Provided herein are methods for making a freeze-cast material having a internal structure, the methods comprising steps of: determining the internal structure of the material, the internal structure having a plurality of pores, wherein: each of the plurality of pores has directionality; and the step of determining comprises: selecting a temperature gradient and a freezing front velocity to obtain the determined internal structure based on the selected temperature gradient and the selected freezing front velocity; directionally freezing a liquid formulation to form a frozen solid, the step of directionally freezing comprising: controlling the temperature gradient and the freezing front velocity to match the selected temperature gradient and the selected freezing front velocity during directionally freezing; wherein the liquid formulation comprises at least one solvent and at least one dispersed species; and subliming the at least one solvent out of the frozen solid to form the material.

Provided herein are methods for making a freeze-cast material having a internal structure, the methods comprising steps of: determining the internal structure of the material, the internal structure having a plurality of pores, wherein: each of the plurality of pores has directionality; and the step of determining comprises: selecting a temperature gradient and a freezing front velocity to obtain the determined internal structure based on the selected temperature gradient and the selected freezing front velocity; directionally freezing a liquid formulation to form a frozen solid, the step of directionally freezing comprising: controlling the temperature gradient and the freezing front velocity to match the selected temperature gradient and the selected freezing front velocity during directionally freezing; wherein the liquid formulation comprises at least one solvent and at least one dispersed species; and subliming the at least one solvent out of the frozen solid to form the material.

Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.

Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.

Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.

Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.

A polymeric flexible substrate may be formed from h-BN sheets having a monolayer of hexagonal born nitride interspersed with domains of at least one functionalized material. The functionalized h-BN sheets may be used in various electronic components such as in circuit boards and touch sensors.

A polymeric flexible substrate may be formed from h-BN sheets having a monolayer of hexagonal born nitride interspersed with domains of at least one functionalized material. The functionalized h-BN sheets may be used in various electronic components such as in circuit boards and touch sensors.

An Ag.sub.2OV.sub.2O.sub.5TeO.sub.2 lead-free low-melting glass composition that is prevented or restrained from crystallization by heating so as to soften and flow more satisfactorily at a low temperature contains a principal component which includes a vanadium oxide, a tellurium oxide and a silver oxide; a secondary component which includes at least one selected from the group consisting of BaO, WO.sub.3 and P.sub.2O.sub.5; and an additional component which includes at least one selected from the group consisting of oxides of elements in Group 13 of periodic table. A total component of the principal component is 85 mole percent or more in terms of V.sub.2O.sub.5, T.sub.eO.sub.2 and Ag.sub.2O. Contents of TeO.sub.2 and Ag.sub.2O each is 1 to 2 times as much as a content of V.sub.2O.sub.5. A content of the secondary component is 0 to 13 mole percent. A content of the additional component is 0.1 to 3.0 mole percent.

An ESD protection device 1 has a ceramic insulating material 10, first and second discharge electrodes 21 and 22, and a discharge-assisting section 51. The first and second discharge electrodes 21 and 22 are disposed somewhere of the ceramic insulating material 10. The discharge-assisting section 51 is located between the distal end portion of the first discharge electrode 21 and the distal end portion of the second discharge electrode 22. The discharge-assisting section 51 is an electrode configured to reduce the discharge starting voltage between the first discharge electrode 21 and the second discharge electrode 22. The discharge-assisting section 51 is made from a sintered body containing conductive particles and at least one of semiconductor particles and insulating particles. The first and second discharge electrodes contain at least one of the semiconductor material constituting the semiconductor particles and the insulating material constituting the insulating particles.