Provided are a roll-shaped magnetic field shielding sheet, a method of manufacturing a magnetic field shielding sheet, and an antenna module using the same, which can improve the efficiency of the overall production process by improving a heat treatment process for a thin film magnetic sheet. The magnetic field shielding sheet includes: at least one thin film magnetic sheet; an insulating layer or insulating layers formed on one or either side of the at least one thin film magnetic sheet; and an adhesive layer formed between the insulating layers of the adjacent thin film magnetic sheets to laminate and bond the thin film magnetic sheets, wherein the thin film magnetic sheet is flake-treated to be divided into a plurality of magnetic substance fragments.

A coating solution for forming an insulating film for a grain-oriented electrical steel sheet which contains one or more types of hydrous silicate powders having an average particle size of 2 μm or less, and one or more types of phosphoric acids and phosphates satisfying a relation of Σn.sub.iM.sub.i/ΣP.sub.i≤0.5, and satisfies (Formula 1).
1.5≤(Σn.sub.iM.sub.i+Σn′.sub.jM′.sub.j)/ΣP.sub.i≤15  (Formula 1)
(P represents the number of moles of phosphorus, M represents the number of moles of metal ions derived from the phosphate, n represents the valence of the metal ions derived from the phosphate, i represents the number of types of phosphates, M′ represents the number of moles of metal elements in the hydrous silicate, n′ represents the valence of the metal elements in the hydrous silicate, and j represents the number of types of hydrous silicates).

A coating solution for forming an insulating film for a grain-oriented electrical steel sheet which contains one or more types of hydrous silicate powders having an average particle size of 2 μm or less, and one or more types of phosphoric acids and phosphates satisfying a relation of Σn.sub.iM.sub.i/ΣP.sub.i≤0.5, and satisfies (Formula 1).
1.5≤(Σn.sub.iM.sub.i+Σn′.sub.jM′.sub.j)/ΣP.sub.i≤15  (Formula 1)
(P represents the number of moles of phosphorus, M represents the number of moles of metal ions derived from the phosphate, n represents the valence of the metal ions derived from the phosphate, i represents the number of types of phosphates, M′ represents the number of moles of metal elements in the hydrous silicate, n′ represents the valence of the metal elements in the hydrous silicate, and j represents the number of types of hydrous silicates).

According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.

A magnetoresistive element comprises a nonmagnetic nano-current-channel (NCC) structure provided on a surface of the magnetic recording layer, which is opposite to a surface of the magnetic recording layer where the tunnel barrier layer is provided, and comprising a spatial distribution of perpendicular conducting channels throughout the NCC structure thickness and surrounded by an insulating medium, making the magnetic recording layer a magnetically soft-hard composite structure. Correspondingly, the critical write current and write power are reduced with reversal modes of exchange-spring magnets of the magnetically soft-hard composite structure.

A magnetoresistive element comprises a nonmagnetic nano-current-channel (NCC) structure provided on a surface of the magnetic recording layer, which is opposite to a surface of the magnetic recording layer where the tunnel barrier layer is provided, and comprising a spatial distribution of perpendicular conducting channels throughout the NCC structure thickness and surrounded by an insulating medium, making the magnetic recording layer a magnetically soft-hard composite structure. Correspondingly, the critical write current and write power are reduced with reversal modes of exchange-spring magnets of the magnetically soft-hard composite structure.

A buffer layer can be used to smooth the surface roughness of a galvanic contact layer (e.g., of niobium) in an electronic device, the buffer layer being made of a stack of at least four (e.g., six) layers of a face-centered cubic (FCC) crystal structure material, such as copper, the at least four FCC material layers alternating with at least three layers of a body-centered cubic (BCC) crystal structure material, such as niobium, wherein each of the FCC material layers and BCC material layers is between about five and about ten angstroms thick. The buffer layer can provide the smoothing while still maintaining desirable transport properties of a device in which the buffer layer is used, such as a magnetic Josephson junction, and magnetics of an overlying magnetic layer in the device, thereby permitting for improved magnetic Josephson junctions (MJJs) and thus improved superconducting memory arrays and other devices.

A buffer layer can be used to smooth the surface roughness of a galvanic contact layer (e.g., of niobium) in an electronic device, the buffer layer being made of a stack of at least four (e.g., six) layers of a face-centered cubic (FCC) crystal structure material, such as copper, the at least four FCC material layers alternating with at least three layers of a body-centered cubic (BCC) crystal structure material, such as niobium, wherein each of the FCC material layers and BCC material layers is between about five and about ten angstroms thick. The buffer layer can provide the smoothing while still maintaining desirable transport properties of a device in which the buffer layer is used, such as a magnetic Josephson junction, and magnetics of an overlying magnetic layer in the device, thereby permitting for improved magnetic Josephson junctions (MJJs) and thus improved superconducting memory arrays and other devices.

A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.

A method of manufacturing an MRAM device, the method including forming a first magnetic layer on a substrate; forming a first tunnel barrier layer on the first magnetic layer such that the first tunnel barrier layer includes a first metal oxide, the first metal oxide being formed by oxidizing a first metal layer at a first temperature; forming a second tunnel barrier layer on the first tunnel barrier layer such that the second tunnel barrier layer includes a second metal oxide, the second metal oxide being formed by oxidizing a second metal layer at a second temperature that is greater than the first temperature; and forming a second magnetic layer on the second tunnel barrier layer.