The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

A method of fabricating a semiconductor device includes aligning an alignment structure of a wafer to a direction of a magnetic field created by an external electromagnet and depositing a magnetic layer (e.g., NiFe) over the wafer in the presence of the magnetic field and while applying the magnetic field and maintaining a temperature of the wafer below 150° C. An insulation layer (e.g., AlN) is deposited on the first magnetic layer. The alignment structure of the wafer is again aligned to the direction of the magnetic field and a second magnetic layer is deposited on the insulation layer, in the presence of the magnetic field and while maintaining the temperature of the wafer below 150° C.

A process to form devices may include forming a seed layer on and/or over a substrate, modifying a seed layer selectively, forming an image-wise mold layer on and/or over a substrate and/or electrodepositing a first material on and/or over an exposed conductive area. A process may include selectively applying a temporary patterned passivation layer on a conductive substrate, selectively forming an image-wise mold layer on and/or over a substrate, forming a first material on and/or over at least one of the exposed conductive areas and/or removing a temporary patterned passivation layer. A process may include forming a sacrificial image-wise mold layer on a substrate layer, selectively placing one or more first materials in one or more exposed portions of a substrate layer, forming one or more second materials on and/or over a substrate layer and/or removing a portion of a sacrificial image-wise mold layer.

A process to form devices may include forming a seed layer on and/or over a substrate, modifying a seed layer selectively, forming an image-wise mold layer on and/or over a substrate and/or electrodepositing a first material on and/or over an exposed conductive area. A process may include selectively applying a temporary patterned passivation layer on a conductive substrate, selectively forming an image-wise mold layer on and/or over a substrate, forming a first material on and/or over at least one of the exposed conductive areas and/or removing a temporary patterned passivation layer. A process may include forming a sacrificial image-wise mold layer on a substrate layer, selectively placing one or more first materials in one or more exposed portions of a substrate layer, forming one or more second materials on and/or over a substrate layer and/or removing a portion of a sacrificial image-wise mold layer.

The present invention relates to a method of manufacturing a ferrite rod. The method comprises etching cavities into two semiconductor substrates and depositing ferrite layers into the cavities. The semiconductor substrates are attached to each other such that the ferriote layers form a ferrite rod. The present invention employs conventional photolithography and bulk isotropic micromachining of semiconductor wafers to precisely and repeatably form a template or mold, into which magnetic material can be deposited to form a Faraday rotation or phase-shifting element.

The present invention relates to a method of manufacturing a ferrite rod. The method comprises etching cavities into two semiconductor substrates and depositing ferrite layers into the cavities. The semiconductor substrates are attached to each other such that the ferriote layers form a ferrite rod. The present invention employs conventional photolithography and bulk isotropic micromachining of semiconductor wafers to precisely and repeatably form a template or mold, into which magnetic material can be deposited to form a Faraday rotation or phase-shifting element.

An object of the invention is to provide: an MgB.sub.2 superconducting thin-film wire that exhibits excellent J.sub.c characteristics even under a 20 K magnetic field; and a method for producing thereof. The MgB.sub.2 superconducting thin-film wire includes a long substrate and an MgB.sub.2 thin film formed on the long substrate. The MgB.sub.2 thin film has a microtexture such that MgB.sub.2 columnar crystal grains stand densely together on the surface of the long substrate, and has T.sub.c of 30 K or higher. In grain boundary regions of the MgB.sub.2 columnar crystal grains, a predetermined transition metal element is dispersed and segregated. The predetermined transition metal element is an element having a body-centered cubic lattice structure.

An object of the invention is to provide: an MgB.sub.2 superconducting thin-film wire that exhibits excellent J.sub.c characteristics even under a 20 K magnetic field; and a method for producing thereof. The MgB.sub.2 superconducting thin-film wire includes a long substrate and an MgB.sub.2 thin film formed on the long substrate. The MgB.sub.2 thin film has a microtexture such that MgB.sub.2 columnar crystal grains stand densely together on the surface of the long substrate, and has T.sub.c of 30 K or higher. In grain boundary regions of the MgB.sub.2 columnar crystal grains, a predetermined transition metal element is dispersed and segregated. The predetermined transition metal element is an element having a body-centered cubic lattice structure.

A method of fabricating in-plane or out-of-plane thin-film multi-axial magnetic anisotropy devices is provided that includes either depositing a magnetic material with perpendicular or partially perpendicular anisotropy patterned into a multi-directional, curved, or closed path or depositing a thin-film of magnetic material on a piezoelectric material, where the magnetic material is arranged in a pattern, depositing excitation electrodes on the piezoelectric material, where the excitation electrodes are arranged in a pattern, biasing the piezoelectric material, by applying a voltage across the excitation electrodes, where an electric field through the piezoelectric material is generated by the applied voltage across the excitation electrodes, where the piezoelectric material is biased by the electric field to provide stress to the magnetic material, where the stress rotates a magnetization of the magnetic material, and patterning the magnetic material into a multi-directional, curved, or closed path.

A method of fabricating in-plane or out-of-plane thin-film multi-axial magnetic anisotropy devices is provided that includes either depositing a magnetic material with perpendicular or partially perpendicular anisotropy patterned into a multi-directional, curved, or closed path or depositing a thin-film of magnetic material on a piezoelectric material, where the magnetic material is arranged in a pattern, depositing excitation electrodes on the piezoelectric material, where the excitation electrodes are arranged in a pattern, biasing the piezoelectric material, by applying a voltage across the excitation electrodes, where an electric field through the piezoelectric material is generated by the applied voltage across the excitation electrodes, where the piezoelectric material is biased by the electric field to provide stress to the magnetic material, where the stress rotates a magnetization of the magnetic material, and patterning the magnetic material into a multi-directional, curved, or closed path.