A chip resistor includes an insulated substrate having a rectangular parallelepiped shape, a first front electrode and a second front electrode created on both longitudinal ends of the insulated substrate, and a resistive element making a connection between the first and second front electrodes. The resistive element is formed in a meandering shape with a first region and a second region continuing in series via a jointing section between a pair of connecting portions. Moreover, in the first region, a first trimming groove for rough adjustment is formed to elongate a current path of the resistive element. In the second region, a second trimming groove is formed for fine adjustment extending in a direction angled with respect to a straight line along a direction in which the first trimming groove extends.

It is aimed to provide a laminated varistor capable of reducing stray capacitance to occur between an internal electrode and an external electrode, and also capable of reducing a variation in the stray capacitance due to a variation in the external electrode. A laminated varistor of the present disclosure has external electrodes on first end surface, second end surface, and first side surface of sintered body. No external electrode is provided on second side surface opposite to first side surface. Varistor regions in which internal electrodes overlap each other in a laminating direction are provided at positions closer to second side surface than to first side surface.

It is aimed to provide a laminated varistor capable of reducing stray capacitance to occur between an internal electrode and an external electrode, and also capable of reducing a variation in the stray capacitance due to a variation in the external electrode. A laminated varistor of the present disclosure has external electrodes on first end surface, second end surface, and first side surface of sintered body. No external electrode is provided on second side surface opposite to first side surface. Varistor regions in which internal electrodes overlap each other in a laminating direction are provided at positions closer to second side surface than to first side surface.

Provided is a copper-manganese-nickel based alloy having characteristics (in particular, specific resistance) close to those of a nickel-chromium based alloy. It is also an objective to provide an alloy having high processability compared to a nickel-chromium based alloy. An alloy for a resistive body includes copper, manganese, and nickel, wherein the manganese is 33 to 38% by mass, and the nickel is 8 to 15% by mass.

Provided is a copper-manganese-nickel based alloy having characteristics (in particular, specific resistance) close to those of a nickel-chromium based alloy. It is also an objective to provide an alloy having high processability compared to a nickel-chromium based alloy. An alloy for a resistive body includes copper, manganese, and nickel, wherein the manganese is 33 to 38% by mass, and the nickel is 8 to 15% by mass.

A chip ceramic semiconductor electronic component includes a ceramic body including a ceramic semiconductor, and a first surface and a second surface in contact with the first surface, the first outer electrode on the first surface of the ceramic body, and the second outer electrode covering the first outer electrode and extending onto the second surface of the ceramic body, in which an area of a first surface of the first outer electrode is less than about 0.17 mm.sup.2, and a hard particle made of a material harder than the first outer electrode is at the interface between the first and second outer electrodes.

A sintered body has a first end face and a second end face opposite to each other in a first direction and a first side face and a second side face opposite to each other in a second direction. A first end face electrode is disposed on the first end face except for end portions of the first end face in the second direction. A second end face electrode is disposed on the second end face except for end portions of the second end face in the second direction. A first side face electrode is disposed on the first side face except for end portions of the first side face in the first direction. A second side face electrode is disposed on the second side face except for end portions of the second side face in the first direction.

A multilayer varistor includes: a sintered compact; an internal electrode provided inside the sintered compact; a high-resistivity layer arranged to cover the sintered compact at least partially and containing element Si; and an external electrode arranged to cover the high-resistivity layer partially, electrically connected to the internal electrode, and containing silver as a main component thereof. A ratio of a total mass of the alkali metals and the alkaline earth metals to a mass of the element Si in a surface region of the high-resistivity layer is equal to or less than 0.6.

A multilayer varistor includes: a sintered compact; an internal electrode provided inside the sintered compact; a high-resistivity layer arranged to cover the sintered compact at least partially and containing element Si; and an external electrode arranged to cover the high-resistivity layer partially, electrically connected to the internal electrode, and containing silver as a main component thereof. A ratio of a total mass of the alkali metals and the alkaline earth metals to a mass of the element Si in a surface region of the high-resistivity layer is equal to or less than 0.6.

The temperature sensor is provided with a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion is provided with an insulating film; a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material; a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on the thin film thermistor portion; and a pair of pattern electrodes connected to the pair of interdigitated electrodes and formed as patterns on the surface of the insulating film. The pair of lead frames is extended and adhered to the surface of the insulating film disposing the thin film thermistor portion therebetween and is connected to the pair of pattern electrodes.