A semiconductor memory includes a main memory area and a tag memory area. A plurality of memory groups are set in the main memory area and a plurality of flag bits are set in the tag memory area. Each of the plurality of memory groups has a corresponding relationship with one of the plurality of flag bit. The flag bit is at least configured to indicate whether at least one memory cell in the memory group has a specific state. The specific state includes an occupied state.

A memory device includes a plurality of word lines elongated along a first direction, and at least one memory unit. The at least one memory unit includes a plurality of memory cells, at least one bit line, and at least one column word line. The plurality of memory cells are arranged along a second direction different from the first direction. The at least one bit line is elongated along the second direction, and configured to transmit data of a selected memory cell. The at least one column word line is elongated along the second direction, and configured to control electrical connections between the memory cells and the at least one bit line, wherein the selected memory cell is selected by a corresponding word line and the at least one column word line.

The present disclosure includes apparatuses and methods related to an artificial intelligence accelerator in memory. An example apparatus can include a number of registers configured to enable the apparatus to operate in an artificial intelligence mode to perform artificial intelligence operations and an artificial intelligence (AI) accelerator configured to perform the artificial intelligence operations using the data stored in the number of memory arrays. The AI accelerator can include hardware, software, and or firmware that is configured to perform operations associated with AI operations. The hardware can include circuitry configured as an adder and/or multiplier to perform operations, such as logic operations, associated with AI operations.

The application relates to an architecture that allows for less precision of demarcation read voltages by combining two physical memory cells into a single logical bit. Reciprocal binary values may be written into the two memory cells that make up a memory pair. When activated using bias circuitry and address decoders the memory cell pair creates current paths having currents that may be compared to detect a differential signal. The application is also directed to writing and reading memory cell pairs.

A memory device coupled to a memory controller and including a memory array and an access circuit is provided. The memory array includes a plurality of cells. Each of the cells is coupled to a word-line. The access circuit is coupled between the memory controller and the memory array. In a normal mode, the access circuit executes a refresh action for the cells which are coupled to at least one word-line in response to the memory controller outputting an auto-refresh command. In a standby mode, the access circuit selects one of the word-lines and determines whether to execute the refresh action for the cells coupled to the selected word-line according to the retention capability of the selected word-line at regular time intervals.

Embodiments of the present disclosure relate to a semiconductor structure and a manufacturing method thereof, a data storage device and a data read-write device. The semiconductor structure includes: a substrate, a plurality of active regions separated from each other being formed in the substrate; a trench, located in the active region; a first gate structure, located in the trench, and configured to be applied with a first applied voltage; a second gate structure, located in the trench, and located above the first gate structure, and configured to be applied with a second applied voltage, the second applied voltage being greater than the first applied voltage; and an insulating isolation layer, located in the trench, and located between the first gate structure and the second gate structure.

An electronic device includes a count signal generation circuit configured to increase one of the values of a weak cell count signal and an active count signal by comparing a weak cell address with an adjacent address generated from a row address, when an active operation is performed. The electronic device also includes a target refresh control circuit configured to latch the adjacent address based on the values of the weak cell count signal and the active count signal and to output the latched adjacent address as a target address for a refresh operation based on a target refresh signal.

Methods, systems, and devices for managing memory based on access duration are described. A memory device may include a first set of memory cells resilient against access durations of a first duration and a second set of memory cells resilient against access durations of a shorter duration. A command for accessing the memory device may be received. The command may be associated with an access duration. Whether to access, as part of executing the command, the first set of memory cells or the second set of memory cells may be determined based on the access duration. The first set of memory cells may be accessed, as part of executing the command, based on the access duration being greater than a threshold duration. Or the second set of memory cells may be accessed based on the access duration being less than or equal to the threshold duration.

Methods, systems, and devices for managing memory based on access duration are described. A memory device may include a first set of memory cells resilient against access durations of a first duration and a second set of memory cells resilient against access durations of a shorter duration. A command for accessing the memory device may be received. The command may be associated with an access duration. Whether to access, as part of executing the command, the first set of memory cells or the second set of memory cells may be determined based on the access duration. The first set of memory cells may be accessed, as part of executing the command, based on the access duration being greater than a threshold duration. Or the second set of memory cells may be accessed based on the access duration being less than or equal to the threshold duration.

A static random-access memory (SRAM) circuit and associated read operation method and write operation method are provided. The SRAM circuit includes memory units arranged in M columns and N rows, M bit lines, N row-voltage selection lines, N word lines, and a control circuit. The control circuit includes a controller, a voltage source, a voltage selection module, a word-line driving module, and a bit-line driving module. The voltage source provides a first voltage and a second voltage. When the control circuit performs access to the memory unit located in the mth column and the nth row, the voltage selection module transmits one of the first voltage and the second voltage to an nth row-voltage selection line. The voltage selection module transmits the second voltage to the other (N-1) row-voltage selection lines. The variables M, N, m, and n are positive integers.