A multilayer varistor has a stack structure including a plurality of layers stacked in a third direction. The multilayer varistor includes a first internal electrode electrically connected to a first external electrode, a second internal electrode electrically connected to the second external electrode, and a third internal electrode electrically connected to the third external electrode. The first internal electrode is disposed between the second internal electrode and the third internal electrode in the third direction.

A semiconductor element includes: a first resistive layer; a second resistive layer provided separately from the first resistive layer and having a resistance value different from that of the first resistive layer; a first external connection electrode electrically connected to one end of the first resistive layer; a second external connection electrode provided separately from the first external connection electrode and electrically connected to one end of the second resistive layer; and a passivation film provided to cover the first and second external connection electrodes and having a first opening and a second opening to which top surfaces of the first and second external connection electrodes are partly exposed, wherein the first opening and the second opening having planar patterns with shapes different from each other.

A stacked varistor having a small variation in electrostatic capacitance is obtained. The stacked varistor includes first internal electrode projection extending from third internal electrode toward first end surface between first side surface and first varistor region, and second internal electrode projection extending from third internal electrode toward second end surface between first side surface and second varistor region . First internal electrode projection extends closer to first end surface than a line connecting point closest to first end surface of first varistor region and point closest to first end surface of third external electrode is. Second internal electrode projection extends closer to second end surface than a line connecting point closest to second end surface of second varistor region and point closest to second end surface of third external electrode is.

A stacked varistor having a small variation in electrostatic capacitance is obtained. The stacked varistor includes first internal electrode projection extending from third internal electrode toward first end surface between first side surface and first varistor region, and second internal electrode projection extending from third internal electrode toward second end surface between first side surface and second varistor region . First internal electrode projection extends closer to first end surface than a line connecting point closest to first end surface of first varistor region and point closest to first end surface of third external electrode is. Second internal electrode projection extends closer to second end surface than a line connecting point closest to second end surface of second varistor region and point closest to second end surface of third external electrode is.

A multilayer varistor includes a sintered body, an internal electrode disposed in the sintered body, a high-resistance layer covering at least part of the sintered body, and an external electrode covering part of the high-resistance layer, the external electrode being electrically connected to the internal electrode. An arithmetic mean roughness of a surface of the high-resistance layer is greater than or equal to 0.06 μm.

It is aimed to provide a laminated varistor capable of reducing stray capacitance to occur between an internal electrode and an external electrode, and also capable of reducing a variation in the stray capacitance due to a variation in the external electrode. A laminated varistor of the present disclosure has external electrodes on first end surface, second end surface, and first side surface of sintered body. No external electrode is provided on second side surface opposite to first side surface. Varistor regions in which internal electrodes overlap each other in a laminating direction are provided at positions closer to second side surface than to first side surface.

It is aimed to provide a laminated varistor capable of reducing stray capacitance to occur between an internal electrode and an external electrode, and also capable of reducing a variation in the stray capacitance due to a variation in the external electrode. A laminated varistor of the present disclosure has external electrodes on first end surface, second end surface, and first side surface of sintered body. No external electrode is provided on second side surface opposite to first side surface. Varistor regions in which internal electrodes overlap each other in a laminating direction are provided at positions closer to second side surface than to first side surface.

A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment the multilayer component includes a ceramic main element being a varistor ceramic and at least one metal structure, wherein the metal structure is cosintered, and wherein the main element is doped with a material of the metal structure in such a way that a diffusion of the material from the metal structure into the main element during a sintering operation is reduced.

A sintered body has a first end face and a second end face opposite to each other in a first direction and a first side face and a second side face opposite to each other in a second direction. A first end face electrode is disposed on the first end face except for end portions of the first end face in the second direction. A second end face electrode is disposed on the second end face except for end portions of the second end face in the second direction. A first side face electrode is disposed on the first side face except for end portions of the first side face in the first direction. A second side face electrode is disposed on the second side face except for end portions of the second side face in the first direction.

A multilayer varistor includes: a sintered compact; an internal electrode provided inside the sintered compact; a high-resistivity layer arranged to cover the sintered compact at least partially and containing element Si; and an external electrode arranged to cover the high-resistivity layer partially, electrically connected to the internal electrode, and containing silver as a main component thereof. A ratio of a total mass of the alkali metals and the alkaline earth metals to a mass of the element Si in a surface region of the high-resistivity layer is equal to or less than 0.6.