A resistor includes a resistive element, a first resin substrate on an upper surface of the resistive element and having a high thermal conductivity, a first heat radiator plate made of metal provided on an upper surface of the first resin substrate, a second heat radiator plate made of metal provided on the upper surface of the first resin substrate, a first edge-surface electrode provided on the first edge surface of the resistive element and connected to the first heat radiator plate, and a second edge-surface electrode provided on the second edge surface of the resistive element and connected to the second heat radiator plate.

A shunt resistor (1) includes: a resistance element (3); a first electrode (5A) and a second electrode (5B) coupled to both sides of the resistance element (3); a first fusion material (6A) and a second fusion material (6B) electrically coupled to the first electrode (5A) and the second electrode (5B), respectively, the first fusion material (5A) and the second fusion material (5B) haying electric conductivity; and at least one board (10) coupled to the first electrode (5A) and the second electrode 15B) by the first fusion material (6A) and the second fusion material (6B). The first fusion material (6A) is arranged in a first through-hole (7A) formed in the first electrode (5A) or the board (10), and the second fusion material (6B) is arranged it as second through-hole (7B) formed in the second electrode (5B) or the board (10).

The present invention relates to a shunt resistor and a method for manufacturing the shunt resistor. The present invention relates to a current detection device including a shunt resistor. The shunt resistor (1) comprises a resistance element (5) and a pair of electrodes (6, 7) connected to both ends (5a, 5b) of the resistance element (5) in a first direction. The shunt resistor (1) has a projecting portion (11) formed on a side surface (1a), which is parallel to the first direction, of the shunt resistor (1), and a recessed portion (12) formed in a side surface (1b), which is an opposite side of the side surface (1a), of the shunt resistor (1), and extending in the same direction as the projection (11). The projecting portion (11) has a portion of the resistance element (5) and portions of the pair of electrodes (6, 7), and the recessed portion (12) has a side surface (5d) of the resistance element (5) parallel to the first direction.

The present invention relates to a shunt resistor and a method for manufacturing the shunt resistor. The present invention relates to a current detection device including a shunt resistor. The shunt resistor (1) comprises a resistance element (5) and a pair of electrodes (6, 7) connected to both ends (5a, 5b) of the resistance element (5) in a first direction. The shunt resistor (1) has a projecting portion (11) formed on a side surface (1a), which is parallel to the first direction, of the shunt resistor (1), and a recessed portion (12) formed in a side surface (1b), which is an opposite side of the side surface (1a), of the shunt resistor (1), and extending in the same direction as the projection (11). The projecting portion (11) has a portion of the resistance element (5) and portions of the pair of electrodes (6, 7), and the recessed portion (12) has a side surface (5d) of the resistance element (5) parallel to the first direction.

An integrated circuit includes a thin film resistor body that is formed over a dielectric layer. An interfacial layer is formed on the thin film resistor body and resistor heads are formed on the interfacial layer. The thin film resistor body includes nickel chromium aluminum (NiCrAl) and the resistor heads include titanium tungsten (TiW).

An integrated circuit includes a thin film resistor body that is formed over a dielectric layer. An interfacial layer is formed on the thin film resistor body and resistor heads are formed on the interfacial layer. The thin film resistor body includes nickel chromium aluminum (NiCrAl) and the resistor heads include titanium tungsten (TiW).

The present invention discloses a resistor circuit with temperature coefficient compensation, which comprises a first series resistor composed of a first resistor and a second resistor interconnected in series, and a second parallel resistor composed of a third resistor and a fourth resistor interconnected in series, with the first series resistor and the second parallel resistor interconnected in series, wherein the first resistor and the second resistor respectively have a positive and negative temperature coefficient and make the positive and negative temperature coefficients of the first series resistor offset each other, and the third resistor and the fourth resistor respectively have a positive and negative temperature coefficient and make the positive and negative temperature coefficients of the second parallel resistor offset each other.

The present invention discloses a resistor circuit with temperature coefficient compensation, which comprises a first series resistor composed of a first resistor and a second resistor interconnected in series, and a second parallel resistor composed of a third resistor and a fourth resistor interconnected in series, with the first series resistor and the second parallel resistor interconnected in series, wherein the first resistor and the second resistor respectively have a positive and negative temperature coefficient and make the positive and negative temperature coefficients of the first series resistor offset each other, and the third resistor and the fourth resistor respectively have a positive and negative temperature coefficient and make the positive and negative temperature coefficients of the second parallel resistor offset each other.

An integrated circuit that can include a driver having a first driver output, and a first resistance coupled between a first node coupled to the first driver output and a second node. The first resistance can include a process resistor including a first material having a first temperature coefficient, and an interconnect resistor configured to provide at least 20% of the first resistance and including a second material having a second temperature coefficient which changes resistance in an opposite direction with temperature as compared to the first temperature coefficient. A first terminal of the interconnect resistor is directly connected to a first terminal of the process resistor.

An integrated circuit that can include a driver having a first driver output, and a first resistance coupled between a first node coupled to the first driver output and a second node. The first resistance can include a process resistor including a first material having a first temperature coefficient, and an interconnect resistor configured to provide at least 20% of the first resistance and including a second material having a second temperature coefficient which changes resistance in an opposite direction with temperature as compared to the first temperature coefficient. A first terminal of the interconnect resistor is directly connected to a first terminal of the process resistor.