A sensor device is disclosed comprising at least one deformable substrate, at least one transducer element formed in or on a surface area of a first side of the deformable substrate, at least one other transducer element formed in or on a surface area of a second side of the deformable substrate, and electrical conductors formed on and/or in the substrate for electrically connecting between and to the transducer elements.

A sensor device is disclosed comprising at least one deformable substrate, at least one transducer element formed in or on a surface area of a first side of the deformable substrate, at least one other transducer element formed in or on a surface area of a second side of the deformable substrate, and electrical conductors formed on and/or in the substrate for electrically connecting between and to the transducer elements.

A pressure sensor includes: a base including an outer surface partially or entirely composed of a curved surface; a plurality of electrodes disposed on the outer surface of the base with spaces therebetween and including at least one signal electrode and at least one ground electrode; and at least one variable resistor made from conductive foam elastomer material and configured to be elastically compressed upon application of pressure and such that electric resistance between the signal electrode and the ground electrode decreases as the amount of the compression increases.

A transient voltage suppression (TVS) device and method of formation. A TVS device may include a first layer, disposed on a first surface of a substrate, comprising a first P+ layer; a second layer, disposed on a second surface of the substrate, opposite the first surface, comprising a second P+ layer; a third layer, disposed between the first P+ layer and the second P+ layer, comprising an N? layer; and an isolation diffusion region, comprising a P structure, connected to the second P+ layer, and extending along a perimeter of the N? layer.

A transient voltage suppression (TVS) device and method of formation. A TVS device may include a first layer, disposed on a first surface of a substrate, comprising a first P+ layer; a second layer, disposed on a second surface of the substrate, opposite the first surface, comprising a second P+ layer; a third layer, disposed between the first P+ layer and the second P+ layer, comprising an N? layer; and an isolation diffusion region, comprising a P structure, connected to the second P+ layer, and extending along a perimeter of the N? layer.

A chip resistor includes: a board having a device formation surface, a back surface opposite from the device formation surface and side surfaces connecting the device formation surface to the back surface, a resistor portion provided on the device formation surface, a first connection electrode and a second connection electrode provided on the device formation surface and electrically connected to the resistor portion, and a resin film covering the device formation surface with the first connection electrode and the second connection electrode being exposed therefrom. Intersection portions of the board along which the back surface intersects the side surfaces each have a rounded shape.

A chip resistor includes: a board having a device formation surface, a back surface opposite from the device formation surface and side surfaces connecting the device formation surface to the back surface, a resistor portion provided on the device formation surface, a first connection electrode and a second connection electrode provided on the device formation surface and electrically connected to the resistor portion, and a resin film covering the device formation surface with the first connection electrode and the second connection electrode being exposed therefrom. Intersection portions of the board along which the back surface intersects the side surfaces each have a rounded shape.

A heater assembly for use in semiconductor processing that includes an application substrate; a heater substrate secured to the application substrate by a thermal bonding process; and a functional layer disposed onto the heater substrate by a layered process. In this heater assembly, the heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer.

A heater assembly for use in semiconductor processing that includes an application substrate; a heater substrate secured to the application substrate by a thermal bonding process; and a functional layer disposed onto the heater substrate by a layered process. In this heater assembly, the heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the functional layer.

A resistor includes a resistive element, a protective film, and a pair of electrodes. The resistive element is made of a metal plate. The protective film is formed on the upper surface of the resistive element. The plated layers are formed to cover the electrodes. The electrodes are separated from each other with the protective film therebetween and are formed at both ends of the upper surface of the resistive element. The electrodes are formed by printing metal-containing paste.