A chip component comprises: an insulating substrate on which a resistor serving as a functional element is formed; a pair of internal electrodes (front electrodes, end surface electrodes, and back electrodes) that is formed to cover both end portions of the insulating substrate and connected to the resistor; a barrier layer that is formed on a surface of each of the internal electrodes and mainly composed of nickel; and an external connection layer that is formed on a surface of the barrier layer and mainly composed of tin, and the barrier layer is composed of alloy plating (Ni—P) including nickel and phosphorus, which is formed by electrolytic plating, and a content ratio of phosphorus relative to nickel is set in a range of 0.5% to 5% so that the barrier layer has magnetism.

A temperature sensor provided with: an element that comprises a resistor which has a resistance value that changes with temperature thereof, and a lead wire; a signal wire that is bonded to the lead wire by welding; and a cover that covers the element and a welded part between the lead wire and the signal wire, where the lead wire comprises a material in which oxide particles are dispersed in platinum or platinum alloy; and the welded part has a welded part interface region along an interface with the lead wire or the signal wire, and a welded part main region inside thereof, and a volume ratio of the oxide particles occupying the welded part interface region is larger than a volume ratio of the oxide particles occupying the welded part main region.

A chip resistor includes a substrate, an upper electrode and a resistor body, a back electrode, a side electrode, and a metal plating layer. The substrate includes an upper surface, a back surface that intersect a thickness-wise direction and a side surface that joins the upper surface and the back surface. The upper electrode and the resistor body are formed on the upper surface. The back electrode is formed on the back surface. The side electrode is formed on the side surface. The metal plating layer includes a back plating layer and a side plating layer. The back plating layer covers at least a portion of the back electrode. The side plating layer covers at least a portion of the side electrode. The metal plating layer has a thickness that is greater than or equal to 10 μm and less than or equal to 60 μm.

A chip resistor includes a substrate, an upper electrode and a resistor body, a back electrode, a side electrode, and a metal plating layer. The substrate includes an upper surface, a back surface that intersect a thickness-wise direction and a side surface that joins the upper surface and the back surface. The upper electrode and the resistor body are formed on the upper surface. The back electrode is formed on the back surface. The side electrode is formed on the side surface. The metal plating layer includes a back plating layer and a side plating layer. The back plating layer covers at least a portion of the back electrode. The side plating layer covers at least a portion of the side electrode. The metal plating layer has a thickness that is greater than or equal to 10 μm and less than or equal to 60 μm.

An over-current protection device comprises first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer comprises a polymer matrix, a conductive ceramic filler, a carbon- containing conductive filler, and an inner filler. The polymer matrix comprises a fluoropolymer having a melting point higher than 150° C. The inner filler is selected from one of aluminum nitride, silicon carbide, zirconium oxide, boron nitride, graphene, aluminum oxide, or any mixtures thereof, and comprises 2-10% by volume of the PTC material layer. The over-current protection device is able to mitigate negative temperature coefficient (NTC) behavior after trip of device, and achieves high hold current and high endurable power.

A multilayer chip varistor includes an element body, first and second external electrodes, and first and second electrical conductor groups. The first electrical conductor group includes a first internal electrode connected to the first external electrode, and a first intermediate electrical conductor opposed to the first internal electrode. The second electrical conductor group includes a second internal electrode including a first electrically conductive material and connected to the second external electrode, and a second intermediate electrical conductor opposed to the second internal electrode. At least one of the first and second intermediate electrical conductors includes the second electrically conductive material. The element body includes a low electrical resistance region between the first and second internal electrodes. The second electrically conductive material is diffused in the low electrical resistance region.

An over-current protection device comprises first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer comprises a polymer matrix and carbon black. The polymer matrix comprises a fluoropolymer having a melting point higher than 150° C. The carbon black is dispersed in the polymer matrix. A resistance jump R.sub.jump_1000@16V/50A of the over-current protection device at 16V/50 A by 1000 cycles is 0.80-1.20. A resistance jump R.sub.jump_1000@25V/50A of the over-current protection device at 25V/50 A by 1000 cycles is 0.90-1.30.

An object is to provide a chip resistor capable of coping with high power. A chip resistor of the present disclosure includes insulating substrate, a pair of electrodes, and resistance member. A pair of electrodes are provided at both ends of the upper face of insulating substrate. Resistance member is provided on insulating substrate and connected to the pair of electrodes. Insulating substrate has first region in the center thereof and second regions at both ends of first region. Recess is provided in first region of insulating substrate. Resistance member formed in first region has a meandering shape in a top view. At least a part of resistance member is embedded in recess. Trimming groove is provided in resistance member formed in second region.

An object is to provide a chip resistor capable of coping with high power. A chip resistor of the present disclosure includes insulating substrate, a pair of electrodes, and resistance member. A pair of electrodes are provided at both ends of the upper face of insulating substrate. Resistance member is provided on insulating substrate and connected to the pair of electrodes. Insulating substrate has first region in the center thereof and second regions at both ends of first region. Recess is provided in first region of insulating substrate. Resistance member formed in first region has a meandering shape in a top view. At least a part of resistance member is embedded in recess. Trimming groove is provided in resistance member formed in second region.

A composite circuit protection device includes: a first positive temperature coefficient (PTC) component; a first voltage-dependent resistor (VOR); a second VOR; and a plurality of conductive leads that correspondingly connect to the first PTC component, the first VOR and the second VOR. The second VOR and the first PTC component are electrically connected in series, the first VOR and the second VOR are electrically connected in parallel, the first PTC component and the first VOR are electrically connected in parallel, and the first VOR has a varistor voltage greater than that of the second VOR as determined at 1 mA.