A reference current generator circuit generating a reference current that is proportional to absolute temperature as a function of a difference between bias voltages of first and second transistors. A voltage generator generates an input voltage from the reference current by applying the reference current that is proportional to absolute temperature through a plurality of transistors coupled in series between the bias voltage of the second transistor and ground, with the input voltage being generated at a node between given adjacent ones of the plurality of transistors. The input voltage is complementary to absolute temperature. A differential amplifier is biased by a current derived from the reference current and generates a temperature insensitive output reference voltage from the input voltage and a voltage proportional to absolute temperature.

A driver circuit includes three sub-circuits. A first sub-circuit is configured to generate a drive current output by the driver circuit through an output node during first and second regions of operation and includes: a diode coupled to the output node and a first transistor, and a second transistor coupled to the first transistor and a current mirror. A second sub-circuit is configured to generate the drive current during the first and second and a third region of operation and includes: a third transistor coupled to the output node; and a fourth transistor. A third sub-circuit is configured to generate the drive current during the third region of operation and includes: a current source coupled to the current mirror and a buffer; and a fifth transistor coupled to the third transistor and the fourth transistor and configured to receive an output of the buffer.

A voltage regulator comprising a reference current generator coupled between a supply terminal and a reference terminal and configured to provide a reference current that is independent of an operating range of a supply voltage; and a regulator stage comprising: a current terminal configured to receive the reference current; a NMOS transistor having: a gate coupled to the current terminal; a drain coupled to the supply terminal; and a source coupled to an output terminal; a voltage reference circuit for providing a regulated output voltage coupled between the output terminal and the reference terminal, the voltage reference circuit comprising an output resistor coupled in series with a conduction channel of an output bipolar transistor arranged in a diode-connected configuration; an input bipolar transistor having: a conduction channel coupled between the current terminal and the reference terminal; and a base terminal coupled to a base terminal of the output bipolar transistor.

An electronic system comprising a voltage-to-current converter and a proportional-to-absolute-temperature (PTAT) circuit is disclosed. The voltage-to-current converter is configured to receive one of a control voltage, a supply voltage, a scaled-down version of the control voltage, and a scaled-down version of the supply voltage, and generate a set of currents. The PTAT circuit is coupled with the voltage-to-current converter such that each current of the set of currents is one of sourced to the PTAT circuit and sank from the PTAT circuit. Further, the PTAT circuit is configured to receive at least one of the supply voltage and the control voltage, and generate a set of reference voltages. The control voltage is generated based on the set of reference voltages and the supply voltage.

A low-power CMOS reference voltage generating with enhanced power supply rejection ratio (PSRR) and fast start-up time is disclosed. The reference voltage generating is generated by the stacked diode-connected MOS transistors (SDMT) architecture to reduce the dependence on process, voltage and temperature. The self-biased and capacitor coupled architecture can shorten the start-up time without increasing power consumption and improve the bandwidth of the power supply rejection ratio. This design is implemented using a CMOS process, which can achieve stabilization time of 0.2 ms. Under the same power consumption, this design is 274 times better than a design without a start-up time enhancement. The power supply rejection ratio measured at 100 Hz is −73.5 dB. In the temperature range of −40 to 130° C., the average temperature coefficient is 62 ppm/° C.

An electronic device including: a reference voltage generator circuit to generate a reference voltage based on a first and second voltage, the reference voltage generator circuit including: a first current source to supply a first current to each of a first and second node; an amplifier to amplify a difference between the first voltage of the first node and the second voltage of the second node and to output a difference voltage corresponding to the amplified difference; a first bipolar junction transistor (BJT) connected to the first node; a first resistor connected to the second node; a second BJT connected between the first resistor and ground; a second resistor connected between the second node and ground; and a first transistor to be supplied with a second current from the first current source; and an adaptive cascode circuit to generate a bias voltage applied to a gate of the first transistor.

A bandgap reference circuit includes a first current generator having first and second bipolar transistors for generating a first current that varies proportionally as a function of temperature. A second current generator includes a field effect transistor for generating a second current that varies inversely as a function of temperature. A trimming circuit includes a third bipolar transistor sized to match the first bipolar transistor, a third current generator having a second field effect transistor coupled to a collector and base of the third bipolar transistor to generate a third current based on a base current of the third bipolar transistor, and a trim control circuit configured to modify the second current by adding the third current to or subtracting the third current from the second current based on a trim control signal. A bandgap reference current is generated by summing the first current and the modified second current.

A signal generating device including a first circuit coupled between a first reference voltage and a second reference voltage and arranged to generate a first current to a first BJT; a first control circuit connected to the first BJT and arranged to adjust the first current. The first circuit outputs a part of a temperature-dependent signal on an output terminal, and includes: a first active device having a first and a second connecting terminal coupled to the first BJT; a second active device having a first connecting terminal coupled to the first BJT, and a second connecting terminal coupled to a second reference voltage; a first amplifier having an input terminal coupled to the first BJT, and an output terminal coupled to the control terminal of the first active device; and a second control circuit coupled to the first circuit for controlling the temperature-dependent signal according to the first current.

A bandgap reference (BGR) circuit is provided. The BGR circuit includes a first node, a second node, and a third node. A first resistive element is connected between the second node and the third node. The BGR circuit is operative to provide a reference voltage as an output. The BGR circuit further includes a current shunt path connected between the first node and the third node, the current shunt path being operable to regulate a voltage drop across the first resistive element.

A reference voltage generating circuit includes: an operational amplifier including a first input terminal connected to a first node and a second input terminal connected to a second node; a first transistor connected between a ground terminal and the first node, wherein a first current flows in the first transistor; a second transistor connected to the ground terminal; and a first variable resistor connected between the second transistor and the second node, wherein the first variable resistor has a first resistance value for adjusting the first current, based on a change in a current characteristic of the first transistor caused by a variation in a process of forming the first transistor. The reference voltage generating circuit provides a reference voltage, based on a voltage of the first node and a voltage across the first variable resistor.