G11B5/3948

Non-local spin valve sensor for high linear density
11282538 · 2022-03-22 · ·

A non-local spin valve (NLSV) sensor includes a bearing surface and a detector located proximate to the bearing surface. The NLSV sensor also includes a channel layer located behind the detector relative to the bearing surface, and in a substantially same plane as the detector. The channel layer has a front end that is proximate to the detector and a rear end that is distal to the detector. The NLSV sensor further includes first and second spin injectors, with the first spin injector located proximate to the rear end of the channel layer and positioned above the channel layer, and the second spin injector located proximate the rear end of the channel layer and positioned below the channel layer.

Shielding between heads for tape drive

Embodiments of the present disclosure generally relate to tape drives used for magnetic recording on tapes. Tape drives use tape heads that comprise a read head, a write head, and an additional head that may be a write head or a read head. The tape head is fabricated over a common substrate with the first head being formed first, followed by a shield layer, followed by the second head, followed by another shield layer, and finally followed by the third head. Fabricating the tape head over a common substrate is cost effective. The tape head can be wired such that fewer parallel connections between the heads and bond pads are present. As such, cross-talk between the wires and noise is reduced.

Tunnel magnetoresistive sensor having conductive ceramic layers

An apparatus, according to one embodiment, includes a sensor having an active region, a magnetic shield adjacent the active region, a spacer between the active region and the magnetic shield, a second magnetic shield on an opposite side of the active region as the magnetic shield, and a second spacer between the active region and the second magnetic shield. Both spacers include an electrically conductive ceramic layer. The sensor is an electronic lapping guide.

Tunnel magnetoresistive sensor with adjacent gap having chromium alloy seed layer and refractory material layer

In one general approach, an apparatus includes a sensor having an active tunnel magnetoresistive region, magnetic shields flanking the active tunnel magnetoresistive region, and gaps between the active tunnel magnetoresistive region and the magnetic shields. The active tunnel magnetoresistive region includes a free layer, a tunnel barrier layer and a reference layer. At least one of the gaps includes a seed layer of a chromium alloy and an electrically conductive layer having a refractory material formed on the seed layer. The seed layer in this configuration is more resistant to corrosion than elemental chromium when used in a magnetic recording head and/or in a structure exposed to even trace amounts of fluorine.

Magnetic Sensor with Serial Resistor for Asymmetric Sensing Field Range

The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.

Magnetic detection device and method for manufacturing the same
10908233 · 2021-02-02 · ·

A Z detection unit includes magnetoresistive elements provided on inclined side surfaces of Z detection recesses. An X detection unit includes magnetoresistive elements provided on inclined side surfaces of X detection recesses. A Y detection unit includes magnetoresistive elements provided on inclined side surfaces of Y detection recesses. Directions of fixed magnetization of fixed magnetic layers included in the magnetoresistive elements are set to directions shown by arrows with solid lines.

Non-local spin valve sensor for high linear density
11862208 · 2024-01-02 · ·

A non-local spin valve (NLSV) sensor includes a bearing surface and a detector located proximate to the bearing surface. The NLSV sensor also includes a channel layer located behind the detector relative to the bearing surface, and in a substantially same plane as the detector. The channel layer has a front end that is proximate to the detector and a rear end that is distal to the detector. The NLSV sensor further includes first and second spin injectors, with the first spin injector located proximate to the rear end of the channel layer and positioned above the channel layer, and the second spin injector located proximate the rear end of the channel layer and positioned below the channel layer.

Shorting tolerant tunnel valve head and circuit

An apparatus according to one embodiment includes a magnetic head having at least two tunneling magnetoresistance sensors, where a resistance of a tunnel barrier of each of the tunneling magnetoresistance sensors of the magnetic head is about 25 ohms or less, a drive mechanism for passing a magnetic medium over the magnetic head, and a controller electrically coupled to the magnetic head. In addition, the controller includes a biasing circuit, where the biasing circuit restricts a maximum voltage drop across the tunnel barrier.

Apparatus with data reader sensors more recessed than servo reader sensor

An apparatus according to one approach includes a servo reader transducer structure on a module. The servo reader transducer structure has a lower shield, an upper shield above the lower shield, the upper and lower shields providing magnetic shielding, a current-perpendicular-to-plane sensor between the upper and lower shields, an electrical lead layer between the sensor and one of the shields, and a spacer layer between the electrical lead layer and the one of the shields. The electrical lead layer is in electrical communication with the sensor. The conductivity of the electrical lead layer is higher than the conductivity of the spacer layer. An array of writers is also present on the module. Writer modules having this structure are less susceptible to shorting, and therefore enable use of TMR servo readers on writer modules.

Two-dimensional magnetic recording (TDMR) read head structure with different stacked sensors and disk drive incorporating the structure

A hybrid read head structure for two-dimensional magnetic recording (TDMR) in a disk drive has two stacked current-perpendicular-to-the plane magnetoresistive (CPP-MR) read heads or sensors substantially aligned with one another in the along-the track direction to enable both sensors to read data from the same data track. The structure is a hybrid structure formed on the disk drive slider with the lower sensor being a dual free layer (DFL) or scissoring type of CPP-MR sensor and the upper sensor being a single free layer (SFL) type of CPP-MR sensor.