A rare earth thin-film magnet of a Nd—Fe—B film deposited on a Si substrate, wherein, when the film thickness of the rare earth thin film is 70 μm or less, the Nd content satisfies the conditional expression of 0.15≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio; when the film thickness of the rare earth thin film is 70 μm to 115 μm (but excluding 70 μm), the Nd content satisfies the conditional expression of 0.18≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio; and when the film thickness of the rare earth thin film is 115 μm to 160 μm (but excluding 115 μm), the Nd content satisfies the conditional expression of 0.20≦Nd/(Nd+Fe)≦0.25 in terms of an atomic ratio. An object of the present invention is to provide a rare earth thin-film magnet having a maximum film thickness of 160 μm and which is free from film separation and substrate fracture, and a method of producing such a rare earth thin-film magnet by which the thin film can be stably deposited.

A multilayer film includes a substrate; a first magnetic layer disposed on the substrate and a second magnetic layer disposed on the first magnetic layer. The first magnetic layer includes Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20)M.sub.(0-10), wherein M is Si, Ta, Zr, Ti, Co, or a combination thereof. The second magnetic layer includes Fe.sub.(50-90)N.sub.(10-50) or Fe.sub.(60-90)N.sub.(1-10)Ta.sub.(5-30). The multilayer magnetic film has, over a frequency range of 50 MHz to 10 GHz, a magnetic permeability of greater than or equal to 1800 over a selected frequency band in the frequency range; a magnetic loss tangent of less than or equal to 0.3 over a selected frequency band in the frequency range; and a cutoff frequency of greater than or equal to 1 GHz, or greater than or equal to 2 GHz.

A multilayer film includes a substrate; a first magnetic layer disposed on the substrate and a second magnetic layer disposed on the first magnetic layer. The first magnetic layer includes Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20)M.sub.(0-10), wherein M is Si, Ta, Zr, Ti, Co, or a combination thereof. The second magnetic layer includes Fe.sub.(50-90)N.sub.(10-50) or Fe.sub.(60-90)N.sub.(1-10)Ta.sub.(5-30). The multilayer magnetic film has, over a frequency range of 50 MHz to 10 GHz, a magnetic permeability of greater than or equal to 1800 over a selected frequency band in the frequency range; a magnetic loss tangent of less than or equal to 0.3 over a selected frequency band in the frequency range; and a cutoff frequency of greater than or equal to 1 GHz, or greater than or equal to 2 GHz.

Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.

Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.

The present invention relates to a method of manufacturing a ferrite rod. The method comprises etching cavities into two semiconductor substrates and depositing ferrite layers into the cavities. The semiconductor substrates are attached to each other such that the ferriote layers form a ferrite rod. The present invention employs conventional photolithography and bulk isotropic micromachining of semiconductor wafers to precisely and repeatably form a template or mold, into which magnetic material can be deposited to form a Faraday rotation or phase-shifting element.

The present invention relates to a method of manufacturing a ferrite rod. The method comprises etching cavities into two semiconductor substrates and depositing ferrite layers into the cavities. The semiconductor substrates are attached to each other such that the ferriote layers form a ferrite rod. The present invention employs conventional photolithography and bulk isotropic micromachining of semiconductor wafers to precisely and repeatably form a template or mold, into which magnetic material can be deposited to form a Faraday rotation or phase-shifting element.

Some variations provide a magnetically anisotropic structure comprising a hexaferrite film disposed on a substrate, wherein the hexaferrite film contains a plurality of discrete and aligned magnetic hexaferrite particles, wherein the hexaferrite film is characterized by an average film thickness from about 1 micron to about 500 microns, and wherein the hexaferrite film contains less than 2 wt % organic matter. The hexaferrite film does not require a binder. Discrete particles are not sintered or annealed together because the maximum processing temperature to fabricate the structure is 500° C. or less, such as 250° C. or less. The magnetic hexaferrite particles may contain barium hexaferrite (BaFe.sub.12O.sub.19) and/or strontium hexaferrite (SrFe.sub.12O.sub.19). The hexaferrite film may be characterized by a remanence-to-saturation magnetization ratio of at least 0.7. Methods of making and using the magnetically anisotropic structure are also described.

A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.

A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.