A circuit substrate according to the present disclosure includes a substrate body, a pair of electrodes, a resistor, and a glass layer. The substrate body is made of a ceramic. The pair of electrodes are spaced apart from each other on the substrate body. Each of the resistors is located so as to extend over the pair of electrodes. The glass layer covers the pair of electrodes and the resistor. The resistor contains lanthanum hexaboride. A thickness of the glass layer at an outer peripheral portion of the resistor is greater than the glass layer at a center portion of the resistor.

A circuit and method provide improved trimming of a DCR sensing circuit where a sensing element is sensitive to self-heating or having a large tolerance. The circuit includes a resistive divider circuit coupled to a sensing element. The resistive divider circuit includes a trim resistor and two test points. Prior to trimming the trim resistor, an actual resistance of the sensing element is determined. A target voltage across the trim resistor to be trimmed is calculated according to the determined sensing element resistance and a known small trim current that is to be injected into the circuit during the trimming process. This injected trim current has a low current value so there is no self-heating of the sensing element. Then, the trim resistor is trimmed while injecting this small trim current into the resistive divider circuit and the voltage across the trim resistor is monitored.

A trimmable resistor circuit and a method for operating the trimmable resistor circuit are provided. The trimmable resistor circuit includes first sources/drains and first gate structures alternatively arranged in a first row, second sources/drains and second gate structures alternatively arranged in a second row, third sources/drains and third gate structures alternatively arranged in a third row, first resistors disposed between the first row and the second row, and second resistors disposed between the second row and the third row. In the method for operating the trimmable resistor circuit, the first gate structures in the first row and the third gate structures in the third row are turned on. Then, the second gate structures in the second row are turned on/off according to a predetermined resistance value.

A sulfurization detection resistor makes it possible to detect a degree of sulfurization accurately and easily, and a manufacturing method for such sulfurization detection resistor. A sulfurization detection resistor includes an insulated substrate having a rectangular parallelepiped shape, a first front electrode and a second front electrode formed at both ends on a main surface of the insulated substrate, multiple sulfurization detecting conductors connected in parallel to the first front electrode, multiple resistive elements connected between the sulfurization detecting conductors and the second front electrode, and a protective film formed to partially cover the sulfurization detecting conductors and entirely cover the resistive elements. The sulfurization detecting conductors have their sulfurization detecting portions exposed out of the protective film, and different timings are set for these sulfurization detecting portions respectively to become disconnected depending on a cumulative amount of sulfurization.

A sulfurization detection resistor makes it possible to detect a degree of sulfurization accurately and easily, and a manufacturing method for such sulfurization detection resistor. A sulfurization detection resistor includes an insulated substrate having a rectangular parallelepiped shape, a first front electrode and a second front electrode formed at both ends on a main surface of the insulated substrate, multiple sulfurization detecting conductors connected in parallel to the first front electrode, multiple resistive elements connected between the sulfurization detecting conductors and the second front electrode, and a protective film formed to partially cover the sulfurization detecting conductors and entirely cover the resistive elements. The sulfurization detecting conductors have their sulfurization detecting portions exposed out of the protective film, and different timings are set for these sulfurization detecting portions respectively to become disconnected depending on a cumulative amount of sulfurization.

The present invention provides an amplifier circuit, wherein the amplifier circuit includes an operational amplifier and a feedback path. The operational amplifier has an input terminal and an output terminal, and is arranged for receiving an input signal to generate an output signal. The feedback path is coupled between the input terminal and the output terminal of the operational amplifier, wherein the feedback path comprises at least two poly resistors, and a depletion region of at least one of the two poly resistors is biased by the output signal generated by the operational amplifier.

A resistor manufacturing method includes a first step of applying a solution wherein conductive nanosized particles with a particle diameter of less than 1 m and an insulating material are at least dispersed, or a solution wherein the conductive nanosized particles covered with an insulating material layer are at least dispersed, in a desired form on a substrate surface, thereby forming a film. The resistor manufacturing method also includes a second step of irradiating one portion of the film with light in a predetermined pattern, and sintering the conductive nanosized particles with the light, thereby forming a resistive film that is a conductive particle layer of the predetermined pattern.

A resistor manufacturing method includes a first step of applying a solution wherein conductive nanosized particles with a particle diameter of less than 1 m and an insulating material are at least dispersed, or a solution wherein the conductive nanosized particles covered with an insulating material layer are at least dispersed, in a desired form on a substrate surface, thereby forming a film. The resistor manufacturing method also includes a second step of irradiating one portion of the film with light in a predetermined pattern, and sintering the conductive nanosized particles with the light, thereby forming a resistive film that is a conductive particle layer of the predetermined pattern.

A trimmable resistor circuit and a method for operating the trimmable resistor circuit are provided. The trimmable resistor circuit includes first sources/drains and first gate structures alternatively arranged in a first row, second sources/drains and second gate structures alternatively arranged in a second row, third sources/drains and third gate structures alternatively arranged in a third row, first resistors disposed between the first row and the second row, and second resistors disposed between the second row and the third row. In the method for operating the trimmable resistor circuit, the first gate structures in the first row and the third gate structures in the third row are turned on. Then, the second gate structures in the second row are turned on/off according to a predetermined resistance value.

A trimmable resistor circuit and a method for operating the trimmable resistor circuit are provided. The trimmable resistor circuit includes first sources/drains and first gate structures alternatively arranged in a first row, second sources/drains and second gate structures alternatively arranged in a second row, third sources/drains and third gate structures alternatively arranged in a third row, first resistors disposed between the first row and the second row, and second resistors disposed between the second row and the third row. In the method for operating the trimmable resistor circuit, the first gate structures in the first row and the third gate structures in the third row are turned on. Then, the second gate structures in the second row are turned on/off according to a predetermined resistance value.