A ring resonator device includes a passive optical cavity having a circuitous configuration into which is built a photodetector device. The photodetector device includes a first implant region formed within the passive optical cavity that includes a first type of implanted doping material. The photodetector device includes a second implant region formed within the passive optical cavity that includes a second type of implanted doping material, where the second type of implanted doping material is different than the first type of implanted doping material. The photodetector device includes an intrinsic absorption region present within the passive optical cavity between the first implant region and the second implant region. A first electrical contact is electrically connected to the first implant region and to a detecting circuit. A second electrical contact is electrically connected to the second implant region and to the detecting circuit.

Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

A photonics transceiver is described herein, wherein the photonics transceiver exhibits improved areal bandwidth density and improved energy per bit consumption relative to conventional photonics transceivers. The photonics transceiver achieves an areal bandwidth density of at least 5 Tbps/mm.sup.2 with an energy consumption of less than 500 fJ/bit (sum of energy consumed for both a transmitted bit and a received bit). The photonics transceiver is a multi-chip module, where chips in the multi-chip module are tightly integrated with one another. The multi-chip module includes light source, photodetector, photonics, and control/logic chips. The photonics chip includes transparent conducting oxide integrated optical modulators and multiplexers and demultiplexers based on MEMS-tunable optical ring resonators.

A photonic system includes a passive optical cavity and an optical waveguide. The passive optical cavity has a preferred radial mode for light propagation within the passive optical cavity. The preferred radial mode has a unique light propagation constant within the passive optical cavity. The optical waveguide is configured to extend past the passive optical cavity such that at least some light propagating through the optical waveguide will evanescently couple into the passive optical cavity. The passive optical cavity and the optical waveguide are collectively configured such that a light propagation constant of the optical waveguide substantially matches the unique light propagation constant of the preferred radial mode within the passive optical cavity.

The photonic neuron nodes of the three-dimensional photonic artificial intelligence networks of the present invention constructed of cone optical fibers and spiral optical fibers are extremely small, occupying an area of less than 15 .Math.m x 15 .Math.m / 2.5 .Math.m, therefore for example a 40 mm x 40 mm/ 25 mm optical array can accommodate up to seventy billion neurons. The energy consumption of the invention, which the inventors called an INFROTON-type artificial neuron network is extremely low due to its the small size and the use of passive optical elements.

Disclosed are systems and methods that utilize multicore optical fibers for gyro coil winding. Particularly, the use of multicore fiber enables inherent thermal stability without the need for complex, tedious, and costly winding patterns. Enabling the use of level winding techniques eliminates the need for complex quadrupole winding patterns. This simplicity lends itself to advancements towards full automation of winding coils for multicore fibers, without sacrificing performance. This, in turn increases the production rate and overcomes current barriers to fiber optic gyroscope (FOG) market expansion. In accordance with the embodiments, multicore fiber can be utilized in various gyro coil winding techniques, including: level winding; Interrupted Level Wind (ILW); and Dual Axis Symmetric (DAS) winding. Furthermore, each of the multicore fiber gyro coil winding patterns can incorporate a multicore shuffle bridge. The multicore shuffle bridge is designed to provide multiple features, such as facilitating the rotation of mating cores.

A ring resonator electro-optical device includes a first silicon nitride waveguide and a second annular silicon waveguide that comprises a first section running under a second section of the first waveguide. The second waveguide also includes an annular silicon strip having a cross-section increasing in the first section from a minimum cross-section located under the second section.

Embodiments disclosed herein include an on-cavity photonic integrated circuit (OCPIC). In an embodiment, the OCPIC comprises a laser transmitter, that comprises a row with four bumps, and a micro-ring resonator (MRR) in the row between a first bump and a second bump of the four bumps. In an embodiment, a cavity is below the MRR, where a diameter of the cavity is substantially equal to a spacing between the first bump and the second bump.

Embodiments disclosed herein include optoelectronic systems and methods of forming such systems. In an embodiment, an optoelectronic system comprises a first substrate, a second substrate over the first substrate, a micro-ring resonator (MRR) over the second substrate, a heater integrated into the MRR, a cladding over the MRR, an opening through the first substrate and the second substrate to expose a bottom surface of the MRR, and a base spanning across the opening.

A ring resonator device includes a passive optical cavity having a circuitous configuration into which is built a photodetector device. The photodetector device includes a first implant region formed within the passive optical cavity that includes a first type of implanted doping material. The photodetector device includes a second implant region formed within the passive optical cavity that includes a second type of implanted doping material, where the second type of implanted doping material is different than the first type of implanted doping material. The photodetector device includes an intrinsic absorption region present within the passive optical cavity between the first implant region and the second implant region. A first electrical contact is electrically connected to the first implant region and to a detecting circuit. A second electrical contact is electrically connected to the second implant region and to the detecting circuit.