A hermetically sealed filtered feedthrough for an active implantable medical device includes a first conductive leadwire extending from a first end to a second end, the first leadwire second end extending outwardly beyond the device side of an insulator hermetically sealed to a ferrule for the feedthrough. A circuit board supporting a chip capacitor is disposed adjacent to a device side of the insulator and has a circuit board passageway. The first leadwire first end resides in the circuit board passageway. A second conductive leadwire on the device side has a second leadwire first end disposed in the circuit board passageway with a second leadwire second end extending outwardly beyond the circuit board to be connectable to AIMD internal electronics. The second leadwire first end is connected to the first leadwire first end and a capacitor internal metallization in the circuit board passageway. The circuit board further comprises a ground electrode plate that is connected to the ground termination of the chip capacitor and to the ferrule.

A hermetically sealed filtered feedthrough for an active implantable medical device includes a first conductive leadwire extending from a first end to a second end, the first leadwire second end extending outwardly beyond the device side of an insulator hermetically sealed to a ferrule for the feedthrough. A circuit board supporting a chip capacitor is disposed adjacent to a device side of the insulator and has a circuit board passageway. The first leadwire first end resides in the circuit board passageway. A second conductive leadwire on the device side has a second leadwire first end disposed in the circuit board passageway with a second leadwire second end extending outwardly beyond the circuit board to be connectable to AIMD internal electronics. The second leadwire first end is connected to the first leadwire first end and a capacitor internal metallization in the circuit board passageway. The circuit board further comprises a ground electrode plate that is connected to the ground termination of the chip capacitor and to the ferrule.

Micro-isolators exhibiting enhanced isolation breakdown voltage are described. The micro-isolators may include an electrically floating ring surrounding one of the isolator elements of the micro-isolator. The isolator elements may be capacitor plates or coils. The electrically floating ring surrounding one of the isolator elements may reduce the electric field at the outer edge of the isolator element, thereby enhancing the isolation breakdown voltage.

Micro-isolators exhibiting enhanced isolation breakdown voltage are described. The micro-isolators may include an electrically floating ring surrounding one of the isolator elements of the micro-isolator. The isolator elements may be capacitor plates or coils. The electrically floating ring surrounding one of the isolator elements may reduce the electric field at the outer edge of the isolator element, thereby enhancing the isolation breakdown voltage.

Various embodiments include a capacitor structure comprising: a plurality of capacitors disposed in a support structure, wherein each of the plurality of capacitors includes a first capacitor electrode and a second capacitor electrode. The support structure includes a first electrode and a second electrode. Each of the plurality of capacitors makes electrical contact with the first electrode via the respective first capacitor electrode and with the second electrode via the respective second capacitor electrode. The support structure includes a mounting side for surface mounting, the mounting side comprising a first contact area of the first electrode and a second contact area of the second electrode. The support structure defines a cuboid interior and the capacitors are disposed in the cuboid interior. An outer side of the support structure defines an additional structural framework outside the mounting side.

Various embodiments include a capacitor structure comprising: a plurality of capacitors disposed in a support structure, wherein each of the plurality of capacitors includes a first capacitor electrode and a second capacitor electrode. The support structure includes a first electrode and a second electrode. Each of the plurality of capacitors makes electrical contact with the first electrode via the respective first capacitor electrode and with the second electrode via the respective second capacitor electrode. The support structure includes a mounting side for surface mounting, the mounting side comprising a first contact area of the first electrode and a second contact area of the second electrode. The support structure defines a cuboid interior and the capacitors are disposed in the cuboid interior. An outer side of the support structure defines an additional structural framework outside the mounting side.

An electronic component includes: an ESD discharge member including a substrate having first and second surfaces opposing each other, first and second through-holes penetrating through the substrate, and first and second conductors; and a multilayer capacitor disposed on the first surface of the substrate, in which the multilayer capacitor may include: a capacitor body; and first and second external electrodes disposed outside the capacitor body and connected to the first and second conductors, respectively, and the first and second conductors may include first and second via electrodes coated on inner walls of the first and second through-holes, respectively.

A vacuum-capacitor-type instrument voltage transformer (1) is equipped with a main capacitor (2) and an insulating tube (3) that accommodates the main capacitor (2). A voltage dividing capacitor (4) is connected to the main capacitor (2) in series. The main capacitor (2) is equipped with a plurality of vacuum capacitors (2a) to (2c) that are connected in series. A high-voltage-side electrode (6) is provided on a high-voltage side of the insulating tube (3), and a ground-side electrode (7) is provided on its low-voltage side. The high-voltage-side electrode (6) is equipped with a high-voltage shield (8). Electrostatic capacity of the vacuum capacitor (for example, the vacuum capacitor (2a)) disposed on the high-voltage side is set to be greater than electrostatic capacity of the vacuum capacitor (for example, the vacuum capacitor (2b)) disposed on the low-voltage side.

An electronic component includes: a multilayer capacitor including a capacitor body and first and second external electrodes respectively disposed on opposing end surfaces of the capacitor body; and an ESD member disposed on a first side surface of the multilayer capacitor perpendicular to a mounting surface of the multilayer capacitor, such that the ESD of the multilayer capacitor may be effectively controlled.

An electronic component includes a capacitor body including a dielectric layer and first and second internal electrodes, and a first to sixth surfaces, the first and the second internal electrodes being exposed through the third and the fourth surfaces, respectively; first and second external electrodes respectively extending from the third and fourth surfaces of the body to a portion of the first surface and respectively connected to the first and second internal electrodes; a shielding layer comprising a cap portion disposed on the second surface of the capacitor body and a side wall portion disposed on the third, fourth, fifth and sixth surfaces of the capacitor body; and an insulating layer disposed between the capacitor body and the shielding layer. A lower portion of the capacitor body is exposed from the insulating layer and the shielding layer.