Novel compositions of vertically oriented graphene nanosheets on aluminum electrodes are provided. These compositions are particularly useful for advanced electrolytic capacitors and fast response electric double layer capacitors. These compositions include a polycrystalline carbon layer, and an adjacent aluminum oxide layer that does not preclude ohmic contact between the carbon layer and an aluminum substrate.

A flexible solar array for extraterrestrial deployment and a method of manufacturing such a flexible solar array are disclosed. A power generating layer, a durable layer, and an ultraviolet radiation blocking layer are disposed such that durable layer is between the power generating layer and the ultraviolet radiation blocking layer.

The invention relates to the rare metal smelting field, and particularly, the present invention relates to a tantalum powder for preparing capacitors and a process for preparing the tantalum powder, and to a sintered anode prepared from the tantalum powder. As to the tantalum powder as provided by the invention, its primary tantalum powder has a BET of from 3.0 to 4.5 m.sup.2/g. After the secondary agglomeration, the tantalum powder has a large particle size. The tantalum powder has an average Fisher sub-sieve size (FSSS) of 1.2 to 3.0 μm wherein as measured with a standard sieve mesh, more than 75% of tantalum powder has a +325-mesh, and a particle size distribution D50 of more than 60 μm, that is, the secondary particle size is high. A resultant capacitor anode prepared by sintering the tantalum powder of the invention at 1200° C. for 20 minutes and then being energized at the voltage of 20 V has the specific capacitance of from 140,000 to 180,000 μFV/g and the residual current of less than 1.0 nA/μFV. Meantime, the invention provides an economical process for making the tantalum powder.

A manufacturing method for a capacitor is provided. The method includes the following steps. A nano carbon material and an electrolyte solution are mixed to obtain an electrolyte composition. A porous substrate is immersed in the electrolyte composition. The electrodes are formed on two opposite surfaces of the porous substrate.

In an embodiment an electrolytic capacitor includes a capacitor element being housed by a can. A covering element is configured to close an opening of the can. A connection element comprises an external terminal for applying an electrical signal and a lead tab being electrically coupled to the capacitor element and to the external terminal. The connection element comprises an upper washer and a lower washer respectively having an opening to receive a rivet to fix the external terminal and the lead tab to the covering element. The upper washer is configured to either comprise a cavity to receive a head of the rivet or a protrusion or a tapered lateral surface.

An electrolytic capacitor includes a capacitor element. The capacitor element includes an anode body, a dielectric layer that covers at least a part of the anode body, a solid electrolyte layer that covers at least a part of the dielectric layer, and a cathode lead-out layer that covers at least a part of the solid electrolyte layer. The cathode lead-out layer includes a carbon layer and a silver-paste layer. The carbon layer is conductive and covers at least a part of the solid electrolyte layer. And the silver-paste layer covers at least a part of the carbon layer. The carbon layer contains carbon particles and silver.

A production method efficiently produces a box sealed type solid electrolytic capacitor in which a capacitor element is accommodated in a box-shaped case. The method includes a step of preparing a bottom wall substrate having bottom walls. A step forms cathode anode circuit patterns on the bottom wall substrate. A step prepares a peripheral side wall substrate having peripheral side walls. A step prepares a peripheral side wall substrate in which a plurality of through-holes are provided that correspond to plurality of bottom wall structural portions. A step fixes a capacitor element to each bottom wall structural portion of the bottom wall substrate. A step obtains a capacitor continuous member in which a plurality of capacitor structural portions structuring a solid electrolytic capacitor by attaching an upper lid substrate on the peripheral side wall substrate. A step obtains a plurality of solid electrolytic capacitors by cutting the capacitor continuous member.

A capacitor and methods of processing an anode metal foil are presented. The capacitor includes a housing, one or more anodes disposed within the housing, one or more cathodes disposed within the housing, one or more separators disposed between an adjacent anode and cathode, and an electrolyte disposed around the one or more anodes, one or more cathodes, and one or more separators within the housing. The one or more anodes each include a metal foil that includes a first plurality of tunnels through a thickness of the metal foil in a first ordered arrangement, the first ordered arrangement being a close packed hexagonal array arrangement, and having a first diameter, and a second plurality of tunnels through the thickness of the metal foil having a second ordered arrangement and a second diameter greater than the first diameter.

The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidized salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidized salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent. A process for producing a semiconductor device comprising a process for doping an organic semiconductor according to the invention is also described. Finally, a high purity p-dopant composition is described.

A method of growing a III-V semiconductor compound film for a semiconductor device including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a III-V compound and forming a layer on the inorganic film on which additional elements from the III-V compound are added, forming a top layer of a tandem solar cell.