Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Ti.sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

The temperature sensor is provided with a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion is provided with an insulating film; a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material; a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on the thin film thermistor portion; and a pair of pattern electrodes connected to the pair of interdigitated electrodes and formed as patterns on the surface of the insulating film. The pair of lead frames is extended and adhered to the surface of the insulating film disposing the thin film thermistor portion therebetween and is connected to the pair of pattern electrodes.

The temperature sensor is provided with a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion is provided with an insulating film; a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material; a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on the thin film thermistor portion; and a pair of pattern electrodes connected to the pair of interdigitated electrodes and formed as patterns on the surface of the insulating film. The pair of lead frames is extended and adhered to the surface of the insulating film disposing the thin film thermistor portion therebetween and is connected to the pair of pattern electrodes.

Provided is a thermistor sintered body which stably provides a desired B constant even if a composition deviation of an additive element has occurred. The thermistor sintered body-includes a Y.sub.2O.sub.3 phase and a YMnO.sub.3 phase, wherein a chemical composition of Cr, Mn, Ca and Y excluding oxygen includes Cr: 3 mol % or less (while including 0%), Mn: 5 to 18 mol %, Ca: 1 to 18 mol %, and Sr: 1 to 25 mol %, with the balance being unavoidable impurities and Y. In the thermistor sintered body, Ca and Sr may be dissolved in the YMnO.sub.3 phase.

Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: V.sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using a V—Al alloy sputtering target.

Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: V.sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using a V—Al alloy sputtering target.

A ceramic electronic component includes a ceramic body, baked external electrodes, and plated external electrodes, and glass layers derived from a glass material included in a conductive paste of the baked external electrodes, are provided at interfaces between the baked external electrodes and the ceramic body, such that the glass layers extend from the interfaces between the ceramic body and the baked external electrodes to a surface of the ceramic body that does not contain the baked external electrodes.

According to some aspects of the present disclosure, a temperature sensor assembly includes a thermistor including a first lead and a second lead, and a nonconductive separator defining at least two channels, with the first lead positioned in a first one of the channels and the second lead positioned in a second one of the channels to electrically isolate the first lead from the second lead. The assembly also includes a cable including a first conductor wire and a second conductor wire, with the first conductor wire coupled to the first lead and the second conductor wire coupled to the second lead, and a tube at least partially enclosing the thermistor, the nonconductive separator, and at least a portion of the cable. Methods for connecting thermistors to cables are also disclosed.

According to some aspects of the present disclosure, a temperature sensor assembly includes a thermistor including a first lead and a second lead, and a nonconductive separator defining at least two channels, with the first lead positioned in a first one of the channels and the second lead positioned in a second one of the channels to electrically isolate the first lead from the second lead. The assembly also includes a cable including a first conductor wire and a second conductor wire, with the first conductor wire coupled to the first lead and the second conductor wire coupled to the second lead, and a tube at least partially enclosing the thermistor, the nonconductive separator, and at least a portion of the cable. Methods for connecting thermistors to cables are also disclosed.

A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.