An apparatus according to one embodiment includes a magnetic head having multiple magnetic transducers, the transducers including read sensors. The read sensors are of at least two differing types selected from a group consisting of tunneling magnetoresistance (TMR), giant magnetoresistance (GMR), anisotropic magnetoresistance (AMR), and inductive sensors.

Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.

A system according to one embodiment includes a magnetic head having a plurality of sensors arranged to simultaneously read at least three immediately adjacent data tracks on a magnetic medium, wherein none of the sensors share more than one lead with any other of the sensors. Such embodiment may be implemented in a magnetic data storage system such as a disk drive system, which may include a magnetic head, a drive mechanism for passing a magnetic medium (e.g., hard disk) over the magnetic head, and a controller electrically coupled to the magnetic head.

A magneto-resistive (MR) device and process for making the MR device are disclosed. The MR device has a pinned layer, a spacer layer proximate to the pinned layer, and a free layer proximate to the spacer layer. The free layer comprises a first magnetic layer proximate to the spacer layer, the first magnetic layer having a positive magnetostriction, a laminate magnetic insertion layer proximate to the first magnetic layer, and a second magnetic layer proximate to the magnetic insertion layer, the second magnetic layer having a negative magnetostriction. The laminate magnetic insertion layer has a first magnetic sublayer and a first non-magnetic sublayer proximate to the first magnetic sublayer. With the disclosed laminate magnetic insertion layer, the free layer has a low overall magnetostriction and results in a MR device with a high MR ratio.

A method and system provide a magnetic transducer having an air-bearing surface (ABS). The method includes providing a first shield, a first read sensor, an antiferromagnetically coupled (AFC) shield that includes an antiferromagnet, a second read sensor and a second shield. The read sensors are between the first and second shields. The AFC shield is between the read sensors. An optional anneal for the first shield is in a magnetic field at a first angle from the ABS. Anneals for the first and second read sensors are in magnetic fields in desired first and second read sensor bias directions. The AFC shield anneal is in a magnetic field at a third angle from the ABS. The second shield anneal is in a magnetic field at a fifth angle from the ABS. The fifth angle is selected based on a thickness and a desired AFC shield bias direction for the antiferromagnet.

A method and system provide a magnetic transducer having an air-bearing surface (ABS). The method includes providing a first shield, a first read sensor, an antiferromagnetically coupled (AFC) shield that includes an antiferromagnet, a second read sensor and a second shield. The read sensors are between the first and second shields. The AFC shield is between the read sensors. An optional anneal for the first shield is in a magnetic field at a first angle from the ABS. Anneals for the first and second read sensors are in magnetic fields in desired first and second read sensor bias directions. The AFC shield anneal is in a magnetic field at a third angle from the ABS. The second shield anneal is in a magnetic field at a fifth angle from the ABS. The fifth angle is selected based on a thickness and a desired AFC shield bias direction for the antiferromagnet.

An apparatus according to one embodiment includes a transducer structure having: a lower shield having recesses in an upper surface thereof; an upper shield formed above the lower shield; a sensor between the upper and lower shields, the recesses being positioned on opposite sides of the sensor; and a first insulating layer in the recesses in the upper surface of the lower shield. An upper surface of the first insulating layer is coplanar with an uppermost portion of the upper surface of the lower shield. An apparatus according to another embodiment includes a transducer structure having: a lower shield having recesses in an upper surface thereof; an upper shield formed above the lower shield, the upper shield having recesses in a lower surface thereof; a sensor between the shields, the recesses being positioned on opposite sides of the sensor; and insulating layers in the recesses in the shields.

A lateral spin valve reader includes a channel layer having a first end that is proximate to a bearing surface and a second end that is away from the bearing surface. The lateral spin valve reader also includes a detector structure disposed over an upper surface of a first portion of the channel layer that is proximate to the first end of the channel layer. A spin injection structure disposed below a lower surface of a second portion of the channel layer is proximate to the second end of the channel layer. An area of overlap between the spin injection structure and the second portion of the channel layer is substantially larger than an area of overlap between the detector structure and the first portion of the channel layer.

In accordance with one embodiment, a multi-reader can be manufactured so as to be able to read from multiple regions of a storage device contemporaneously during operation. Such a device can be configured, for example, by forming a first wall; forming a second wall; and utilizing the first wall and the second wall to form two adjacent reader stacks.

Embodiments of the present invention provide methods, systems, and computer program products for compensating for loss of current through shorted tunneling magnetoresistance (TMR) sensors. In one embodiment, for a magnetic head having multiple TMR read sensors, a first voltage limit is set for most parts and a second voltage limit is set for all of the parts. A number of TMR read sensors which are allowed to function between the first and the second voltage limits is determined using a probability algorithm, which determines the probability that the application of the second voltage limit will result in a dielectric breakdown within an expected lifetime of a drive is below a threshold value. For the number of TMR read sensors which are allowed to function at voltages between the first and second voltage limits, a determined subset of those sensors are then allowed to function at the second voltage limit.