A resistor material including a plurality of crystalline phases having a positive temperature coefficient of resistance, and an amorphous phase having a negative temperature coefficient of resistance and having a resistivity higher than the crystalline phase, in a mixed state, is provided. Moreover, a resistor element having a resistor film configured by the resistor material described above, and a method of manufacturing a resistor element by forming a film of an amorphous material having a negative temperature coefficient of resistance and subjecting this film to an annealing treatment to obtain the resistor element described above, are provided.

A resistor material including a plurality of crystalline phases having a positive temperature coefficient of resistance, and an amorphous phase having a negative temperature coefficient of resistance and having a resistivity higher than the crystalline phase, in a mixed state, is provided. Moreover, a resistor element having a resistor film configured by the resistor material described above, and a method of manufacturing a resistor element by forming a film of an amorphous material having a negative temperature coefficient of resistance and subjecting this film to an annealing treatment to obtain the resistor element described above, are provided.

A current detection device (30) includes a resistance element (5), and a pair of electrodes (6, 7). The current detection device (30) has a projecting portion (11). The projecting portion (11) has a portion of the resistance element (5) and portions of the pair of electrodes (6, 7). The electrodes (6, 7) have first wall portions (66b, 67b) forming a portion of the projecting portion (11), and second wall portions (66a, 67a) forming the portion of the projecting portion (11). The electrodes (6, 7) have detection areas (66, 67) demarcated by the first wall portion (66b, 67b), the second wall portion (66a, 67a), a leading end portion (66c, 67c), and a contact surface (6a, 7a). The electrodes (6, 7) have voltage detecting portions (20, 21). The voltage detecting portions (20, 21) are arranged in the detection areas (66, 67) with a gap between the leading end portions (66c, 67c).

A method of forming a resistor circuit, the method comprising forming a first resistor comprising a first type of resistor, forming a second resistor comprising a second type of resistor, the first type of resistor being different from the second type of resistor and simultaneously doping a first part of the first resistor and a second part of the second resistor, the first resistor and the second resistor being configured such that doping of the first part of the first resistor and the second part of the second resistor defines a temperature coefficient of the first resistor and a temperature coefficient of the second resistor, wherein the temperature coefficient of the first resistor and the temperature coefficient of the second resistor have opposite signs.

A resistor assembly including at least two connector elements and at least one strip-like or plate-like resistor element arranged between the connector elements. The resistor element has an upper side, a lower side and two longitudinal sides parallel to each other. The at least one resistor element is of a material of which the electrical conductivity is lower than the electrical conductivity of the material of the connector elements. The resistor element has, on at least its upper side or at least its lower side, at least one shaped element as a positioning aid.

Provided is a copper-manganese-nickel based alloy having characteristics (in particular, specific resistance) close to those of a nickel-chromium based alloy. It is also an objective to provide an alloy having high processability compared to a nickel-chromium based alloy. An alloy for a resistive body includes copper, manganese, and nickel, wherein the manganese is 33 to 38% by mass, and the nickel is 8 to 15% by mass.

A semiconductor resistance device includes a polysilicon resistance region; a first contact region in the resistance region, the first contact region having the same conductivity type as the resistance region and having a higher impurity concentration than the resistance region; a first wiring electrically connected to one end of the resistance region via a plurality of first vias; and a second wiring electrically connected to the other end of the resistance region via a plurality of second vias. At least one of the plurality of first vias and the plurality of second vias is in contact with the first contact region so as to form a low resistance contact structure, and at least another one of the plurality of first vias and the plurality of second vias forms a high resistance contact structure that has a contact resistance higher than a contact resistance of the low resistance contact structure.

A semiconductor resistance device includes a polysilicon resistance region; a first contact region in the resistance region, the first contact region having the same conductivity type as the resistance region and having a higher impurity concentration than the resistance region; a first wiring electrically connected to one end of the resistance region via a plurality of first vias; and a second wiring electrically connected to the other end of the resistance region via a plurality of second vias. At least one of the plurality of first vias and the plurality of second vias is in contact with the first contact region so as to form a low resistance contact structure, and at least another one of the plurality of first vias and the plurality of second vias forms a high resistance contact structure that has a contact resistance higher than a contact resistance of the low resistance contact structure.

A chip resistor includes a substrate, two top electrodes, a resistor element, two back electrodes, and two side electrodes. The substrate has a top surface, a back surface and two side surface. The top and back surfaces face away in the thickness direction of the substrate. The side surfaces, spaced apart in a predetermined direction orthogonal to the thickness direction, are connected to the top and back surfaces. The top electrodes, spaced apart in the predetermined direction, are in contact with the top surface. The resistor element, disposed on the top surface, is connected to the top electrodes. The back electrodes, spaced apart in the predetermined direction, are in contact with the back surface. The side electrodes, held in contact with the side surfaces, are connected to the top and back electrodes. Each back electrode has a first and a second layer. The first layer is in contact with the back surface. The second layer, covering a part of the first layer, is made of a material containing metal particles and synthetic resin.

A resistor includes a resistive element, a first resin substrate on an upper surface of the resistive element and having a high thermal conductivity, a first heat radiator plate made of metal provided on an upper surface of the first resin substrate, a second heat radiator plate made of metal provided on the upper surface of the first resin substrate, a first edge-surface electrode provided on the first edge surface of the resistive element and connected to the first heat radiator plate, and a second edge-surface electrode provided on the second edge surface of the resistive element and connected to the second heat radiator plate.