The present disclosure includes apparatuses and methods for compute enabled cache. An example apparatus comprises a compute component, a memory and a controller coupled to the memory. The controller configured to operate on a block select and a subrow select as metadata to a cache line to control placement of the cache line in the memory to allow for a compute enabled cache.

The present disclosure includes apparatuses and methods for compute enabled cache. An example apparatus comprises a compute component, a memory and a controller coupled to the memory. The controller configured to operate on a block select and a subrow select as metadata to a cache line to control placement of the cache line in the memory to allow for a compute enabled cache.

An integrated circuit includes a first memory cell array and a controller. The first memory cell array includes a first array of volatile memory cells having a first retention data time. The controller is coupled to the first memory cell array. The controller is configured to write data to each memory cell in the first memory cell array in response to the integrated circuit being successfully logged into, read data from each memory cell in the first memory cell array in response to the integrated circuit being powered on, and determine whether to allow an authentication operation of the integrated circuit in response to reading data from each memory cell in the first memory cell array.

An integrated circuit includes a first memory cell array and a controller. The first memory cell array includes a first array of volatile memory cells having a first retention data time. The controller is coupled to the first memory cell array. The controller is configured to write data to each memory cell in the first memory cell array in response to the integrated circuit being successfully logged into, read data from each memory cell in the first memory cell array in response to the integrated circuit being powered on, and determine whether to allow an authentication operation of the integrated circuit in response to reading data from each memory cell in the first memory cell array.

Methods, systems, and devices for communicating data with stacked memory dies are described. A first semiconductor die may communicate with an external computing device using a binary-symbol signal including two signal levels representing one bit of data. Semiconductor dies may be stacked on one another and include internal interconnects (e.g., through-silicon vias) to relay an internal signal generated based on the binary-symbol signal. The internal signal may be a multi-symbol signal modulated using a modulation scheme that includes three or more levels to represent more than one bit of data. The multi-level symbol signal may simplify the internal interconnects. A second semiconductor die may be configured to receive and re-transmit the multi-level symbol signal to semiconductor dies positioned above the second semiconductor die.

Methods, systems, and devices for communicating data with stacked memory dies are described. A first semiconductor die may communicate with an external computing device using a binary-symbol signal including two signal levels representing one bit of data. Semiconductor dies may be stacked on one another and include internal interconnects (e.g., through-silicon vias) to relay an internal signal generated based on the binary-symbol signal. The internal signal may be a multi-symbol signal modulated using a modulation scheme that includes three or more levels to represent more than one bit of data. The multi-level symbol signal may simplify the internal interconnects. A second semiconductor die may be configured to receive and re-transmit the multi-level symbol signal to semiconductor dies positioned above the second semiconductor die.

Some embodiments include apparatuses and methods of using the apparatuses. One of the apparatuses includes a substrate, a first deck including first memory cell strings located over the substrate, a second deck including second memory cell strings and located over the first deck, first data lines located between the first and second decks and coupled to the first memory cell strings, second data lines located over the second deck and coupled to the second memory cell strings, and first and second circuitries. The first and second data lines extending in a direction from a first portion of the substrate to a second portion of the substrate. The first buffer circuitry is located in the first portion of the substrate under the first memory cell strings of the first deck and coupled to the first data lines. The second buffer circuitry is located in the second portion of the substrate under the first memory cell strings of the first deck and coupled to the second data lines.

Some embodiments include apparatuses and methods of using the apparatuses. One of the apparatuses includes a substrate, a first deck including first memory cell strings located over the substrate, a second deck including second memory cell strings and located over the first deck, first data lines located between the first and second decks and coupled to the first memory cell strings, second data lines located over the second deck and coupled to the second memory cell strings, and first and second circuitries. The first and second data lines extending in a direction from a first portion of the substrate to a second portion of the substrate. The first buffer circuitry is located in the first portion of the substrate under the first memory cell strings of the first deck and coupled to the first data lines. The second buffer circuitry is located in the second portion of the substrate under the first memory cell strings of the first deck and coupled to the second data lines.

A semiconductor memory device capable of suppressing an increase in power consumption and avoiding data destruction due to the row hammer problem is provided. The semiconductor memory device includes a refresh control unit (first control unit) that sets a memory cell refresh interval based on information about a memory cell refresh interval included in a predetermined command input from the outside.

A semiconductor memory device capable of suppressing an increase in power consumption and avoiding data destruction due to the row hammer problem is provided. The semiconductor memory device includes a refresh control unit (first control unit) that sets a memory cell refresh interval based on information about a memory cell refresh interval included in a predetermined command input from the outside.