A film stack made from compacted green films and capable of being sintered to form a ceramic component with monolithic multi-layer structure is disclosed. The film stack includes a functional layer comprising a green film comprising a functional ceramic and a tension layer comprising a green film comprising a dielectric material. The tension layer is directly adjacent to the functional layer in the multi-layer structure. The multilayer structure also includes a first metallization plane and second metallization plane. The functional layer is between the first metallization plane and the second metallization plane.

A method of forming an electronic device is described which comprises a stack of electronic components wherein each electronic component comprises a face and external terminations. A component stability structure is attached to at least one face. A circuit board is provided wherein the circuit board comprises circuit traces arranged for electrical engagement with the external terminations. The component stability structure mechanically engages with the circuit board and inhibits the electronic device from moving relative to the circuit board.

A composite electronic component includes: a body part including a dielectric portion; first and second external electrodes disposed on outer surfaces of the body part; a plurality of first and second electrodes disposed inside of the dielectric portion, and electrically connected to the first and second external electrodes, respectively; third and fourth electrodes disposed on an upper portion of the dielectric portion, and electrically connected to the first and second external electrodes, respectively; a gap provided between the third and fourth electrodes; a groove disposed below the gap; and an electrostatic discharge (ESD) layer disposed in the gap.

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure and a temperature sensitive component. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The first electrode, the second electrode and the gate structure are disposed on the second nitride semiconductor layer. The temperature sensitive component is disposed external to a region between the gate structure and the first electrode along a first direction in parallel to an interface of the first nitride semiconductor layer and the second nitride semiconductor layer.

A temperature sensor includes: a thermistor; a pair of lead-out wires each having a front end connected to the thermistor; a glass body for sealing the thermistor and the front ends of the lead-out wires; a pair of leadwires each having a front end connected to the rear end of each of the pair of lead-out wires; and a synthetic resin covering layer for covering the glass body, the pair of lead-out wires excepting the front end portions, and the front end portions of the pair of lead wires. The covering layer shaped as a tube is arranged by: elastically expanding a laminate of a tubular inner layer and a tubular outer layer so as to be fitted forcibly onto the glass body, the pair of lead-out wires excepting the front end portions, and the front end portions of the pair of lead wires; and applying heat to melt the inner layer and to shrink the outer layer. The peripheral surface of the glass body is brought into a direct contact with the outer layer without the inner layer interposed.

A vibration actuator includes a vibrator including an elastic body and an electro-mechanical energy conversion element; a contact body provided so as to be brought into contact with the vibrator; a flexible printed board configured to feed power to the electro-mechanical energy conversion element; and a temperature detection unit provided on a region of the flexible printed board, in which the flexible printed board and the electro-mechanical conversion element overlap each other.

A composite electronic component includes a body having first and second external electrodes disposed on outer surfaces thereof and including a dielectric body; first and second electrodes disposed in the dielectric body and electrically connected to the first and second external electrodes, respectively; a third electrode disposed on the body and electrically connected to the first external electrode; an electrostatic discharge (ESD) layer disposed on the third electrode; and a fourth electrode disposed on the ESD discharge layer and electrically connected to the second external electrode.

In an electronic component, an outer electrode includes a sintered layer containing a sintered metal, an insulation layer containing an electric insulation material, and a Sn-containing layer containing Sn. The sintered layer extends from each of end surfaces of an element assembly onto at least one main surface thereof so as to cover each of the end surfaces of the element assembly. The insulation layer is directly provided on the sintered layer at each of the end surfaces of the element assembly so as to extend in a direction perpendicular or substantially perpendicular to a side surface of the element assembly, and defines a portion of a surface of the outer electrode. The Sn-containing layer covers the sintered layer except for a portion of the sintered layer that is covered by the insulation layer, and constitutes another portion of the surface of the outer electrode.

In an electronic component, an outer electrode includes a sintered layer including a sintered metal, a reinforcement layer not containing Sn but including Cu or Ni, an insulation layer, and a Sn-containing layer. The sintered layer extends from each end surface of an element assembly onto at least one main surface thereof to cover each end surface of the element assembly. The reinforcement layer extends on the sintered layer and covers the sintered layer entirely. The insulation layer is directly provided on the reinforcement layer at each end surface of the element assembly, extends in a direction perpendicular or substantially perpendicular to a side surface of the element assembly, and defines a portion of a surface of the outer electrode. The Sn-containing layer covers the reinforcement layer except for a portion of the reinforcement layer that is covered by the insulation layer, and defines another portion of the surface of the outer electrode.

A manufacturing method for a temperature sensor includes a disposing step and a fixing step. The disposing step includes disposing a thermistor element so that a distal end portion of a first lead wire extends along a first side surface and passes by the first side surface, and a distal end portion of a second lead wire extends along a second side surface. The fixing step includes electrically connecting and fixing the first lead wire to a first outer electrode, and electrically connecting and fixing the second lead wire to a second outer electrode, in a state in which a first corner and a second corner are respectively supported by the first lead wire and the second lead wire.