A temperature sensor circuit has a reference voltage generator that is trimmable at two temperatures for increased accuracy. The reference voltage generation section generates a reference voltage, the level of which is trimmable. A voltage divider section is connected to receive the reference voltage from the reference voltage generation section and generate a plurality of comparison voltage levels determined by the reference voltage and a trimmable resistance. An analog-to-digital converter can then be connected to a temperature dependent voltage section to receive the temperature dependent output voltage, such as a proportional to absolute temperature type (PTAT) behavior, and connected to the voltage divider section to receive the comparison voltage levels. The analog to digital converter generates an output indicative of the temperature based upon a comparison of the temperature dependent output voltage to the comparison voltage levels.

A temperature dependent correction circuit includes a first supply source, a second supply source, a rectifying circuit, and a reference. The first supply source is configured to supply a first signal that varies with temperature along a first constant or continuously variable slope. The second supply source is configured to supply a second signal that varies with temperature along a second constant or continuously variable slope. The rectifying circuit is configured to receive the first and second signal, rectify the first signal to produce a first rectified signal, and add the first rectified signal to the second signal to produce a correction signal. The reference is configured to receive the correction signal.

A current reference circuit and a semiconductor IC including the current reference circuit, the current reference circuit including a proportional to absolute temperature (PTAT) current generator configured to generate, in an output branch, a first current proportional to a temperature; and a current subtractor configured to generate a reference current by subtracting a second current generated based on a current flowing in an internal branch of the PTAT current generator, from the first current flowing in the output branch. The second current is set to have a same temperature-based change characteristic as the first current and a level different from a level of the first current.

A circuit for biasing non-volatile memory cells includes a dummy decoding path between a global bias line and a biasing node, a reference current generator coupled to the dummy decoding path and configured to supply a reference current, a biasing stage configured to set a cell bias voltage on the biasing node, and a compensation stage configured to compensate a current absorption of the biasing stage at the biasing node so that the reference current will flow through the dummy decoding path.

A temperature dependent correction circuit includes a first supply source, a second supply source, a rectifying circuit, and a reference. The first supply source is configured to supply a first signal that varies with temperature along a first constant or continuously variable slope. The second supply source is configured to supply a second signal that varies with temperature along a second constant or continuously variable slope. The rectifying circuit is configured to receive the first and second signal, rectify the first signal to produce a first rectified signal, and add the first rectified signal to the second signal to produce a correction signal. The reference is configured to receive the correction signal.

Systems and methods are provided for generating a stable reference current that has low sensitivity to operating temperature and supply voltage variations and is stable across process corners. In an example implementation, an improved reference current generator circuit is provided that includes a first circuit generating a first current that is proportional to absolute temperature and a second circuit generating a second current that is complementary to absolute temperature based on first transistors operating in respective triode regions. The second current compensates for process, voltage, and temperature variations in the first current at a node. According to some examples, the second current is also generated based on second transistors operating in respective saturation regions. The first current may be generated using a forward biased PN junction diode.

A constant-g.sub.m current source, arranged to generate a supply current for a Pierce oscillator. First and second transistors have source terminals connected to first and second supply rails, respectively, and drain terminals connected together and to the gate terminal of the first transistor. Third and fourth transistors have source terminals connected to the first and second supply rails, respectively, and drain terminals are connected together and to the gate terminal of the fourth transistor. An output portion varies the supply current in response to a voltage at the drain terminals of the third and fourth transistors. The gate terminals of the first and third transistors are connected together, and the gate terminals of the second and fourth transistors are connected together. An auto-calibration transistor has its source terminal connected to the first supply rail and its drain terminal connected to the source terminal of the first transistor.

A voltage generation circuit may include: a current providing block configured to provide, to an output node, a current corresponding to a voltage level of a set voltage, and a voltage level control block configured to adjust the resistance value thereof in response to a voltage control signal, wherein the voltage level control block is coupled between the output node and a ground terminal, and wherein the voltage level control block comprises a first current path unit and a second current path unit having different temperature characteristics.

A semiconductor device includes: an integrated circuit (IC) including an internal circuit; and a mismatch detection and correction circuit connected to the internal circuit of the IC, the mismatch detection and correction circuit configured to detect a process mismatch and correct an error in the internal circuit caused by the process mismatch using a current difference between a first current and a second current based on a charged voltage of a capacitor.

A reference generation circuit includes a proportional-to-absolute temperature (PTAT) current branch having a pair of diodes and a complementary-to-absolute temperature (CTAT) current branch having a pair of resistors. A first bank of diode-connected transistors is positioned in the PTAT branch and a second bank of diode-connected transistors is positioned in the CTAT branch. Diode-connected transistors of the first and second banks of transistors are selectable to tune a gate-source voltage of each of the first and second banks of diode-connected transistors.