A power diffusing assembly includes a power diffusing body disposed along a flow path of a compressible fluid. The power diffusing body includes passages extending through the power diffusing body and through which at least part of the fluid flows through the power diffusing body. The power diffusing body receives an incoming flow profile of the fluid on an inlet side of the power diffusing body, directs the fluid through the passages in the power diffusing body, and outputs an outgoing flow profile of the fluid out of an outlet side of the power diffusing body. Arrangements of the passages in the power diffusing body are based on the incoming flow profile of the fluid that are received by the power diffusing body and are based on a desired profile of the outgoing flow profile of the fluid exiting out of the power diffusing body.

A method for producing a device for measuring current intensities, including: providing a resistor arrangement having connection elements and a resistor element arranged therebetween in a current flow direction. The resistor element and the connection elements consist of different electrically conductive materials; forming a contact pin from the material of at least one connection element; positioning a printed circuit board with a conductor track and a passage bore on the resistor arrangement such that the contact pin projects through the passage bore and has on the side of the printed circuit board facing away from the resistor arrangement a protrusion; laterally widening the contact pin in the region of the protrusion by deforming the material such that the printed circuit board is mechanically fixed to the resistor arrangement; and producing an electrically conductive connection between the contact pin and the conductor track of the printed circuit board.

In an embodiment a multilayer varistor includes a ceramic body made from a varistor material, wherein the ceramic body includes a plurality of inner electrodes, first regions and second regions, wherein the varistor material in the first regions has a first average grain size D.sub.A, wherein the varistor material in the second regions has a second average grain size D.sub.B, and wherein D.sub.A<D.sub.B.

In an embodiment a multilayer varistor includes a ceramic body made from a varistor material, wherein the ceramic body includes a plurality of inner electrodes, first regions and second regions, wherein the varistor material in the first regions has a first average grain size D.sub.A, wherein the varistor material in the second regions has a second average grain size D.sub.B, and wherein D.sub.A<D.sub.B.

Techniques for improving current sensing via a shunt resistance are provided. In an example, an apparatus for sensing current can include a substrate, and a plurality of metal layers stacked on the substrate and separated from the substrate and from each other by an insulation material. In certain examples, a first one or more metal layers can form a sense resistance configured to pass current between a source and a load, and a second one or more metal layers can form one or more gain resistances coupled to the sense resistance and configured to couple to a current sense amplifier. In some example, a metal layer can include portions of both the sense resistance and the gain resistance to compensate for environmental anomalies, material anomalies or manufacturing anomalies.

To provide a resistance device which has a small temperature dependence, in which a resistance value is adjustable in a wide range of from a high resistance value to a low resistance value, and which has a small circuit area, and to provide a current detection circuit including the resistance device. The resistance device is to be connected between two terminals, and a resistance value thereof is variable, the resistance device including: a reference resistor; a series variable resistor circuitry including at least one parallel variable resistor circuit which is connected in series to each other, and which each includes a resistor and a trimming element connected in parallel to the resistor; and a parallel variable resistor circuitry including at least one series variable resistor circuit which is connected in parallel to each other, and which each includes a resistor and a trimming element connected in series to the resistor.

Provided is a semiconductor device which is a facedown mounting, chip-size-package-type semiconductor device and includes: a transistor element including a first electrode, a second electrode, and a control electrode which controls a conduction state between the first electrode and the second electrode; a plurality of first resistor elements each including a first electrode and a second electrode, the first electrodes of the first resistor elements being electrically connected to the second electrode of the transistor element; one or more external resistance terminals to which the second electrodes of the plurality of first resistor elements are physically connected; a first external terminal electrically connected to the first electrode of the transistor element; and an external control terminal electrically connected to the control electrode. The one or more external resistance terminals, the first external terminal, and the external control terminal are external connection terminals provided on a surface of the semiconductor device.

A four-terminal-pair AC quantum resistance dissemination bridge and related methods are provided. The bridge includes: a supply transformer IVD1, a Kelvin branch A1, a Wagner branch A0, the first and second current sources A2, A3, an injection inductive voltage divider A4, a ratio transformer IVD2, the first and second four-terminal AC resistor connection points Z1, Z2, chokes H, and null indicators D. An isolated inductive winding LO is wound along the ratio transformer IVD2 and supplies excitation current to primary winding of injection inductive voltage divider A4 to avoid the mutual influence among various balance networks and rapid balance of the bridge can be realized. By changing turn ratio of primary winding L3 and secondary winding L4 of the second inductive voltage divider T2, the phase shift can be realized through only one set of capacitors for imaginary part error compensation, the bridge with multiple frequency points can be obtained.

A four-terminal-pair AC quantum resistance dissemination bridge and related methods are provided. The bridge includes: a supply transformer IVD1, a Kelvin branch A1, a Wagner branch A0, the first and second current sources A2, A3, an injection inductive voltage divider A4, a ratio transformer IVD2, the first and second four-terminal AC resistor connection points Z1, Z2, chokes H, and null indicators D. An isolated inductive winding LO is wound along the ratio transformer IVD2 and supplies excitation current to primary winding of injection inductive voltage divider A4 to avoid the mutual influence among various balance networks and rapid balance of the bridge can be realized. By changing turn ratio of primary winding L3 and secondary winding L4 of the second inductive voltage divider T2, the phase shift can be realized through only one set of capacitors for imaginary part error compensation, the bridge with multiple frequency points can be obtained.

An apparatus may include a sense resistor comprising a plurality of parallel-coupled resistor elements, a plurality of positive voltage sense points, and a plurality of negative voltage sense points. A first passive combination network may be configured to combine the plurality of positive voltage sense points into a single positive sense terminal and a second passive combination network may be configured to combine the plurality of negative voltage sense points into a single negative sense terminal. The first passive combination network and the second passive combination network may be arranged such that a sense voltage is measurable between the single positive sense terminal and the single negative sense terminal and a dependence of the sense voltage on a variation in current density in the parallel-coupled resistor elements is minimized.