An electrical multilayer component includes a stack composed of functional layers and also a first and a second external contact. The external contacts are arranged on side surfaces of the stack. Internal electrodes of a first type are directly electrically conductively connected to the first external contact and internal electrodes of a second type directly electrically conductively connected to the second external contact. An internal electrode of the first type and an internal electrode of the second type partly overlap. An internal electrode of the first type and an internal electrode of the second type are arranged in a manner spaced apart from one another in an identical plane.

An electrical multilayer component includes a stack composed of functional layers and also a first and a second external contact. The external contacts are arranged on side surfaces of the stack. Internal electrodes of a first type are directly electrically conductively connected to the first external contact and internal electrodes of a second type directly electrically conductively connected to the second external contact. An internal electrode of the first type and an internal electrode of the second type partly overlap. An internal electrode of the first type and an internal electrode of the second type are arranged in a manner spaced apart from one another in an identical plane.

An electronic component includes external electrodes formed on an external surface of a body to be electrically connected to internal electrodes, and containing metal particles and glass, wherein the metal particles include particles having a polyhedral shape.

An electronic component includes external electrodes formed on an external surface of a body to be electrically connected to internal electrodes, and containing metal particles and glass, wherein the metal particles include particles having a polyhedral shape.

A component body is obtained by alternately laminating and sintering a plurality of semiconductor ceramic layers formed of a SrTiO.sub.3-based grain boundary insulated semiconductor ceramic and a plurality of internal electrode layers. The average grain diameter of crystal grains is 1.0 ∝m or less and a coefficient of variation representing variations in a grain diameter of the crystal grains is 30% or less. To prepare the semiconductor ceramic an Sr compound, a Ti compound and a donor compound are weighed in predetermined amounts and mixed/pulverized. A calcined powder is prepared and a dispersant is added with an acceptor compound to the calcined powder. The resulting mixture is wet-mixed and a heat-treated powder is prepared. The heat-treated powder is formed into slurry and subjected to a filter treatment. The filtered slurry is used to prepare a semiconductor ceramic. The resulting laminated semiconductor ceramic capacitor has a varistor function having excellent durability, which can suppress a reduction of insulating properties and ensure desired electrical characteristics even when ESD occurs repeatedly.

A component body is obtained by alternately laminating and sintering a plurality of semiconductor ceramic layers formed of a SrTiO.sub.3-based grain boundary insulated semiconductor ceramic and a plurality of internal electrode layers. The average grain diameter of crystal grains is 1.0 ∝m or less and a coefficient of variation representing variations in a grain diameter of the crystal grains is 30% or less. To prepare the semiconductor ceramic an Sr compound, a Ti compound and a donor compound are weighed in predetermined amounts and mixed/pulverized. A calcined powder is prepared and a dispersant is added with an acceptor compound to the calcined powder. The resulting mixture is wet-mixed and a heat-treated powder is prepared. The heat-treated powder is formed into slurry and subjected to a filter treatment. The filtered slurry is used to prepare a semiconductor ceramic. The resulting laminated semiconductor ceramic capacitor has a varistor function having excellent durability, which can suppress a reduction of insulating properties and ensure desired electrical characteristics even when ESD occurs repeatedly.

A sintered body that includes semiconductor ceramic layers and an internal electrode which are alternately stacked on one another is prepared. A first external electrode is formed on a side surface of the sintered body such that the first external electrode is connected to the internal electrode. An insulating layer is formed on a surface of the sintered body by applying a glass coating over an entire of the sintered body having the formed first external electrode. The insulating layer is exposed from the first external electrode. A second external electrode is formed on the first external electrode. This method provides the produced multilayer electronic component with a stable electric connection between the internal electrodes and the external electrodes.

A sintered body that includes semiconductor ceramic layers and an internal electrode which are alternately stacked on one another is prepared. A first external electrode is formed on a side surface of the sintered body such that the first external electrode is connected to the internal electrode. An insulating layer is formed on a surface of the sintered body by applying a glass coating over an entire of the sintered body having the formed first external electrode. The insulating layer is exposed from the first external electrode. A second external electrode is formed on the first external electrode. This method provides the produced multilayer electronic component with a stable electric connection between the internal electrodes and the external electrodes.

A film stack made from compacted green films and capable of being sintered to form a ceramic component with monolithic multi-layer structure is disclosed. The film stack includes a functional layer comprising a green film comprising a functional ceramic and a tension layer comprising a green film comprising a dielectric material. The tension layer is directly adjacent to the functional layer in the multi-layer structure. The multilayer structure also includes a first metallization plane and second metallization plane. The functional layer is between the first metallization plane and the second metallization plane.

A film stack made from compacted green films and capable of being sintered to form a ceramic component with monolithic multi-layer structure is disclosed. The film stack includes a functional layer comprising a green film comprising a functional ceramic and a tension layer comprising a green film comprising a dielectric material. The tension layer is directly adjacent to the functional layer in the multi-layer structure. The multilayer structure also includes a first metallization plane and second metallization plane. The functional layer is between the first metallization plane and the second metallization plane.