An apparatus including a temperature dependent circuit is configured to receive a temperature dependent power supply voltage, and further is configured to receive a first input signal and provide a temperature dependent output signal responsive to the input signal. A power control circuit including the temperature dependent circuit is configured to receive a second input signal, and further configured provide a first control voltage based on the first temperature dependent output signal and provide a second control voltage based on the second input signal. The second control voltage has a temperature dependency based on the temperature dependent power supply voltage. A sense amplifier coupled to a pair of digit lines is configured to receive the first and second control voltages and amplify a voltage difference between the digit lines of the pair.

Methods, systems, and devices for vertical transistor fuse latches are described. An apparatus may include a substrate and a memory array that is coupled with the substrate. The apparatus may also include a latch that is configured to store information from a fuse for the memory array. The latch may be at least partially within an additional substrate separate from and above the substrate. The latch may include a quantity of p-type vertical transistors and a quantity of n-type vertical transistors each at least partially disposed within the additional substrate above the substrate.

A memory device includes a voltage generator configured to generate a reference voltage for transmission to at least one component of the memory device. The voltage generator includes a first input to receive a first signal having a first voltage value. The voltage generator also includes a second input to receive a second signal having a second voltage value. The voltage generator further includes a first circuit configured to generate third voltage and a second circuit coupled to the first circuit to receive the third voltage value, wherein the second circuit receives the first signal and the second signal and is configured to utilize the third voltage value to facilitate comparison of the first voltage value and the second voltage value to generate an output voltage.

A memory device includes a voltage generator configured to generate a reference voltage for transmission to at least one component of the memory device. The voltage generator includes a first input to receive a first signal having a first voltage value. The voltage generator also includes a second input to receive a second signal having a second voltage value. The voltage generator further includes a first circuit configured to generate third voltage and a second circuit coupled to the first circuit to receive the third voltage value, wherein the second circuit receives the first signal and the second signal and is configured to utilize the third voltage value to facilitate comparison of the first voltage value and the second voltage value to generate an output voltage.

The present disclosure includes apparatuses and methods related to bank coordination in a memory device. A number of embodiments include a method comprising concurrently performing a memory operation by a threshold number of memory regions, and executing a command to cause a budget area to perform a power budget operation associated with the memory operation.

The present disclosure includes apparatuses and methods related to bank coordination in a memory device. A number of embodiments include a method comprising concurrently performing a memory operation by a threshold number of memory regions, and executing a command to cause a budget area to perform a power budget operation associated with the memory operation.

A memory system includes: a first nonvolatile memory; a second volatile memory; a controller; a power control circuit configured to perform control such that a first voltage is applied to the first memory, the second memory, and the controller based on first power supplied from an external power supply; and a power storage device configured to supply second power to the power control circuit while the first power from the external power supply is interrupted. While the first power supplied from outside is interrupted, the power control circuit applies a second voltage based on the second power supplied from the power storage device to the first memory, the second memory, and the controller. The power control circuit stops the application of the second voltage to the second memory after the data is read from the second memory and before the data is written into the first memory.

A memory system includes: a first nonvolatile memory; a second volatile memory; a controller; a power control circuit configured to perform control such that a first voltage is applied to the first memory, the second memory, and the controller based on first power supplied from an external power supply; and a power storage device configured to supply second power to the power control circuit while the first power from the external power supply is interrupted. While the first power supplied from outside is interrupted, the power control circuit applies a second voltage based on the second power supplied from the power storage device to the first memory, the second memory, and the controller. The power control circuit stops the application of the second voltage to the second memory after the data is read from the second memory and before the data is written into the first memory.

Disclosed is a low dropout regulator which includes a first resistor, a first transistor including a gate terminal connected with a first end of the first resistor, a source terminal connected with a power supply voltage terminal, and a drain terminal connected with a first node, an operational amplifier including input terminals respectively connected with a reference voltage and the first node and an output terminal, a second transistor including a gate terminal connected with the output terminal of the operational amplifier, a source terminal connected with the first node, and a drain terminal connected with a second node, a third transistor including a gate terminal connected with a second end of the first resistor, a source terminal connected with the power supply voltage terminal, and a drain terminal connected with a third node, and a current source connected between the second node and a ground voltage terminal.

Disclosed is a low dropout regulator which includes a first resistor, a first transistor including a gate terminal connected with a first end of the first resistor, a source terminal connected with a power supply voltage terminal, and a drain terminal connected with a first node, an operational amplifier including input terminals respectively connected with a reference voltage and the first node and an output terminal, a second transistor including a gate terminal connected with the output terminal of the operational amplifier, a source terminal connected with the first node, and a drain terminal connected with a second node, a third transistor including a gate terminal connected with a second end of the first resistor, a source terminal connected with the power supply voltage terminal, and a drain terminal connected with a third node, and a current source connected between the second node and a ground voltage terminal.