The present disclosure relates to an amplifier circuit, a control method, and a memory, including: a sensing amplification circuit, including a readout node, a complementary readout node, a first node, and a second node; an isolation circuit, coupled to the readout node, the complementary readout node, a bit line, and a complementary bit line, wherein the isolation circuit is configured to couple the readout node to the bit line and the complementary readout node to the complementary bit line at a sensing amplification stage; an offset cancellation circuit, coupled to the bit line, the complementary bit line, the readout node, and the complementary readout node, wherein the offset cancellation circuit is configured to couple the bit line to the complementary readout node and the complementary bit line to the readout node at an offset cancellation stage; and a processing circuit, coupled to the offset cancellation circuit.

The present disclosure relates to an amplifier circuit, a control method, and a memory, including: a sensing amplification circuit, including a readout node, a complementary readout node, a first node, and a second node; an isolation circuit, coupled to the readout node, the complementary readout node, a bit line, and a complementary bit line, wherein the isolation circuit is configured to couple the readout node to the bit line and the complementary readout node to the complementary bit line at a sensing amplification stage; an offset cancellation circuit, coupled to the bit line, the complementary bit line, the readout node, and the complementary readout node, wherein the offset cancellation circuit is configured to couple the bit line to the complementary readout node and the complementary bit line to the readout node at an offset cancellation stage; and a processing circuit, coupled to the offset cancellation circuit.

Local input/output (LIO) lines may be used for precharging and equalizing the digit lines associated with a sense amplifier. The precharge device and equalization device of the associated sense amplifier may be omitted in some examples. In some examples, an equalization device may short the lines of a LIO line pair together. The LIO line pair may drive one or more pairs of digit lines to a precharge potential. Digit lines may be connected to the LIO line pair and driven to a midpoint potential in some examples.

Local input/output (LIO) lines may be used for precharging and equalizing the digit lines associated with a sense amplifier. The precharge device and equalization device of the associated sense amplifier may be omitted in some examples. In some examples, an equalization device may short the lines of a LIO line pair together. The LIO line pair may drive one or more pairs of digit lines to a precharge potential. Digit lines may be connected to the LIO line pair and driven to a midpoint potential in some examples.

An amplification circuit includes: a sense amplification circuit including a read node, a complementary read node, a first node and a second node; an isolation circuit, which couples the read node to a bit line and couples the complementary read node to a complementary bit line in a sense amplification stage; an offset cancellation circuit, which couples the bit line to the complementary read node and couple the complementary bit line to read node in an offset cancellation stage; and a first power supply circuit, coupled to the first node, including a first power supply and a second power supply, a power supply voltage of the first power supply being higher than that of the second power supply, the first power supply circuit couples the first power supply to the first node in offset cancellation stage, and couples the second power supply to the first node in sense amplification stage.

An amplification circuit includes: a sense amplification circuit including a read node, a complementary read node, a first node and a second node; an isolation circuit, which couples the read node to a bit line and couples the complementary read node to a complementary bit line in a sense amplification stage; an offset cancellation circuit, which couples the bit line to the complementary read node and couple the complementary bit line to read node in an offset cancellation stage; and a first power supply circuit, coupled to the first node, including a first power supply and a second power supply, a power supply voltage of the first power supply being higher than that of the second power supply, the first power supply circuit couples the first power supply to the first node in offset cancellation stage, and couples the second power supply to the first node in sense amplification stage.

An amplification circuit includes a sense amplification circuit, including a read node SABL, a complementary read node SABLB, a first node PCS, and a second node NCS; an isolation circuit, coupled to the SABL, the SABLB, a hit line BL, and a complementary hit line BLB, configured to: in a sense amplification stage, couple the SABL to the BL and couple the BLB to the SABLB; an offset cancellation circuit, coupled to the BL, the BLB, the SABL, and the SABLB, configured to: in an offset cancellation stage, couple the BL to the SABLB and couple the BLB to the SABL; and a first power supply circuit, coupled to the PCS, and configured to: acquire memory temperature information, and in the offset cancellation stage, adjust, according to the memory temperature information, a magnitude of a power supply voltage provided to the PCS.

An amplification circuit includes a sense amplification circuit, including a read node SABL, a complementary read node SABLB, a first node PCS, and a second node NCS; an isolation circuit, coupled to the SABL, the SABLB, a hit line BL, and a complementary hit line BLB, configured to: in a sense amplification stage, couple the SABL to the BL and couple the BLB to the SABLB; an offset cancellation circuit, coupled to the BL, the BLB, the SABL, and the SABLB, configured to: in an offset cancellation stage, couple the BL to the SABLB and couple the BLB to the SABL; and a first power supply circuit, coupled to the PCS, and configured to: acquire memory temperature information, and in the offset cancellation stage, adjust, according to the memory temperature information, a magnitude of a power supply voltage provided to the PCS.

A memory device including a memory array configured to store data, a sense amplifier circuit coupled to the memory array, and a read circuit coupled to the sense amplifier circuit, wherein the read circuit includes a first input that receives a read column select signal for activating the read circuit to read the data out of the memory array through the read circuit during a read operation.

A memory device including a memory array configured to store data, a sense amplifier circuit coupled to the memory array, and a read circuit coupled to the sense amplifier circuit, wherein the read circuit includes a first input that receives a read column select signal for activating the read circuit to read the data out of the memory array through the read circuit during a read operation.