H01B1/02

COPPER ALLOY, COPPER ALLOY PLASTIC WORKING MATERIAL, ELECTRONIC/ELECTRICAL DEVICE COMPONENT, TERMINAL, BUSBAR, AND HEAT-DIFFUSING SUBSTRATE

A copper alloy has a composition including 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, the electrical conductivity is 90% IACS or more, and a length L.sub.LB of a low-angle grain boundary and a subgrain boundary and a length L.sub.HB of a high-angle grain boundary have a relationship of L.sub.LB/(L.sub.LB+L.sub.HB)>20%.

Aluminum conductor alloys having improved creeping resistance

The present disclosure concerns aluminum conductor alloys having increased creep resistance, aluminum products comprising same and process using same. In some embodiments, the aluminum conductor alloy comprises, in weight percent: up to about 0.10 Si; up to about 0.5 Fe; up to about 0.30 Cu; between about 0.02 and about 0.1 Mg; up to about 0.04 B; and the balance being aluminum and unavoidable impurities.

Copper paste for pressureless bonding, bonded body and semiconductor device

A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 μm and less than or equal to 0.8 μm, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 μm and less than or equal to 50 μm, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.

Terminal material with silver coating film and terminal with silver coating film

In a terminal material with a silver coating film including a silver layer on a surface, a terminal and a terminal material having high reliability are easily manufactured with low cost without a heat treatment. A base material formed of copper or a copper alloy; and nickel layer, an intermediate layer, and a silver layer laminated on the base material in this order are included, the nickel layer has a thickness of 0.05 μm to 5.00 μm and is formed of nickel or a nickel alloy, the intermediate layer has a thickness of 0.02 μm to 1.00 μm and is an alloy layer containing silver (Ag) and a substance X, and the substance X includes one or more kinds of tin, bismuth, gallium, indium, and germanium.

Terminal material with silver coating film and terminal with silver coating film

In a terminal material with a silver coating film including a silver layer on a surface, a terminal and a terminal material having high reliability are easily manufactured with low cost without a heat treatment. A base material formed of copper or a copper alloy; and nickel layer, an intermediate layer, and a silver layer laminated on the base material in this order are included, the nickel layer has a thickness of 0.05 μm to 5.00 μm and is formed of nickel or a nickel alloy, the intermediate layer has a thickness of 0.02 μm to 1.00 μm and is an alloy layer containing silver (Ag) and a substance X, and the substance X includes one or more kinds of tin, bismuth, gallium, indium, and germanium.

COPPER ALLOY, COPPER ALLOY PLASTIC WORKING MATERIAL, COMPONENT FOR ELECTRONIC/ELECTRICAL EQUIPMENT, TERMINAL, BUSBAR, AND HEAT- DIFFUSING SUBSTRATE

A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, an average crystal grain size is in a range of 10 μm or more and 100 μm or less, an electrical conductivity is 90% IACS or more, and a residual stress rate is 50% or more at 150° C. after 1000 hours.

INTEGRATION OF METAL NANOWIRE NETWORK INTO CONDUCTING POLYMERS
20220388029 · 2022-12-08 ·

A metallic nanowire: conductive polymer composite is fabricated. A metallic nanowire layer is formed by a process that leaves an organic ligand residue on the metallic nanowire layer. A conductive polymer film is formed on a supporting substrate. The metallic nanowire layer is integrated with the conductive polymer film to form a metallic nanowire: conductive polymer composite. The metallic nanowire: conductive polymer composite is wet by a reaction solution including a source of metal ions, at least one acid, and a solvent for a period of time sufficient to remove the organic ligand residues from the metallic nanowire layer and sufficient to grow metal nanoparticles from the source of metal ions to create metal interconnections at junctions where the two or more nanowires in the metallic nanowire layer touch each other. Following growth of the nanoparticles, the nanowire: conductive polymer composite is removed from the reaction solution and dried.

Laminate and laminated glass

A laminate comprising a base material film, a resin layer (1) having a detachable surface, and a heat-generating conductive layer in this order.

High optical transparent two-dimensional electronic conducting system and process for generating same

Hybrid transparent conducting materials are disclosed which combine a polycrystalline film and conductive nanostructures, in which the polycrystalline film is “percolation doped” with the conductive nanostructures. The polycrystalline film preferably is a single atomic layer thickness of polycrystalline graphene, and the conductive nanostructures preferably are silver nanowires.

High optical transparent two-dimensional electronic conducting system and process for generating same

Hybrid transparent conducting materials are disclosed which combine a polycrystalline film and conductive nanostructures, in which the polycrystalline film is “percolation doped” with the conductive nanostructures. The polycrystalline film preferably is a single atomic layer thickness of polycrystalline graphene, and the conductive nanostructures preferably are silver nanowires.