The present disclosure generally relates to the combination of MEMS intrinsic technology with specifically designed solid state ESD protection circuits in state of the art solid state technology for RF applications. Using ESD protection in MEMS devices has some level of complexity in the integration which can be seen by some as a disadvantage. However, the net benefits in the level of overall performance for insertion loss, isolation and linearity outweighs the disadvantages.

Electrical overstress protection of microelectromechanical systems (MEMS) are disclosed herein. In certain embodiments, a MEMS radio frequency system includes a MEMS device electrically connected along a radio frequency signal path that handles a radio frequency signal, and an electrical overstress protection circuit in shunt with the radio frequency signal path and operable to protect the MEMS device from an electrical overstress event, such as an electrostatic discharge (ESD) event received on the radio frequency signal path. The electrical overstress protection circuit includes a metal conductor configured to resonate about at a fundamental frequency of the radio frequency signal.

This disclosure relates to ingress-tolerant input devices comprising sliders. Aspects of the disclosure relate to an ingress-tolerant switch assembly for operating an electronic device in an ingress-protected manner. The switch assembly is at least partially disposed on an outer surface of an enclosure of the electronic device and generally includes a spring, a magnet coupled to the spring, and a slider coupled to the magnet. A spring force of the spring is overcome by a user moving the slider relative to the enclosure such that the slider moves the magnet into proximity of the magnetic sensor to cause the magnetic sensor to generate a sensor signal for performing a function of the electronic device.

A MEMS switch that includes a substrate with a first insulating layer and a silicon layer thereabove, a fixed portion and a movable switching portion being formed in the silicon layer.

A first metal layer is situated in recesses in the silicon layer at a side of the silicon layer facing away from the substrate, the first metal layer forming at least one switchable electrical contact between the fixed portion and the switching portion.

A method for manufacturing a MEMS switch including at least one embedded metal contact is also described.

An example microelectromechanical structures (MEMS) switch includes a body having a first end and a second end opposite the first end. The body extends from a base at the first end and has a first width. The MEMS switch further includes a bridge extending laterally from the body at the second end, and a spine extending between the bridge and the base. The spine has a second width smaller than the first width. At least one of the spine or the body includes a first material with a first thermal coefficient and a second material with a second thermal coefficient different from the first thermal coefficient.

A micro-electromechanical system (MEMS) device includes a moveable element within a cavity. The MEMS device also includes a first layer over the cavity, the first layer having a first hole and a second hole. The first hole has a first diameter. The second hole has a second diameter. The second diameter is larger than the first diameter, and the second hole is farther from the moveable element than the first hole. The first hole is sealed with a first dielectric material. The second hole is sealed with a second dielectric material. The cavity filled with a gas at a pressure of at least approximately 10 torr.

A micro or nano electromechanical relay device (10) comprising a source electrode (204) an electrically conductive beam (202) comprising an arcuate portion (12a) coupled to the source electrode by an arm portion, first and second drain electrodes (DE1, DE2) and first and second actuator electrodes (AE1, AE2). The arc of the arcuate portion defines a beam axis (BA). The arcuate portion is mounted for pivotal movement about a pivot axis (PA) which is coaxial or generally coaxial with the beam axis.

According to one embodiment, a MEMS element includes a first member, and an element part. The element part includes a first fixed electrode fixed to the first member, a first movable electrode facing the first fixed electrode, a first conductive member electrically connected to the first movable electrode, and a second conductive member electrically connected to the first movable electrode. The first movable electrode is supported by the first and second conductive members to be separated from the first fixed electrode. The first conductive member has a meandering structure. The second conductive member includes a first conductive region and a second conductive region. The second conductive region is between the first movable electrode and the first conductive region. A second width of the second conductive region along a second direction is less than a first width of the first conductive region along the second direction.

Electrical overstress protection of microelectromechanical systems (MEMS) are disclosed herein. In certain embodiments, a MEMS radio frequency system includes a MEMS device electrically connected along a radio frequency signal path that handles a radio frequency signal, and an electrical overstress protection circuit in shunt with the radio frequency signal path and operable to protect the MEMS device from an electrical overstress event, such as an electrostatic discharge (ESD) event received on the radio frequency signal path. The electrical overstress protection circuit includes a metal conductor configured to resonate about at a fundamental frequency of the radio frequency signal.

The invention provides a hydrogel network comprising a plurality of hydrogel objects, wherein each of said hydrogel objects comprises: a hydrogel body, and an outer layer of amphipathic molecules, on at least part of the surface of the hydrogel body, wherein each of said hydrogel objects contacts another of said hydrogel objects to form an interface between the contacting hydrogel objects. A process for producing the hydrogel networks is also provided. The invention also provides an electrochemical circuit and hydrogel component for mechanical devices comprising a hydrogel network. Various uses of the hydrogel network are also described, including their use in synthetic biology and as components in electrochemical circuits and mechanical devices.