The present invention provides an anisotropic electrically conductive film with a structure, in which electrically conductive particles are disposed at lattice points of a planar lattice pattern in an electrically insulating adhesive base layer. A proportion of the lattice points, at which no electrically conductive particle is disposed, with respect to all the lattice points of the planar lattice pattern assumed as a reference region, is less than 20%. A proportion of the lattice points, at which plural electrically conductive particles are disposed in an aggregated state, with respect to all the lattice points of the planar lattice pattern, is not greater than 15%. A sum of omission of the electrically conductive particle and an aggregation of the electrically conductive particles is less than 25%.

In a connection structure, a first electronic component having a first terminal pattern and a second electronic component having a second terminal pattern different in size and pitch from the first terminal pattern are anisotropically conductively connected by an anisotropic conductive film to a third electronic component having a terminal pattern corresponding to each of the first terminal pattern and the second terminal pattern. The anisotropic conductive film has at least one of a region in which conductive particles are regularly arranged, and a plurality of regions in which at least one of a number density, a particle diameter, and a hardness of the conductive particles in one region is different from that in the other region.

In a connection structure, a first electronic component having a first terminal pattern and a second electronic component having a second terminal pattern different in size and pitch from the first terminal pattern are anisotropically conductively connected by an anisotropic conductive film to a third electronic component having a terminal pattern corresponding to each of the first terminal pattern and the second terminal pattern. The anisotropic conductive film has at least one of a region in which conductive particles are regularly arranged, and a plurality of regions in which at least one of a number density, a particle diameter, and a hardness of the conductive particles in one region is different from that in the other region.

A first object of the present invention is to provide a conductive film having excellent substrate adhesiveness and a method for manufacturing the conductive film. A second object of the present invention is to provide a thermoelectric conversion layer, a thermoelectric conversion element, and a thermoelectric conversion module which are formed using the conductive film. A third object of the present invention is to provide a composition for forming the conductive film.

The conductive film according to an embodiment of the present invention contains carbon nanotubes and an insulating polymer having a polar group, in which a content of oxygen atoms in the carbon nanotubes is 0.5 to 5.0 atm %, and a content of the insulating polymer with respect to the carbon nanotubes is 10% to 100% by mass.

The electroconductive filler of the present invention is formed of glass fiber powder and granules. The glass fiber is equipped with a metal coating in the longitudinal direction of the glass fiber, and the glass fiber has a fiber length distribution. L10 (a fiber length at 10% in a number-basis cumulative distribution is 20 m to 200 m, L97 (a fiber length at 97% in the number-basis cumulative distribution) is 400 m to 1000 m, and the glass fiber mean fiber diameter is 1 to 40 m.

The electroconductive filler of the present invention is formed of glass fiber powder and granules. The glass fiber is equipped with a metal coating in the longitudinal direction of the glass fiber, and the glass fiber has a fiber length distribution. L10 (a fiber length at 10% in a number-basis cumulative distribution is 20 m to 200 m, L97 (a fiber length at 97% in the number-basis cumulative distribution) is 400 m to 1000 m, and the glass fiber mean fiber diameter is 1 to 40 m.

Provided is a fabric including a plurality of fibers disposed in a fabric configuration. At least one of the fibers comprises a device fiber having a device fiber body including a device fiber body material, having a longitudinal axis along a device fiber body length. A plurality of discrete devices are disposed as a linear sequence within the device fiber body along at least a portion of the device fiber body length. Each discrete device includes at least one electrical contact pad. The device fiber body includes device fiber body material regions disposed between adjacent discrete devices in the linear sequence, separating adjacent discrete devices. At least one electrical conductor is disposed within the device fiber body along at least a portion of the device fiber body length. The electrical conductor is disposed in electrical connection with an electrical contact pad of discrete devices within the device fiber body.

Provided is a fabric including a plurality of fibers disposed in a fabric configuration. At least one of the fibers comprises a device fiber having a device fiber body including a device fiber body material, having a longitudinal axis along a device fiber body length. A plurality of discrete devices are disposed as a linear sequence within the device fiber body along at least a portion of the device fiber body length. Each discrete device includes at least one electrical contact pad. The device fiber body includes device fiber body material regions disposed between adjacent discrete devices in the linear sequence, separating adjacent discrete devices. At least one electrical conductor is disposed within the device fiber body along at least a portion of the device fiber body length. The electrical conductor is disposed in electrical connection with an electrical contact pad of discrete devices within the device fiber body.

An object of the present invention is to provide a ferroelectric memory element which has a low driving voltage and which can be formed by coating. The present invention provides a ferroelectric memory element including at least: a first conductive film; a second conductive film; and a ferroelectric layer provided between the first conductive film and the second conductive film; wherein the ferroelectric layer contains ferroelectric particles and an organic component, and wherein the ferroelectric particles have an average particle size of from 30 to 500 nm.

An object of the present invention is to provide a ferroelectric memory element which has a low driving voltage and which can be formed by coating. The present invention provides a ferroelectric memory element including at least: a first conductive film; a second conductive film; and a ferroelectric layer provided between the first conductive film and the second conductive film; wherein the ferroelectric layer contains ferroelectric particles and an organic component, and wherein the ferroelectric particles have an average particle size of from 30 to 500 nm.