An integrated circuit includes a physical layer interface having a control timing domain and a data timing domain, and circuits that enable the control timing domain during a change in power conservation mode in response to a first event, and that enable the data timing domain in response to a second event. The control timing domain can include interface circuits coupled to a command and address path, and the data timing domain can include interface circuits coupled to a data path.

Structures including non-volatile memory elements and methods of forming such structures. The structure includes a first non-volatile memory element, a second non-volatile memory element, and temperature sensing electronics coupled to the first non-volatile memory element and the second non-volatile memory element.

Structures including non-volatile memory elements and methods of forming such structures. The structure includes a first non-volatile memory element, a second non-volatile memory element, and temperature sensing electronics coupled to the first non-volatile memory element and the second non-volatile memory element.

Methods, systems, and devices supporting an interface for refreshing non-volatile memory are described. In some examples, a host system may communicate with a memory system, where both the host system and the memory system may be included within a vehicle (e.g., an automotive system). The host system may receive an indication that the vehicle is powering down (e.g., shutting off an engine or lowering power output from a battery). The host system may switch from a first mode corresponding to a first power usage to a second mode corresponding to a second, lower power usage in response to the vehicle powering down, the second mode supporting initiation of a refresh operation at the memory device. The host system may transmit a refresh command to the memory system to refresh non-volatile memory while the vehicle is powered down if the host system is operating in the second mode of operation.

Methods, systems, and devices supporting an interface for refreshing non-volatile memory are described. In some examples, a host system may communicate with a memory system, where both the host system and the memory system may be included within a vehicle (e.g., an automotive system). The host system may receive an indication that the vehicle is powering down (e.g., shutting off an engine or lowering power output from a battery). The host system may switch from a first mode corresponding to a first power usage to a second mode corresponding to a second, lower power usage in response to the vehicle powering down, the second mode supporting initiation of a refresh operation at the memory device. The host system may transmit a refresh command to the memory system to refresh non-volatile memory while the vehicle is powered down if the host system is operating in the second mode of operation.

A semiconductor device that can automatically transition from a standby mode to a deep power down (DPD) mode is provided. The semiconductor device includes a DPD controller supporting the DPD mode and multiple internal circuits. The DPD controller measures a time since a time point of entering the standby mode and generates multiple power down enable signals for further reducing power consumption in the standby mode in response to elapse of a measurement time, so that operations of the multiple internal circuits are stopped in stages.

A semiconductor device that can automatically transition from a standby mode to a deep power down (DPD) mode is provided. The semiconductor device includes a DPD controller supporting the DPD mode and multiple internal circuits. The DPD controller measures a time since a time point of entering the standby mode and generates multiple power down enable signals for further reducing power consumption in the standby mode in response to elapse of a measurement time, so that operations of the multiple internal circuits are stopped in stages.

The present disclosure provides a defect inspecting method and a defect inspecting system configured to inspect a memory device. The defect inspecting method includes the operations of: resetting the memory device from a power on state; initializing the memory device; performing a plurality of write operations to a memory cell array of the memory device according to a test pattern; performing a plurality of read operations to the memory cell array of the memory cell to generate a readout pattern; and determining whether a defect existed in the memory device according to the readout pattern.

The present disclosure provides a defect inspecting method and a defect inspecting system configured to inspect a memory device. The defect inspecting method includes the operations of: resetting the memory device from a power on state; initializing the memory device; performing a plurality of write operations to a memory cell array of the memory device according to a test pattern; performing a plurality of read operations to the memory cell array of the memory cell to generate a readout pattern; and determining whether a defect existed in the memory device according to the readout pattern.

Various implementations described herein are directed to a method. The method may receive an address to access data stored in memory. The method may enable a data access pipeline to perform memory access operations so as to access the data stored in the memory based on the address. The method may dynamically adjust the data access pipeline during the memory access operations so as to output the data based on the address.