Patent classifications
H01H1/0036
Package-integrated bistable switch for electrostatic discharge (ESD) protection
Embodiments may relate to a package substrate that includes a signal line and a ground line. The package substrate may further include a switch communicatively coupled with the ground line. The switch may have an open position where the switch is communicatively decoupled with the signal line, and a closed position where the switch is communicatively coupled with the signal line. Other embodiments may be described or claimed.
LIQUID METAL MEMS SWITCH
A switch that includes a droplet capable of spreading between two conductors to allow them to be coupled when a voltage is applied. The droplet can be enclosed by a cap that is bonded to a wafer that the droplet is placed upon, and include metallic properties. The cap can create a cavity that may be filled by a fluid, gas, or vapor. The cavity can have multiple conductors that extend partially or fully through it. The droplet can couple the conductors when specific voltages, or frequencies are applied to them. At the specific voltage and frequency, the droplet can spread, allowing at least two conductors to be coupled.
SWITCH AND ELECTRONIC DEVICE INCLUDING THE SAME
A switch in an electronic device includes a substrate, a first signal line, a second signal line, and a ground bridge. The first signal line is on the substrate and extends in a first direction. The second signal line is on the substrate and is spaced apart from the first signal line in a first direction parallel with the first signal line to branch the wireless communication signal at a first point and a second point of the first signal line. The ground bridge is at least partially movable in a space between the first signal line and the second signal line. A first capacitor is between a first point of the first signal line and one end of the second signal line, and a second capacitor is between a second point of the first signal line and the other end of the second signal line.
TWO-STAGE ACTUATION IN MEMS OHMIC RELAYS
A microelectromechanical system (MEMS) switch includes a movable beam suspended over a first set of conductive contacts and a second set of conductive contacts. Actuation of the MEMS switch occurs in two stages. During actuation of the MEMS switch, the movable beam is brought into contact with the first set of conductive contacts in a first stage of actuation. A first conduction path is created when the movable beam contacts the first set of conductive contacts. Continued actuation of the MEMS switch causes the movable beam to contact the second set of conductive contacts in a second stage of actuation. A second conduction path is created when the movable beam contacts the second set of conductive contacts.
Ingress-tolerant input devices comprising sliders
This disclosure relates to ingress-tolerant input devices comprising sliders. Aspects of the disclosure relate to an ingress-tolerant switch assembly for operating an electronic device in an ingress-protected manner. The switch assembly is at least partially disposed on an outer surface of an enclosure of the electronic device and generally includes a spring, a magnet coupled to the spring, and a slider coupled to the magnet. A spring force of the spring is overcome by a user moving the slider relative to the enclosure such that the slider moves the magnet into proximity of the magnetic sensor to cause the magnetic sensor to generate a sensor signal for performing a function of the electronic device.
MEMS DEVICE HAVING DECREASED CONTACT RESISTANCE
A method of manufacturing a MEMS device, wherein the MEMS device has a cavity in which a beam will move to change the capacitance of the device. After most of the device build-up has occurred, sacrificial material is removed to free the beam within the MEMS device cavity. Thereafter, exposed ruthenium contacts are etched back with an etchant comprising chlorine to remove the top surface of both the top and bottom contacts. Due to this etch back process, low contact resistance can be achieved with less susceptibility to stiction events. Stiction performance can be further improved by conditioning the ruthenium contacts in a fluorine based plasma. The fluorine based plasma process, or fluorine treatment, can be performed prior to or after etch-back process of the ruthenium contacts.
Arrangement of MEMS Switches
Various embodiments include an arrangement comprising a plurality of MEMS switches with movable elements. The plurality of MEMS switches are connected to one another in a total-cross-tied configuration.
MEMS RF-switch with near-zero impact landing
The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.
Infrared sensor structure
The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.
MEMS element fuse-like electrical circuit interrupter
According to one embodiment, a MEMS element includes a first member, and an element part. The element part includes a first fixed electrode fixed to the first member, a first movable electrode facing the first fixed electrode, a first conductive member electrically connected to the first movable electrode, and a second conductive member electrically connected to the first movable electrode. The first conductive member and the second conductive member support the first movable electrode to be separated from the first fixed electrode in a first state before a first electrical signal is applied between the second conductive member and the first fixed electrode. The first conductive member and the second conductive member are in a broken state in a second state after the first electrical signal is applied between the second conductive member and the first fixed electrode.