The present disclosure includes apparatuses and methods related to bank coordination in a memory device. A number of embodiments include a method comprising concurrently performing a memory operation by a threshold number of memory regions, and executing a command to cause a budget area to perform a power budget operation associated with the memory operation.

A digital signal processing device includes a control unit that performs control to alternately burst transfer burst length audio data in a first half area of a first buffer memory and burst length audio data in a second half area of the first buffer memory to a DRAM, in which the control unit performs control to burst transfer the burst length audio data in the first half area of the first buffer memory to the DRAM while writing audio data one word at a time to the second half area of the first buffer memory in sequence and performs control to burst transfer the burst length audio data in the second half area of the first buffer memory to the DRAM while writing audio data one word at a time to the first half area of the first buffer memory in sequence.

A digital signal processing device includes a control unit that performs control to alternately burst transfer burst length audio data in a first half area of a first buffer memory and burst length audio data in a second half area of the first buffer memory to a DRAM, in which the control unit performs control to burst transfer the burst length audio data in the first half area of the first buffer memory to the DRAM while writing audio data one word at a time to the second half area of the first buffer memory in sequence and performs control to burst transfer the burst length audio data in the second half area of the first buffer memory to the DRAM while writing audio data one word at a time to the first half area of the first buffer memory in sequence.

Embodiments combine error correction code (ECC) and transparent memory built-in self-test (TMBIST) for memory fault detection and correction. An ECC encoder receives input data and provides ECC data for data words stored in memory. Input XOR circuits receive the input data and output XOR'ed data as payload data for the data words. Output XOR circuits receive the payload data and output XOR'ed data. An ECC decoder receives the ECC data and the XOR'ed output data and generates error messages. Either test data from a controller running a TMBIST process or application data from a processor executing an application is selected as the input data. Either test address/control signals from the controller or application address/control signals from the processor are selected for memory access. During active operation of the application, memory access is provided to the processor and the controller, and the memory is tested during the active operation.

A memory includes a bank, the bank includes a plurality of sections, each of the plurality of section includes a plurality of word lines, a plurality of bit lines, and a plurality of storage units arranged in an array, and each of the plurality of storage units is connected to one of the plurality of word lines and one of the plurality of bit lines; the bank is configured to: in a preset mode, in response to a control signal, activate each of a plurality of word lines in at least one target section of the bank, pull up or pull down a level of each of a plurality of bit lines in the target section, and pull a complementary bit line of each of the plurality of bit lines in the target section to a level opposite to a level of the plurality of bit lines.

A memory includes a bank, the bank includes a plurality of sections, each of the plurality of section includes a plurality of word lines, a plurality of bit lines, and a plurality of storage units arranged in an array, and each of the plurality of storage units is connected to one of the plurality of word lines and one of the plurality of bit lines; the bank is configured to: in a preset mode, in response to a control signal, activate each of a plurality of word lines in at least one target section of the bank, pull up or pull down a level of each of a plurality of bit lines in the target section, and pull a complementary bit line of each of the plurality of bit lines in the target section to a level opposite to a level of the plurality of bit lines.

A memory system includes: a first nonvolatile memory; a second volatile memory; a controller; a power control circuit configured to perform control such that a first voltage is applied to the first memory, the second memory, and the controller based on first power supplied from an external power supply; and a power storage device configured to supply second power to the power control circuit while the first power from the external power supply is interrupted. While the first power supplied from outside is interrupted, the power control circuit applies a second voltage based on the second power supplied from the power storage device to the first memory, the second memory, and the controller. The power control circuit stops the application of the second voltage to the second memory after the data is read from the second memory and before the data is written into the first memory.

A memory system includes: a first nonvolatile memory; a second volatile memory; a controller; a power control circuit configured to perform control such that a first voltage is applied to the first memory, the second memory, and the controller based on first power supplied from an external power supply; and a power storage device configured to supply second power to the power control circuit while the first power from the external power supply is interrupted. While the first power supplied from outside is interrupted, the power control circuit applies a second voltage based on the second power supplied from the power storage device to the first memory, the second memory, and the controller. The power control circuit stops the application of the second voltage to the second memory after the data is read from the second memory and before the data is written into the first memory.

An n.sup.+ layer 3a connected to a source line SL at both ends, an n.sup.+ layer 3b connected to a bit line BL, a first gate insulating layer 4a formed on a semiconductor substrate 1 existing on an insulating film 2, a gate conductor layer 16a connected to a plate line PL, a gate insulating layer 4b formed on the semiconductor substrate, and a second gate conductor layer 5b connected to a word line WL and having a work function different from a work function of the gate conductor layer 16a are disposed on the semiconductor substrate, and data hold operation of holding, near a gate insulating film, holes generated by an impact ionization phenomenon or gate-induced drain leakage current inside a channel region 12 of the semiconductor substrate 1 and data erase operation of removing the holes from inside the substrate 1 and the channel region 12 are performed by controlling voltage applied to the source line SL, the plate line PL, the word line WL, and the bit line BL.

An n.sup.+ layer 3a connected to a source line SL at both ends, an n.sup.+ layer 3b connected to a bit line BL, a first gate insulating layer 4a formed on a semiconductor substrate 1 existing on an insulating film 2, a gate conductor layer 16a connected to a plate line PL, a gate insulating layer 4b formed on the semiconductor substrate, and a second gate conductor layer 5b connected to a word line WL and having a work function different from a work function of the gate conductor layer 16a are disposed on the semiconductor substrate, and data hold operation of holding, near a gate insulating film, holes generated by an impact ionization phenomenon or gate-induced drain leakage current inside a channel region 12 of the semiconductor substrate 1 and data erase operation of removing the holes from inside the substrate 1 and the channel region 12 are performed by controlling voltage applied to the source line SL, the plate line PL, the word line WL, and the bit line BL.