H01C17/06

Connecting conductor
10177506 · 2019-01-08 · ·

A connecting-conductor is disclosed. The connecting-conductor may have a first conductor-element and a second conductor-element. Each conductor-element has a first end that is mechanically-connected and electrically-conductively connected to a resistor-element. The resistor-element has an electrical-insulating substrate, and a resistive material annularly disposed on at least part of the electrical-insulating substrate. The first end of each conductor-element is electrically-conductively connected to the resistive material. The first conductor does not touch the second conductor, and an electrical pathway is created via the resistive material from one of the conductor-elements to the other of the conductor-elements.

Method of forming serpentine resistor

A method of forming a serpentine resistor includes: setting a total length of a schematic resistor to make the schematic resistor to have a first resistance according to a sheet resistance; forming, by using a processor, a serpentine layer corresponding to the schematic resistor, forming, by using the processor, a dummy layer over a portion of the serpentine layer to form a modified serpentine layer, measuring, by using the processor, a modified length of the modified serpentine layer, and comparing, by using the processor, the total length and the modified length to generate a comparison result.

Carbon nanotube thin film laminate resistive heater

Laminated resistive heaters comprising a carbon nanotube layer are described. The invention also includes methods of making laminated resistive heaters and applications using the resistive heaters.

Carbon nanotube thin film laminate resistive heater

Laminated resistive heaters comprising a carbon nanotube layer are described. The invention also includes methods of making laminated resistive heaters and applications using the resistive heaters.

Chip resistor and method for making the same
10102948 · 2018-10-16 · ·

A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.

Chip resistor and method for making the same
10102948 · 2018-10-16 · ·

A chip resistor includes first and second electrodes spaced apart from each other, a resistor element arranged on the first and the second electrodes, a bonding layer provided between the resistor element and the two electrodes, and a plating layer electrically connected to the resistor element. The first electrode includes a flat outer side surface, and the resistor element includes a side surface facing in the direction in which the thirst and the second electrodes are spaced. The outer side surface of the first electrode is flush with the side surface of the resistor element. The plating layer covers at least a part of the outer side surface of the first electrode in a manner such that the covering portion of the plating layer extends from one vertical edge of the outer side surface to the other vertical edge.

METHOD OF FORMING SERPENTINE RESISTOR
20180285509 · 2018-10-04 ·

A method of forming a serpentine resistor includes: setting a total length of a schematic resistor to make the schematic resistor to have a first resistance according to a sheet resistance; forming, by using a processor, a serpentine layer corresponding to the schematic resistor, forming, by using the processor, a dummy layer over a portion of the serpentine layer to form a modified serpentine layer, measuring, by using the processor, a modified length of the modified serpentine layer, and comparing, by using the processor, the total length and the modified length to generate a comparison result.

RESISTOR AND METHOD FOR MANUFACTURING SAME

A resistor includes a resistive element, a protective film, and a pair of electrodes. The resistive element is made of a metal plate. The protective film is formed on the upper surface of the resistive element. The plated layers are formed to cover the electrodes. The electrodes are separated from each other with the protective film therebetween and are formed at both ends of the upper surface of the resistive element. The electrodes are formed by printing metal-containing paste.

RESISTOR AND METHOD FOR MANUFACTURING SAME

A resistor includes a resistive element, a protective film, and a pair of electrodes. The resistive element is made of a metal plate. The protective film is formed on the upper surface of the resistive element. The plated layers are formed to cover the electrodes. The electrodes are separated from each other with the protective film therebetween and are formed at both ends of the upper surface of the resistive element. The electrodes are formed by printing metal-containing paste.

RESISTANCE ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A frequency-dependent resistance element includes an element assembly composed of a sintered magnetic material and a coil conductor embedded in the element assembly. The sintered magnetic material is composed of a primary component containing Fe, Zn, Ni, and Cu and a secondary component containing Co. In the primary component, on a percent by mole basis, the Fe content is 46.79 to 47.69, the Zn content is 12.60 to 24.84, and the Ni content is 19.21 to 32.36 in terms of Fe.sub.2O.sub.3, ZnO, and NiO, respectively. The molar ratio (Ni:Zn) of Ni to Zn is (1X):X, where X is from about 0.28 to about 0.56. The content of Co in terms of Co.sub.3O.sub.4 is 1.0 to 10.0 parts by mass relative to 100 parts by mass of the primary component containing Fe, Zn, Ni, and Cu in terms of Fe.sub.2O.sub.3, ZnO, NiO, and CuO, respectively.