The present strain gauge includes a substrate having flexibility; a resistor formed from a material containing at least one of chromium and nickel, on the substrate; and an oxidation impeding layer formed on a non-oxidized surface corresponding to an upper surface of the resistor.

The present strain gauge includes a substrate having flexibility; a resistor formed from a material containing at least one of chromium and nickel, on the substrate; and an oxidation impeding layer formed on a non-oxidized surface corresponding to an upper surface of the resistor.

A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.

A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.

Provided is a pressure-strain sensor including a graphene structure having a three-dimensional porous structure, planar sheets provided on a surface of the graphene structure, and a polymer layer configured to cover the graphene structure and the planar sheets, wherein each of the planar sheets contains a transition metal chalcogenide compound.

A conductive paste composition includes: carbon black having a porous structure and having a DBP oil absorption amount of greater than 240 mL/100 g and a specific surface area of greater than 350 m.sup.2/g; and a liquid silicone rubber base composition, in which in a case where the conductive paste composition is dried and cured at 180 C. for two hours to form a conductive film, a content of the carbon black in the conductive film is 4% by mass or greater and 24% by mass or less, and a surface resistance of the conductive film is 1 k or greater and 9 k or less.

A conductive paste composition includes: carbon black having a porous structure and having a DBP oil absorption amount of greater than 240 mL/100 g and a specific surface area of greater than 350 m.sup.2/g; and a liquid silicone rubber base composition, in which in a case where the conductive paste composition is dried and cured at 180 C. for two hours to form a conductive film, a content of the carbon black in the conductive film is 4% by mass or greater and 24% by mass or less, and a surface resistance of the conductive film is 1 k or greater and 9 k or less.

A method of agglomerating nanoparticles to form larger agglomerates is shown. The nanoparticles are mixed with a resin to form a first mixture (803) of agglomerates, having sizes over a range that includes agglomerates considered to be too large, suspended in the resin. A bead milling cylinder (802) produces a second mixture (808) with fewer large agglomerates. A filter (1001) removes the remaining large agglomerates. The resulting mill base is cut with a solvent before deployment.

A force sensitive resistor includes first and second electrical contacts, and a layer of deformable material impregnated with carbon nanotubes. The layer of deformable material is arranged between the first and second electrical contacts. A difference in the conductivity of the impregnated material caused by deformation of the material is detectable across the contacts. A method of manufacturing a force sensitive resistor includes the steps of providing first and second electrical contacts, and arranging a deformable material impregnated with carbon nanotubes between the first and second electrical contacts. Again, a difference in the conductivity of the impregnated material caused by deformation of the material is detectable across the contacts.

A pressure sensitive electrically conductive composition comprises a contained quantity of magnetite particles, wherein the quantity of magnetite particles includes a distribution of particle sizes between sub-micron and tens of microns, and wherein the magnetite particles have a plurality of planar faces, adjacent planar faces connected at a vertex, the particles each having a plurality of vertices wherein the magnetite particles are irregular in shape and have a low aspect ratio.