H01B19/04

Method of manufacturing electrically conductive stretchable interconnect using twisted nature of yarn fibers

Disclosed herein are an electrically conductive stretchable interconnect using a twisted nature of yarn fibers and a method of manufacturing the same. According to an exemplary embodiment of the present invention, the electrically conductive stretchable interconnect includes: an elastic body in which a stretchable tunnel is formed in a length direction; and a conductive twisted yarn including a stretchable structure positioned inside the stretchable tunnel and extended by a force applied in the length direction and an extending part extending from the stretchable structure to an outside of the elastic body.

Method of manufacturing electrically conductive stretchable interconnect using twisted nature of yarn fibers

Disclosed herein are an electrically conductive stretchable interconnect using a twisted nature of yarn fibers and a method of manufacturing the same. According to an exemplary embodiment of the present invention, the electrically conductive stretchable interconnect includes: an elastic body in which a stretchable tunnel is formed in a length direction; and a conductive twisted yarn including a stretchable structure positioned inside the stretchable tunnel and extended by a force applied in the length direction and an extending part extending from the stretchable structure to an outside of the elastic body.

Cable having polymer with additive for increased linear pullout resistance

A cable apparatus having an increased linear pullout resistance and related methods is disclosed. The apparatus includes a metal tube. At least one conductor is positioned within the metal tube. An armor shell is positioned exterior of the metal tube and the at least one conductor. A polymer material is abutting the metal tube, wherein the polymer material includes therein at least one additive, wherein the polymer material with the at least one additive remains substantially inert during a recrystallization process.

Cable having polymer with additive for increased linear pullout resistance

A cable apparatus having an increased linear pullout resistance and related methods is disclosed. The apparatus includes a metal tube. At least one conductor is positioned within the metal tube. An armor shell is positioned exterior of the metal tube and the at least one conductor. A polymer material is abutting the metal tube, wherein the polymer material includes therein at least one additive, wherein the polymer material with the at least one additive remains substantially inert during a recrystallization process.

Method for fabrication of crack-free ceramic dielectric films

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

Method for fabrication of crack-free ceramic dielectric films

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

INTEGRATED FLEXIBLE CIRCUIT ATTACHMENT FEATURES WITH SOUND DAMPENING AND METHOD OF FORMING SAID FEATURES

A wiring assembly including a flex circuit including a plastic laminate layer and a mount location configured to receive a fastener secured to a substrate. The wiring assembly further includes a flex circuit attachment feature, the flex circuit attachment feature including an extruded material bonded to the plastic laminate layer at the mount location. The flex circuit attachment feature provides a structural strength at the mount location and provides a cushion between the flex circuit and the substrate.

INTEGRATED FLEXIBLE CIRCUIT ATTACHMENT FEATURES WITH SOUND DAMPENING AND METHOD OF FORMING SAID FEATURES

A wiring assembly including a flex circuit including a plastic laminate layer and a mount location configured to receive a fastener secured to a substrate. The wiring assembly further includes a flex circuit attachment feature, the flex circuit attachment feature including an extruded material bonded to the plastic laminate layer at the mount location. The flex circuit attachment feature provides a structural strength at the mount location and provides a cushion between the flex circuit and the substrate.

PROCESSING APPARATUS AND PROCESSING METHOD

According to one embodiment, a processing apparatus includes a container, a processor, a supply unit, a recovery unit, a calculator, and a replenishing liquid supply unit. The container contains buffered hydrogen fluoride. The processor performs processing of a processing object using the buffered hydrogen fluoride. The supply unit supplies the buffered hydrogen fluoride to the processor. The buffered hydrogen fluoride is contained in the container. The recovery unit recovers the buffered hydrogen fluoride used in the processor and supplies the recovered buffered hydrogen fluoride to the container. The calculator calculates an evaporation amount of the buffered hydrogen fluoride. The replenishing liquid supply unit supplies the same amount of a replenishing liquid as the calculated evaporation amount of the buffered hydrogen fluoride to the buffered hydrogen fluoride. The replenishing liquid includes ammonia and water.

PROCESSING APPARATUS AND PROCESSING METHOD

According to one embodiment, a processing apparatus includes a container, a processor, a supply unit, a recovery unit, a calculator, and a replenishing liquid supply unit. The container contains buffered hydrogen fluoride. The processor performs processing of a processing object using the buffered hydrogen fluoride. The supply unit supplies the buffered hydrogen fluoride to the processor. The buffered hydrogen fluoride is contained in the container. The recovery unit recovers the buffered hydrogen fluoride used in the processor and supplies the recovered buffered hydrogen fluoride to the container. The calculator calculates an evaporation amount of the buffered hydrogen fluoride. The replenishing liquid supply unit supplies the same amount of a replenishing liquid as the calculated evaporation amount of the buffered hydrogen fluoride to the buffered hydrogen fluoride. The replenishing liquid includes ammonia and water.