A strain gauge includes a flexible substrate; and resistors each formed of a Cr composite film. The resistors include a first resistor and a second resistor that are formed on one side of the substrate, and include a third resistor and a fourth resistor that are formed on another side of the substrate. The first resistor, the second resistor, the third resistor, and the fourth resistor constitute a Wheatstone bridge circuit.

A surface mount component can include a first substrate and a second substrate arranged adjacent the first substrate to form a monolithic body. At least one of the first substrate or the second substrate can include a thermally conductive material that is electrically insulating. A thin film component can be arranged between the first substrate and the second substrate. A first terminal can be formed over a first end of the monolithic body. A second terminal can be formed over a second end of the monolithic body that is opposite the first end. A heat sink terminal can contact the thermally conductive material of the at least one of the first substrate or the second substrate.

The resistive material contains copper and manganese, an oxide film of manganese being formed on a surface of the resistive material.

To provide a thick film resistor paste for a resistor having no abnormalities of cracks in appearance and sufficient surge resistance, especially for low resistance, while using lead borosilicate glass, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises a ruthenium-oxide-containing glass powder and an organic vehicle, the ruthenium-oxide-containing glass powder comprises 10 to 60 mass % of ruthenium oxide, a glass composition of the ruthenium-oxide-containing glass powder comprises 60 mass % or less of silicon oxide, 30 to 90 mass % of lead oxide, 5 to 50 mass % of boron oxide relative to 100 mass % of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass % is 50 mass % or more relative to 100 mass % of the glass components.

The laminated alumina board for an electronic device includes an alumina board that is made of a sintered body of alumina particles and has an unevenness structure that is formed of the alumina particles on a surface and a flattening film that is provided on an upper surface of the alumina board and contains alumina as a main component.

A resistor device has a resistor body, a first electrode assembly and a second electrode assembly. The resistor body has a resistor layer. The first electrode assembly has two first electrodes symmetrically distributed on both sides of the resistor layer, wherein the first electrodes are electrically connected to the resistor layer. The second electrode assembly has two second electrodes symmetrically distributed on both sides of the resistor layer, wherein the second electrodes are electrically connected to the resistor layer, and positions which the first electrode and the second electrode located on the same side of the resistor layer are connected to the resistor layer have an equipotential. The resistor device does not generate voltage drop through voltammetry detection, improves the accuracy of resistance value precision measurement of the voltammetry detection, and thus can be applied to precision circuits that have high requirements on resistance value precision.

A method of forming a resistor circuit, the method comprising forming a first resistor comprising a first type of resistor, forming a second resistor comprising a second type of resistor, the first type of resistor being different from the second type of resistor and simultaneously doping a first part of the first resistor and a second part of the second resistor, the first resistor and the second resistor being configured such that doping of the first part of the first resistor and the second part of the second resistor defines a temperature coefficient of the first resistor and a temperature coefficient of the second resistor, wherein the temperature coefficient of the first resistor and the temperature coefficient of the second resistor have opposite signs.

A chip resistor includes an insulated substrate having a rectangular parallelepiped shape, a first front electrode and a second front electrode created on both longitudinal ends of the insulated substrate, and a resistive element making a connection between the first and second front electrodes. The resistive element is formed in a meandering shape with a first region and a second region continuing in series via a jointing section between a pair of connecting portions. Moreover, in the first region, a first trimming groove for rough adjustment is formed to elongate a current path of the resistive element. In the second region, a second trimming groove is formed for fine adjustment extending in a direction angled with respect to a straight line along a direction in which the first trimming groove extends.

A chip ceramic semiconductor electronic component includes a ceramic body including a ceramic semiconductor, and a first surface and a second surface in contact with the first surface, the first outer electrode on the first surface of the ceramic body, and the second outer electrode covering the first outer electrode and extending onto the second surface of the ceramic body, in which an area of a first surface of the first outer electrode is less than about 0.17 mm.sup.2, and a hard particle made of a material harder than the first outer electrode is at the interface between the first and second outer electrodes.

A method for fabricating a micro resistance layer and a method for fabricating a micro resistor are provided. The method for fabricating a micro resistance layer includes: providing a substrate; forming a first resistance layer on the substrate by using a screen printing process or a sputtering process; dividing the first resistance layer into second resistance layers, wherein each one of the product regions includes a second resistance layer, and an area of each one of the product regions is smaller than 0.4*0.2 mm.sup.2; and trimming the second resistance layer of each one of the product regions according to a predetermined resistance value to enable the pattern of each one of the second resistance layers to correspond to the predetermined resistance value. The method for fabricating a micro resistor uses the method for fabricating a micro resistance layer for fabrication of the micro resistor.