The present disclosure relates to DC transmission. Some embodiments may include a device for DC transmission comprising: a superconducting transmission line including a superconducting conductor element; and a cooling device for cooling an inner region of the transmission line with a fluid coolant to a temperature below a critical temperature of the superconducting conductor element. The superconducting transmission line may comprise a vacuum-insulated sleeve thermally isolating the inner region of the transmission line from a warmer outer surrounding area. The cooling device may comprise a feed device feeding coolant at an end region of the transmission line into the inner region of the transmission line. The transmission line may be free of internally arranged feed devices for feeding coolant at locations away from the end region.

The present disclosure relates to DC transmission. Some embodiments may include a device for DC transmission comprising: a superconducting transmission line including a superconducting conductor element; and a cooling device for cooling an inner region of the transmission line with a fluid coolant to a temperature below a critical temperature of the superconducting conductor element. The superconducting transmission line may comprise a vacuum-insulated sleeve thermally isolating the inner region of the transmission line from a warmer outer surrounding area. The cooling device may comprise a feed device feeding coolant at an end region of the transmission line into the inner region of the transmission line. The transmission line may be free of internally arranged feed devices for feeding coolant at locations away from the end region.

A method, system, and apparatus for fabricating a high-strength Superconducting cable comprises pre-oxidizing at least one high-strength alloy wire, coating at least one Superconducting wire with a protective layer, and winding the high-strength alloy wire and the Superconducting wire to form a high-strength Superconducting cable.

An oxide superconducting wire includes: a laminate which is formed by laminating a tape-shaped base, an intermediate layer, and an oxide superconducting layer; a first protective layer which is formed of Ag or an Ag alloy and is laminated on a main surface of the oxide superconducting layer of the laminate; a second protective layer which is formed of Cu or a Cu alloy, is laminated on a main surface of the first protective layer by performing film formation one or more times, and has a thickness of 0.3 μm to 10 μm; and a stabilization layer which is bonded to a main surface of the second protective layer with a solder layer interposed therebetween, wherein the second protective layer is formed to have a thickness of equal to or less than 2.1 μm per film formation.

An oxide superconducting wire includes: a laminate which is formed by laminating a tape-shaped base, an intermediate layer, and an oxide superconducting layer; a first protective layer which is formed of Ag or an Ag alloy and is laminated on a main surface of the oxide superconducting layer of the laminate; a second protective layer which is formed of Cu or a Cu alloy, is laminated on a main surface of the first protective layer by performing film formation one or more times, and has a thickness of 0.3 μm to 10 μm; and a stabilization layer which is bonded to a main surface of the second protective layer with a solder layer interposed therebetween, wherein the second protective layer is formed to have a thickness of equal to or less than 2.1 μm per film formation.

The present invention relates to a precursor (1) for production of a high-temperature superconductor (HTS) in ribbon form, comprising a metallic substrate (10) in ribbon form having a first ribbon side (11) and a second ribbon side (12), wherein, on the first ribbon side (11), (a) the substrate (10) has a defined texture as template for crystallographically aligned growth of a buffer layer or an HTS layer and (b) an exposed surface of the substrate (10) is present or one or more layers (20,30) are present that are selected from the group consisting of: buffer precursor layer, pyrolyzed buffer precursor layer, buffer layer, HTS precursor layer, pyrolyzed HTS buffer precursor layer and pyrolyzed and further consolidated HTS buffer precursor layer, and, on the second ribbon side (12), at least one ceramic barrier layer (40) that protects the substrate (10) against oxidation or a precursor which is converted to such a layer during the HTS crystallization annealing or the pyrolysis is present, wherein, when one or more layers (20, 30) are present on the first ribbon side (11), the ceramic barrier layer (40) or the precursor thereof has a different chemical composition and/or a different texture than the layer (20) arranged on the first ribbon side (11) and directly adjoining the substrate (10). In this precursor, the barrier layer (40) is a layer that delays or prevents ingress of oxygen to the second ribbon side (12) and is composed of conductive ceramic material or a precursor which is converted to such a precursor during the HTS crystallization annealing or the pyrolysis, and the ceramic material is an electrically conductive metal oxide or an electrically conductive mixture of metal oxides, wherein the conductive metal oxide or one or more metal oxides in the conductive mixture is/are preferably metal oxide(s) doped with an extraneous metal.

The present invention relates to a precursor (1) for production of a high-temperature superconductor (HTS) in ribbon form, comprising a metallic substrate (10) in ribbon form having a first ribbon side (11) and a second ribbon side (12), wherein, on the first ribbon side (11), (a) the substrate (10) has a defined texture as template for crystallographically aligned growth of a buffer layer or an HTS layer and (b) an exposed surface of the substrate (10) is present or one or more layers (20,30) are present that are selected from the group consisting of: buffer precursor layer, pyrolyzed buffer precursor layer, buffer layer, HTS precursor layer, pyrolyzed HTS buffer precursor layer and pyrolyzed and further consolidated HTS buffer precursor layer, and, on the second ribbon side (12), at least one ceramic barrier layer (40) that protects the substrate (10) against oxidation or a precursor which is converted to such a layer during the HTS crystallization annealing or the pyrolysis is present, wherein, when one or more layers (20, 30) are present on the first ribbon side (11), the ceramic barrier layer (40) or the precursor thereof has a different chemical composition and/or a different texture than the layer (20) arranged on the first ribbon side (11) and directly adjoining the substrate (10). In this precursor, the barrier layer (40) is a layer that delays or prevents ingress of oxygen to the second ribbon side (12) and is composed of conductive ceramic material or a precursor which is converted to such a precursor during the HTS crystallization annealing or the pyrolysis, and the ceramic material is an electrically conductive metal oxide or an electrically conductive mixture of metal oxides, wherein the conductive metal oxide or one or more metal oxides in the conductive mixture is/are preferably metal oxide(s) doped with an extraneous metal.

A light detection device having improved self-alignment precision using a hard mask, and a method for manufacturing the same is provided. A method of manufacturing a light detection device includes i) providing a substrate; ii) providing a light reflecting portion on the substrate; iii) providing a light detection portion on the light reflection portion; iv) providing an anti-reflection portion provided on the light reflection portion to cover the light detection portion; v) removing each of the first outer periphery of the light reflection portion and the second outer periphery of the anti-reflection portion, and vi) providing a hard mask formed to correspond to the removed first outer periphery, positioned on the substrate, and spaced apart from the light reflecting portion to surround the light reflecting portion.

A method and composition for doped HTS tapes having directional flux pinning and critical current.

A method and composition for doped HTS tapes having directional flux pinning and critical current.