolar and CMOS technologies, and may be made sufficiently compact and accurate while operating at sufficiently low voltages and consuming limited power.

Voltage reference with temperature compensation. At least one example embodiment is a method of producing a compensate voltage reference, the method comprising: driving a reference current through a reference current path of a current mirror, and driving a mirror current through a mirror current path of the current mirror; driving the reference current through a first reference transistor having a control input, and driving the mirror current though a second reference transistor having a control input; equalizing the reference current flow through the first reference transistor to the mirror current flow through the second reference transistor by adjusting a control voltage on the control inputs of the first and second reference transistors; producing a reference voltage proportional to the control voltage; and compensating the reference voltage for temperature effects by adjusting a mirror ratio of the current mirror.

Methods, apparatus, systems and articles of manufacture are disclosed for temperature insensitive voltage supervisors. An example apparatus includes a PTAT generation circuit including an output terminal: a first resistor having a first terminal and a second terminal, a second resistor having a third terminal and a fourth terminal, the third terminal coupled to the second terminal at a first node, a first transistor including a base terminal coupled to the fourth terminal of the second resistor at a second node, and a first current terminal coupled to the fourth terminal of the second resistor, a comparator including, a first input terminal coupled to the output terminal of the PTAT generation circuit at a third node, a second input terminal coupled to the second terminal and third terminal, and a third resistor having a fifth terminal coupled to the third terminal and the second input terminal at a fourth node.

A power supply circuit included in a computer system regulates a power supply voltage using an input power supply. During startup, the power supply circuit uses a first reference voltage that is generated using the input power supply to regulated the power supply voltage. After a period of time has elapsed, the power supply circuit switches to using a more accurate second reference voltage that is generated using the regulated power supply voltage.

A semiconductor integrated circuit includes a bandgap reference circuit that includes a first bandgap element, a second bandgap element, and a current mirror circuit. The bandgap reference circuit is configured to generate a temperature-dependent first voltage and a temperature-independent reference voltage. The semiconductor integrated circuit includes an analog-to-digital converter configured to convert the first voltage into an output code based on the reference voltage and output the first voltage as temperature information, and a setting control circuit configured to change at least one setting of the bandgap reference circuit based on the temperature information.

An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.

An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.